APEC 2026 - San Antonio, TX
2026-03-22 - 2026-03-26 | Henry B. Gonzalez Convention Center, 900 E Market St, San Antonio, TX, TX 78205, United States
Navitas will be exhibiting solutions for AI data center, performance computing, grid and energy infrastructure, and industrial electrification at APEC 2026 from March 22–26, 2026, in San Antonio, Texas. Visit us at booth #2027 to learn more about our SiC and GaN products, solutions and industry sessions:
Products:
• Ultra-high voltage (UHV) 3300 V and 2300 V press-fit modules with epoxy–resin potting technology, along with high-voltage 1200 V solutions based on latest Trench Assisted planar (TAP) architecture in SiCPAK™ power modules. A gate driver evaluation board for dynamic characterization of UHV SiCPAK power modules will also be on display.
• Latest TO-247 (low-height) and QDPAK package solutions, including 1200 V SiC based technology, for AI data center power supplies.
• New bare die products called Known Good Die (KGD) on 3300 V, 2300 V, 1700 V and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications.
• GaNFast™ FETs, ranging from 0.8mOhms at 100V to 11mOhms at 650 V in industry leading packages.
• GaNSafe™ ICs for specifically created to serve demanding, high-power applications, such as AI data centers, and industrial electrification. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness.
• Bi-directional GaN for single-stage conversion, enabling the transition from two-stage to single-stage topologies, to provide the highest efficiency, power density, and performance, while reducing system cost and complexity.
• A new family of GaNSlim™ Control ICs have been released to further simplify and speed up the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target markets include auxiliary PSUs for data centers and high-performance computing.
AI Data Center Solutions:
• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V, NV6066,in TOLT package and 100 V, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard for AI datacenters.
• 12 kW AI data center power supply, which leverages IntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance for OCP PSU.Designed for production, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers, enabled by GaNSafe ICs and GeneSiC™ MOSFETs.
• World’s first 8.5 kW AI data center OCP PSU, achieving 98% efficiency for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs.
• World’s highest power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs, which demand 3× more power per rack – enabling the world’s highest power density at 137 W/in³ with over 97% efficiency.
Industrial Electrification Solutions:
• 400 W – 1 kW motor drive boards using GaNSense™ Motor Drive ICs, delivering industry-leading performance, efficiency, and robustness for industrial applications.
• 45W Auxiliary SMPS based on 1.7 kV SiC technology.
• A 250KW DC-DC converter with an output of 950VDCat 480A, and can be paralleled to achieve megawatt power capability, developed by one of our key partners, Brightloop will also be on display.
Performance Computing Solutions:
• 300 W, 240 W, and 140 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers, significantly reducing weight and thermal management requirements.
Grid and Energy Solutions:
• For solid-state transformers (SST) application requiring high-efficiency power conversion such as over 98 % efficiency from medium voltage grid, that is, 13.8 kVAC – 34.5 kVAC to 800 VDC or 1500 VDC targeting AI data centers and grid and energy infrastructure segments.
• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased.
Industry sessions:
• March 24 | 8:55–9:20 AM CT
IS01.2 – Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications
Presenter: Sumit Jadav, Navitas Semiconductor
• March 25 | 11:05–11:30 AM CT
IS07.6 – High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit & Bin Li, Director, Applications Engineer
• March 26 | 11:35–11:50 AM CT
IS27.4 – Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit & Bin Li, Director, Applications Engineer
Exposition hours are:
Monday, March 23 (4:45 PM – 7:45 PM)
Tuesday, March 24 (9:00 AM – 4:30 PM), and
Wednesday, March 25 (9:00 AM – 2:30 PM)
We look forward to seeing you at our booth! If you are interested in scheduling a meeting, please reach out to your Navitas representative or write to info@navitassemi.com.
