BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Navitas - ECPv6.16.2//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:Navitas
X-ORIGINAL-URL:https://navitassemi.com
X-WR-CALDESC:Events for Navitas
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:America/Los_Angeles
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20240310T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20241103T090000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20250309T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20251102T090000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20260308T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20261101T090000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20270314T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20271107T090000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;VALUE=DATE:20251203
DTEND;VALUE=DATE:20251204
DTSTAMP:20260525T102626
CREATED:20251118T161625Z
LAST-MODIFIED:20251118T161625Z
UID:987506076-1764720000-1764806399@navitassemi.com
SUMMARY:UBS Global Technology and AI Conference 2025
DESCRIPTION:1-on-1 meetings with Chris Allexandre\, President and CEO\, and Todd Glickman\, CFO
URL:https://navitassemi.com/event/ubs-global-technology-and-ai-conference-2025/
LOCATION:The Phoenician\, 6000 E Camelback Rd\, Scottsdale\, AZ\, AZ 85251\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2025/11/UBS-Logo-Event.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20260114
DTEND;VALUE=DATE:20260115
DTSTAMP:20260525T102626
CREATED:20260108T093325Z
LAST-MODIFIED:20260108T093325Z
UID:987506222-1768348800-1768435199@navitassemi.com
SUMMARY:28th Annual Needham Growth Conference
DESCRIPTION:Fireside Chat: Wednesday\, January 14th at 2:15pm EST\nPresenter: Chris Allexandre\, CEO\n1×1 meetings with attending investors available throughout the day\nWebcast Link: https://wsw.com/webcast/needham148/nvts/2305989
URL:https://navitassemi.com/event/28th-annual-needham-growth-conference/
LOCATION:Lotte New York Palace Hotel\, 455 Madison Ave\, New York\, NY\, NY 10022\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2022/11/Needham-Event.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20260322
DTEND;VALUE=DATE:20260327
DTSTAMP:20260525T102626
CREATED:20260122T201946Z
LAST-MODIFIED:20260320T181704Z
UID:987506235-1774137600-1774569599@navitassemi.com
SUMMARY:APEC 2026 - San Antonio\, TX
DESCRIPTION:Navitas will be exhibiting solutions for AI data center\, performance computing\, grid and energy infrastructure\, and industrial electrification at APEC 2026 from March 22–26\, 2026\, in San Antonio\, Texas. Visit us at booth #2027 to learn more about our SiC and GaN products\, solutions and industry sessions: \nProducts: \n• Ultra-high voltage (UHV)  3300 V and 2300 V press-fit modules with epoxy–resin potting technology\, along with high-voltage 1200 V solutions based on latest Trench Assisted planar (TAP) architecture in SiCPAK™ power modules. A gate driver evaluation board for dynamic characterization of UHV SiCPAK power modules will also be on display. \n• Latest TO-247 (low-height) and QDPAK package solutions\, including 1200 V SiC based technology\, for AI data center power supplies. \n• New bare die products called Known Good Die (KGD) on 3300 V\, 2300 V\, 1700 V and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications. \n• GaNFast™ FETs\, ranging from 0.8mOhms at 100V to 11mOhms at 650 V in industry leading packages. \n• GaNSafe™ ICs for specifically created to serve demanding\, high-power applications\, such as AI data centers\, and industrial electrification. Navitas 4th generation integrates control\, drive\, sensing\, and critical protection features that enable unprecedented reliability and robustness. \n• Bi-directional GaN for single-stage conversion\, enabling the transition from two-stage to single-stage topologies\, to provide the highest efficiency\, power density\, and performance\, while reducing system cost and complexity. \n• A new family of GaNSlim™ Control ICs have been released to further simplify and speed up the development of small form factor\, high-power-density applications by offering the highest level of integration and thermal performance. Target markets include auxiliary PSUs for data centers and high-performance computing. \nAI Data Center Solutions: \n• 800 V–to–6 V Power Delivery Board (PDB)\, debuted at NVIDIA GTC 2026\, designed for next-generation NVIDIA MGX AI data centers. This high-density\, ultra-efficient platform eliminates an entire power conversion stage to reduce system cost and losses while freeing board space for compute\, memory\, and GPUs\, enabling maximum AI workload performance. \n• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V\, NV6066\,in TOLT package and 100 V\, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard for AI datacenters. \n• 12 kW AI data center power supply\, which leverages IntelliWeave™ digital control to achieve unmatched efficiency\, power density\, and performance for OCP PSU.Designed for production\, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers\, enabled by  GaNSafe ICs and GeneSiC™ MOSFETs. \n• World’s first 8.5 kW AI data center OCP PSU\, achieving 98% efficiency  for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs. \n• World’s highest power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs\, which demand 3× more power per rack – enabling the world’s highest power density at 137 W/in³ with over 97% efficiency. \n Industrial Electrification Solutions: \n• 400 W – 1 kW motor drive boards using GaNSense™ Motor Drive ICs\, delivering industry-leading performance\, efficiency\, and robustness for industrial applications. \n• 45W Auxiliary SMPS based on 1.7 kV SiC technology. \n• A 250KW DC-DC converter with an output of 950VDCat 480A\, and can be paralleled to achieve megawatt power capability\, developed by one of our key partners\, Brightloop will also be on display. \nPerformance Computing Solutions: \n• 300 W\, 240 W\, and 140 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers\, significantly reducing weight and thermal management requirements. \nGrid and Energy Solutions:  \n• For solid-state transformers (SST) application requiring high-efficiency power conversion such as over 98 % efficiency from medium voltage grid\, that is\, 13.8 kVAC – 34.5 kVAC to 800 VDC or 1500 VDC targeting AI data centers and grid and energy infrastructure segments. \n• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased. \nIndustry sessions:  \n• March 24 | 8:55–9:20 AM CT\nIS01.2 – Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications\nPresenter: Sumit Jadav\, Navitas Semiconductor \n• March 25 | 11:05–11:30 AM CT\nIS07.6 – High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions\nPresenter: Llew Vaughan-Edmunds\, Vice President & GM\, GaN Business Unit & Bin Li\, Director\, Applications Engineer \n• March 26 | 11:35–11:50 AM CT\nIS27.4 – Single-stage Power Converter Enabled by GaN Bidirectional Switches\nPresenter: Llew Vaughan-Edmunds\, Vice President & GM\, GaN Business Unit & Bin Li\, Director\, Applications Engineer \nExposition hours are: \nMonday\, March 23 (4:45 PM – 7:45 PM) \nTuesday\, March 24 (9:00 AM – 4:30 PM)\, and \nWednesday\, March 25 (9:00 AM – 2:30 PM) \nWe look forward to seeing you at our booth!  If you are interested in scheduling a meeting\, please reach out to your Navitas representative or write to info@navitassemi.com. \n 
URL:https://navitassemi.com/event/apec-2026/
LOCATION:Henry B. Gonzalez Convention Center\, 900 E Market St\, San Antonio\, TX\, TX 78205\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2026/01/APEC-2026-Event-Full-Res.jpg
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BEGIN:VEVENT
DTSTART;VALUE=DATE:20260420
DTEND;VALUE=DATE:20260423
DTSTAMP:20260525T102626
CREATED:20260401T113339Z
LAST-MODIFIED:20260401T113506Z
UID:987506389-1776643200-1776902399@navitassemi.com
SUMMARY:PE International 2026
DESCRIPTION:Power Electronics International 2026 returns for its 4th edition as part of the leading series of senior-level chip level conferences for the global power electronics industry\, bringing together executives\, end users and technology experts for two days of insight\, discussion and collaboration. The conference will focus on four key themes: \n– Putting the Automotive Industry in Pole Position\n– Ensuring a Renewable\, Sustainable Future\n– Delivering AI-driven Data Centre Densification\n– Engineering Innovation with WBG Devices\, Circuits and Materials \nPresentations:\n• April 21 | 1:40 PM CET\nRedefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure\nPresenter: Matteo Uccelli\, Field Application Engineer Manager \n• April 22 | 9:40 AM CET\nHigh-Frequency GaN Power Conversion: Supercharging AI Data-Centre Density\nPresenter: Matteo Uccelli\, Field Application Engineer Manager
URL:https://navitassemi.com/event/pe-international-2026/
LOCATION:Sheraton Brussels Airport Hotel\, Sheraton Brussels Airport Hotel\, Brussels National Airport\, Brussels\, 1930\, Belgium
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2023/06/PE-International-Conference-Event.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20260421
DTEND;VALUE=DATE:20260423
DTSTAMP:20260525T102626
CREATED:20260401T104720Z
LAST-MODIFIED:20260401T104720Z
UID:987506383-1776729600-1776902399@navitassemi.com
SUMMARY:ISIG Executive Summit USA Power 2026
DESCRIPTION:Powering the Future: Advancing Power Electronics Innovation & Adoption for the Electrified Era \nPresentations:\n• April 22 | 8:50–9:10 AM PT\nThe Power Behind AI: Scaling Data Centers for the Future\nPresenter: Llew Vaughan-Edmunds\, Vice President & GM\, GaN Business Unit
URL:https://navitassemi.com/event/isig-executive-summit-usa-power-2026/
LOCATION:Plug and Play Tech Center\, 440 N Wolfe Rd\, Sunnyvale\, CA\, CA 94085\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2026/04/ISIG-2026-Event.jpg
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BEGIN:VEVENT
DTSTART;VALUE=DATE:20260522
DTEND;VALUE=DATE:20260523
DTSTAMP:20260525T102626
CREATED:20260430T112821Z
LAST-MODIFIED:20260508T120445Z
UID:987506613-1779408000-1779494399@navitassemi.com
SUMMARY:2026 World AI Server Power Supply Conference
DESCRIPTION:Presentations:\n• May 22 | 9:40-10:00 AM CST\nHigh-Power GaN ICs Deliver Leading Efficiency and Power Density in AI Data Center DC-DC Brick Solutions\nPresenter: Reyn Zhan\, Marketing Director\, GaN BU
URL:https://navitassemi.com/event/2026-world-ai-server-power-supply-conference/
LOCATION:Kexing International Conference Center\, Unit 4\, Building B\, Kexing Science Park\, No. 15 Keyuan Road\, Nanshan District\, Shenzhen\, China
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2026/04/SPSC-2026-Event.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20260609
DTEND;VALUE=DATE:20260611
DTSTAMP:20260525T102626
CREATED:20260518T112306Z
LAST-MODIFIED:20260518T112506Z
UID:987506730-1780963200-1781135999@navitassemi.com
SUMMARY:PCIM 2026
DESCRIPTION:Navitas will be exhibiting at PCIM Europe 2026 from June 9–11\, 2026\, in Nuremberg\, Germany. \nVisit us at the Nürnberg Messe\, Hall 9\, Booth #544 to learn more about our SiC and GaN products\, solutions\, and industry applications across AI data center\, grid and energy infrastructure\, performance computing\, and industrial electrification. \nProducts:\n• Ultra-high voltage (UHV)  3300 V and 2300 V press-fit modules with epoxy–resin potting technology\, along with high-voltage 1200 V solutions based on the latest Trench Assisted planar (TAP)architecture Silicon Carbide in SiCPAK™ power modules. \n• 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP. \n• New bare die products called Known Good Die (KGD) on 3300 V\, 2300 V\, 1700 V\, and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications. \n• GaNFast™ Gallium Nitride FETs\, starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V in industry leading packages. \n• GaNSafe™ GaN ICs for specifically demanding\, high-power applications\, such as AI data centers\, and industrial electrification. Navitas 4th generation integrates control\, drive\, sensing\, and critical protection features that enable unprecedented reliability and robustness. \n• Bi-directional GaN for single-stage conversion\, enabling the transition from two-stage to single-stage topologies\, to provide the highest efficiency\, power density\, and performance\, while reducing system cost and complexity. \n• GaNSlim™ Control ICs for auxiliary PSUs for data centers and high-performance computing\, based on Navitas GaNFast Gallium Nitride technology\, offering the highest level of integration and thermal performance. \nSolutions: \nGrid and Energy Solutions:\n• For solid-state transformers (SST) application requiring ultra-high-efficiency from medium voltage grid\, that is\, 13.8 kVAC– 34.5 kVACto 800 VDC targeting AI data centers and grid and energy infrastructure segments. \n• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased. \nAI Data Center Solutions:\n• 20 kW 800 V-to-6 V GaN based power delivery board aiming 97.5% peak efficiency\, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency\, reliability\, cost-effectiveness\, and power density.\n \n• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V\, NV6066\,in TOLT package and 100 V\, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification delivering 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard as well. \n• 12 kW AI data center power supply\, which leverages IntelliWeave™ digital control to achieve unmatched efficiency\, power density\, and performance for OCP PSU. Designed for production\, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers\, enabled by GaNSafe ICs and GeneSiC™ MOSFETs. \n• World’s first 8.5 kW AI data center OCP PSU\, achieving 98% efficiency for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs. \n• High power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs\, which demand 3× more power per rack – enabling the high power density at 137 W/in³ with over 97% efficiency. \n Industrial Electrification Solutions:\n• 400 W – 1 kW motor drive boards using GaNSense™\, Navitas GaN technology\, Motor Drive ICs with integrated power stage\,delivering industry-leading performance\, efficiency\, and robustness for industrial applications. \n• 45W Auxiliary SMPS based on 1.7 kV GeneSiC SiC technology. \n• 300 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers\, significantly reducing weight and thermal management requirements. \n• 500W Solar micro inverter based on GaN BDS\, NV6428. \n• GaN Bi-directional switch eval board NVE107C using NV6427 in a half-bridge configuration\, driven by Navitas NV1702 IsoFast gate drivers. \nFeatured Partner Solutions:\n• A 250KW DC-DC converter with an output of 950VDCat 480A\, and can be paralleled to achieve megawatt power capability\, developed by one of our key partners\, Brightloop\, will also be on display. \n• An EPFL-developed full SST cell integrating the primary converter stage\, transformer\, and secondary conversion stage using a novel single-stage topology\, leveraging Navitas 3300 V and 1200 V SiC technology. \n• 50KVA Bi-Directional Active Front End\, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules\, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers. \nPanel and Presentations:\nTuesday\, June 9th | 1:25 -2:25  PM CET \nComponeers Panel Session: Automotive\, AI\, Humanoid Robots – the future of GaN\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Llew Vaughan-Edmunds\, VP & GM\, GaN Business Unit \nWednesday\, June 10 | 11:45 am – 12:45 pm CET\nPower Electronics News Panel Session: The Evolution in Data Center Power Distribution\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Llew Vaughan-Edmunds\, VP & GM\, GaN Business Unit \nWednesday\, June 10th | 2:30 – 3:30 PM CET\nBodo’s Panel Session: “Riding the SiC Wave Efficiently”\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Paul Wheeler\, VP & GM\, High Voltage SiC Business Unit \nThursday\, June 11th | 11:45 AM – 12:45 PM (CET)\nBodo’s Panel Session:  “What’s up\, what’s next for GaN?”\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Llew Vaughan-Edmunds\, VP & GM\, GaN Business Unit \nExposition hours are:\n• Tuesday\, June 9 (9:00 AM – 5:00 PM)\n• Wednesday\, June 10 (9:00 AM – 5:00 PM)\n• Thursday\, June 11 (9:00 AM – 5:00 PM) \n 
URL:https://navitassemi.com/event/pcim-2026/
LOCATION:Nuremberg Exhibition Center\, Nuremberg Exhibition Center\, Nuremberg\, Germany\, Germany
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2026/05/PCIM-2026-Event.jpg
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