At the Speed of GaN (gallium nitride)
At the Speed of GaN
Center for Power Electronics Systems
Annual Meeting April 2017
Gene Sheridan, CEO
[email protected]
Linear vs. Switching Regulator Adoption
Power Transistors – 10x Disruptions
The Power of GaN Power ICs
… Unequaled Speed & Efficiency
650V Half-Bridge AllGaN™ Power IC
• Proprietary AllGaN™ technology
• Monolithic integration of 650V eMode GaN FET, driver, logic
• Internal level-shift & bootstrap circuits
• Ground-referenced, digital input
• High dV/dt immunity (200 V/ns)
• Zero inductance turn-off loops
• ESD, UVLO, shoot-through protection
• Flexible topologies: Active Clamp Flyback, Half-Bridge, LLC, etc.
Discrete Half-Bridge Drive – 5 Key Losses
Eliminating Gate Loop Losses
External drivers
• Just 1-2 nH of gate loop inductance can cause unintended turn-on
• Gate resistors reduce spikes but create additional losses
Integrated GaN drivers (iDrive™)
• Eliminate the problem
• Negligible turn-off losses
Eliminating Bootstrap Losses
Eliminating Half-Bridge Losses
Eliminating Footprints and Complexity
High-Frequency Half-Bridge Integration
Half-Bridge GaN Power IC at 2 MHz
Frequency Drives Transformer Size & Cost (65W)
Frequency Drives EMI Filter Size & Cost
Conductive frequency range: 150 kHz – 30 MHz
Magnetics’ Frequencies – 10x Every 10 years
GaN Power ICs enable Hi-Density Adapters
3x Higher Density with 50% Energy Savings
AllGaN: 150W, PFC+LLC, 300 kHz → Over 20W/in3
AllGaN: 150W, PFC+LLC, >1Mhz → 35W/in3
Fast Chargers … going “GaN Fast”
3x Fast Charging with 50% Energy Savings
AllGaN: 45W, ACF, 300kHz → 2-3x Faster Charging
AllGaN: 25W, ACF, >1MHz → 4-5x Faster Charging
Time for Another Disruption…
High-Frequency Resonant Market Adoption
