by Navitas | Mar 20, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Next-gen power semiconductor leader announces industry milestone in $13B/year potential market covering EV, data center, solar, home appliance, industrial and mobile fast charging Torrance, CA – March 20th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only...
by Navitas | Mar 20, 2023 | Front Page, Latest News, Press Releases
Strategic integration of high-speed, high-voltage gallium nitride (GaN) and low-voltage silicon system-controller chips enables easy-to-use, high-efficiency, fast-charging power systems Torrance, CA – March 20th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only...
by Navitas | Mar 15, 2023 | Front Page, In the Media, IR, Latest News, Press Releases
Partnership for advanced GeneSiC silicon carbide (SiC) targets renewable energy, industrial, medical, transportation, and energy storage Torrance, CA and LaFox, IL – March 15th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Mar 13, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Expansion of technology, markets and geography positions Navitas GaN and SiC to replace legacy silicon chips in $22B/year market opportunity Torrance, CA – March 13th, 2023: Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power...
by Navitas | Mar 8, 2023 | Front Page, In the Media, Latest News, Short post
Another reason why gallium nitride is so reliable inherently stems from its lateral device structure. “We can integrate protection functions monolithically on the chip, which is simply impossible with vertical power devices, i.e., neither silicon nor silicon...
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