by Navitas | May 8, 2023 | Data Center PR, Front Page, Industrial Motor PR, IR, IR Financial, Latest News, Press Releases, Product Release, Solar PR
5th-gen GeneSiC™ silicon carbide (SiC) diodes deliver high-speed, high-efficiency performance with proprietary ’low-knee’ technology for cool operation Torrance, CA., USA, May 8th, 2023— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Sep 14, 2023 | Front Page, IR, Latest News, Press Releases
In-depth technical papers extend the boundaries of silicon carbide (SiC) next-gen semiconductor performance across EV, data center, solar and appliance/industrial markets. Torrance, CA., USA, September 14th, 2023— Navitas Semiconductor (Nasdaq: NVTS) announced...
by Navitas | Jul 6, 2023 | Front Page, In the Media, Latest News, Short post
In 2022 Navitas Semiconductor acquired GeneSiC Semiconductor, creating the industry’s only pure-play, next-generation power semiconductor company, focused wholly on SiC and GaN. Dr Ranbir Singh, who founded GeneSiC in 2004 and is now Navitas’ Executive Vice-President...
by Navitas | Nov 1, 2022 | Front Page, IR, Latest News, Press Releases
GaNFast™ and GeneSiC™ technologies deliver faster charging, energy savings, and lower system costs than legacy silicon chips Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in gallium nitride (GaN) power ICs and...
by Navitas | Jun 20, 2023 | Front Page, IR, Latest News, Press Releases
Visitors to discover how next-gen GaN and SiC accelerate adoption of EVs and renewable energy, plus enable 2x increased power for AI data centers. Torrance, CA., USA, June 20th, 2023— Navitas Semiconductor (Nasdaq: NVTS), announced its participation in one of Asia’s...
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