by Navitas | Dec 20, 2022 | Short post, Tech Features
During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...
by Navitas | Dec 15, 2022 | Short post, Tech Features
Vivo’s iQOO 10 high-end flagship smartphone is equipped with a new Snapdragon 8+ processor, 4700 mAh dual-cell battery, and supports both 200W ultra-fast charging and 50W wireless charging. iQ00 10 Pro is the first smartphone with a 200W optimized GaN ultra-fast...
by Navitas | Dec 13, 2022 | Short post, Tech Features
GaNSense Half-bridge ICs integrate over-temperature detection and protection (OTP) circuitry to protect the IC against excessively high junction temperatures (TJ). High junction temperatures can occur due to overload, high ambient temperatures, and/or poor thermal...
by Navitas | Dec 12, 2022 | Short post, Tech Features
Lenovo’s Legion 5 and 5 Pro Gen 7 laptops are significant gaming machines, featuring AMD Rembrandt Ryzen 9 or Intel 12th-gen Alder Lake Core CPUs, AMD Radeon Vega or NVIDIA RTX GPUs, 32 GB of DDR5 memory, 1 TB of solid-state drive, up to 16” screens with 240...
by Navitas | Dec 1, 2022 | Short post, Tech Features
The Motorola X30 Pro is Motorola’s flagship smartphone, with the world’s first to feature a 200 MP main camera and sports a Snapdragon 8+ Gen 1 SoC. To support this powerful performance, the X30 Pro features a 4,610 mAhr battery, a 125 W ultra-fast wired charger, and...
by Navitas | Nov 29, 2022 | Short post, Tech Features
During the on-time of each low-side switching cycle (INH = low, INL = high), should the peak current exceed the internal OCP threshold, then the internal low-side gate drive will turn the low-side GaN power FET off quickly and truncate the low-side on-time period to...
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