Navitas

PE International 2025
2025-04-07 - 2025-04-08 | Sheraton Brussels Airport Hotel, Sheraton Brussels Airport Hotel, Brussels National Airport, Brussels, 1930, Belgium
With soaring sales of silicon devices and explosive growth in SiC and GaN technologies, the industry is filled with optimism. Attendees will enjoy two days of insightful talks and panel discussions, where we will delve into the factors driving this industry boom and address emerging challenges.
Attendees will explore six key themes:
– Next-Generation Semiconductor Materials: Beyond SiC and GaN
– Sustainable Power Conversion Technologies: Eco-Friendly Solutions
– Smart Grid Integration: Enhancing Resilience and Flexibility
– Power Electronics for Electric Mobility: Accelerating Electrification
– Artificial Intelligence in Power Electronics: Optimizing Performance
– Energy Harvesting and Wireless Power Transfer: Enabling Autonomous Systems
Llew Vaughan-Edmunds, Senior Director Product Management to Present:
Navitas GaN and SiC Technologies to Enable Next-Gen AI Power Delivery
April 8 – 11:40 AM – 12:00 PM CET

I.S.E.S. USA Power 2025
2025-04-14 | Plug and Play Tech Center, 440 N Wolfe Rd, Sunnyvale, CA, CA 94085, United States
Empowering a Sustainable Future: Innovation, Collaboration and Navigating Challenges in SiC, GaN, and the Power Electronics Industry

PCIM Europe 2025
2025-05-06 - 2025-05-07 | Nuremberg Exhibition Center, Nuremberg Exhibition Center, Nuremberg, Germany, Germany
The PCIM Expo has been held in Nuremberg every year since 1979 and remains the leading exhibition for power electronics, intelligent motion, renewable energy, and energy management.
Here you will find the full range of the latest, most reliable and proven technologies that will equip you for the future – from new materials and components to intelligent energy converters and system solutions for e-mobility and sustainable energy systems.

Baird 2025 Global Consumer, Technology & Services Conference
2025-06-03 - 2025-06-04 | InterContinental New York Barclay, 111 E 48th St, New York, NY, NY 10017, United States
Baird 2025 Global Consumer, Technology & Services ConferenceJune 3, 2025 Fireside Chat 8:30-9:00 ET; 1-on-1 meetings with Gene Sheridan, CEOLocation: InterContinental Barclay – New York, NYhttps://wsw.com/webcast/baird79/nvts/1971270

Click the PDF below to view the presentation:
Navitas Baird Update 2025

Rosenblatt Securities: Rosenblatt’s 5th Annual Technology Summit (Part I)
2025-06-11 04:00 - 16:45 (America/Los_Angeles)
Rosenblatt 5th Annual Technology Summit: The Age of AI
June 11, 2025 Fireside Chat 10:00-10:45 ET
1-on-1 meetings with Gene Sheridan, CEO, and Todd Glickman, CFO
Location: Virtual
View here: https://wsw.com/webcast/rblt4/nvts/1788696

Needham 6th Annual Virtual Semiconductor & Semicap 1×1 Conference
2025-08-20 | Virtual
The 6th Annual Needham Virtual Semiconductor & SemiCap 1×1 Conference will take place on August 20-21, 2025. Company participants will include some of the most prominent C-level management teams in the Semiconductor and Semiconductor Capital Equipment ecosystems. This event consists of virtual 1×1 and group meetings.
1-on-1 meetings with Gene Sheridan, CEO, and Todd Glickman

Evercore 2025 Semiconductor, IT Hardware & Networking Conference
2025-08-26 | Peninsula Hotel, 108 E Superior St, Chicago, IL, IL 60611, United States
August 26, 2025, 1-on-1 meetings with Gene Sheridan, CEO, and Todd Glickman, CFO

Deutsche Bank 2025 Technology Conference
2025-08-27 | Waldorf Astoria Dana Point, 1 Monarch Beach Resort N., Dana Point, CA, CA 92629, United States
Senior executives from leading companies in the technology industry will provide updates to you on their businesses. The format will be focused on more one-on-one / small group meetings in order to connect corporate management teams and investors. Presentations and panel discussions will also be an agenda highlight.
August 28, 2025, 1-on-1 meetings with Gene Sheridan, CEO, and Todd Glickman, CFO

SEMI-e 2025
2025-09-10 - 2025-09-11 | Shenzhen World Exhibition & Convention Center, 福海街道展城路1号 邮政编码, Shenzhen, Baoan, 518103, China
Shenzhen International Semiconductor & IC Exhibition (SEMI-e 2025), a premier global event in the semiconductor industry, will bring together more than 1,000 distinguished global exhibitors to showcase the entire industry chain. Spanning from EDA tools, semiconductor materials, equipment manufacturing to chip design and advanced packaging applications. The exhibition features seven dedicated theme pavilions, including Chip Design and Application, IC Fabrication, Wafer Equipment, Advanced Packaging Equipment, Semiconductor Core Part & Raw Material, Compound Semiconductors & Power Devices, AI Computing Power.

Asia Charging Expo (Fall) 2025
2025-09-12 | Qianhai International Convention Center, Qianhai Enterprise Mansion, 63 Qianwan Road, Qianhai Cooperation Zone, Shenzhen, China
The Asia Charging Expo (ACE), is one of the world’s most influential energy electronics technology exhibitions and one of the leading charging industry technology events in Asia. Thanks to its strong professionalism and targeted reach of exhibitors and visitors, the Asia Charging Expo enjoys considerable global recognition. It has become a platform for major global power supply companies to release product information and showcase their latest technologies.

ICSCRM 2025
2025-09-14 - 2025-09-18 | Bexco (Busan Exhibition & Convention Center), 55 APEC-ro, Haeundae-gu, Busan, 48060, Korea, Republic of
ICSCRM 2025 promises an exceptional program, comprising top-tier tutorials, keynote lectures, and an array of oral and poster presentations, all backed by the Technical Program Committee. In addition to the technical program, an exhibition showcasing the latest technologies and products in the field of silicon carbide and related materials will run concurrently.
Event Details:
Booth:
#092
Presentations:
Sid Sundaresan – Session Chair
“Devices Physics, Design, and Characterization”
September 16th 2:45pm – 4:15pm KST
Arash Salemi
“Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications”
September 17th 4:30pm – 6:30pm KST

electronica India 2025
2025-09-17 - 2025-09-18 | Bangalore International Exhibition Centre (BIEC), 10th Mile, Tumkur Main Road , Madavara Post Dasanapura, Hobli, Bengaluru, Karnataka, 562123, India
electronica India gathers international and local market leaders from the industry, displays products, addresses all important target groups and thus creates the best communication and business environment for both sides.
Event Details:
Navitas x JPE Booth:
Hall 5, #D21

ECCE Conference 2025
2025-10-19 - 2025-10-22 | Philadelphia, Philadelphia, PA, United States
The ECCE 2025 Conference will feature both industry-driven and application-oriented technical sessions, as well as expositions. ECCE will bring together practicing engineers, researchers and other professionals for interactive and multidisciplinary discussions on the latest advances in various areas related to energy conversion.

ASME InterPACK 2025
2025-10-28 - 2025-10-29 | Hotel FERA Anaheim, 100 The City Dr S, Orange, CA, CA 92868, United States
InterPACK is the premier international conference for exchange of state-of-the-art knowledge in research, development, manufacturing, and applications of electronics packaging and heterogeneous integration.
Presentations:
Jinesh Narangaparambil
“Long-Term-Reliability Analysis of Top Cooled GaN Package Under Thermal Cycling”
October 28th 11:15 am – 12:45 pm PDT

PowerAmerica Technical Webinar
2025-11-05 | Virtual
Technical Webinar – Dr. Arash Salemi
This event is free and does not require registration. Please feel free to share the link with colleagues and students.
Where: Online via Zoom
When: Wednesday, November 5, from Noon to 1 p.m. (EDT)
Topic: 3300 V & 2300 V SiC Trench-Assisted Planar MOSFETs and Compact Power Modules with Epoxy-Resin Potting Technology for Energy Infrastructure Applications

Wide Bandgap Power Devices and Applications (WiPDA 2025)
2025-11-10 - 2025-11-11 | Fayetteville, Fayetteville, AR, United States
WiPDA provides a forum for device scientists, circuit designers, and application engineers to share technology updates, research findings, experience, and potential applications. WiPDA 2025 will feature technical sessions, tutorials, keynotes from industry and research leaders, as well as an exposition.
Presentations:
Sid Sundaresan & Jaehoon Park
“Industry View on the status and challenges for UHV SiC Power Device Technologies”
November 11th 8:50 AM – 9:20 AM CST

ECPE Hybrid Workshop 2025
2025-11-12 | Lyon, Lyon, France
ECPE, the European Center for Power Electronics e.V., founded in 2003, is the leading industry-driven research network in the field of power electronics in Europe, with more than 230 member organizations, including member companies and competence centers.
Presentations:
Dr. Arash Salemi
“Revolutionizing Ultra-High-Voltage Power SiC MOSFETs from 650V to 15kV”
November 12th 12:45 PM – 1:15 PM CET

Bodo’s Wide Bandgap Event 2025
2025-12-02 | Hilton Munich Airport, Terminalstraße Mitte 20, 85356 München-Flughafen, Germany
Presentations:
Llew Vaughan-Edmunds
“Bodo’s WBG – Opening Roundtable”
December 2nd 4:00 PM ~ 5:30 PM CET
Llew Vaughan-Edmunds
“High-Power GaN ICs & FETs Enable Efficiency and Power Density Requirements in Next Gen 800V AI Data Centers”
December 3rd 11:45 AM – 12:00 PM CET
Sascha Dern
“Performance and Reliability Gains in MVHV SiC Using Advanced Power Devices and Packaging Technologies”
December 3rd 2:30 PM – 2:45 PM CET

UBS Global Technology and AI Conference 2025
2025-12-03 | The Phoenician, 6000 E Camelback Rd, Scottsdale, AZ, AZ 85251, United States
1-on-1 meetings with Chris Allexandre, President and CEO, and Todd Glickman, CFO

28th Annual Needham Growth Conference
2026-01-14 | Lotte New York Palace Hotel, 455 Madison Ave, New York, NY, NY 10022, United States
Fireside Chat: Wednesday, January 14th at 2:15pm EST
Presenter: Chris Allexandre, CEO
1×1 meetings with attending investors available throughout the day
Webcast Link: https://wsw.com/webcast/needham148/nvts/2305989

APEC 2026 - San Antonio, TX
2026-03-22 - 2026-03-26 | Henry B. Gonzalez Convention Center, 900 E Market St, San Antonio, TX, TX 78205, United States
Navitas will be exhibiting solutions for AI data center, performance computing, grid and energy infrastructure, and industrial electrification at APEC 2026 from March 22–26, 2026, in San Antonio, Texas. Visit us at booth #2027 to learn more about our SiC and GaN products, solutions and industry sessions:
Products:
• Ultra-high voltage (UHV) 3300 V and 2300 V press-fit modules with epoxy–resin potting technology, along with high-voltage 1200 V solutions based on latest Trench Assisted planar (TAP) architecture in SiCPAK™ power modules. A gate driver evaluation board for dynamic characterization of UHV SiCPAK power modules will also be on display.
• Latest TO-247 (low-height) and QDPAK package solutions, including 1200 V SiC based technology, for AI data center power supplies.
• New bare die products called Known Good Die (KGD) on 3300 V, 2300 V, 1700 V and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications.
• GaNFast™ FETs, ranging from 0.8mOhms at 100V to 11mOhms at 650 V in industry leading packages.
• GaNSafe™ ICs for specifically created to serve demanding, high-power applications, such as AI data centers, and industrial electrification. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness.
• Bi-directional GaN for single-stage conversion, enabling the transition from two-stage to single-stage topologies, to provide the highest efficiency, power density, and performance, while reducing system cost and complexity.
• A new family of GaNSlim™ Control ICs have been released to further simplify and speed up the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target markets include auxiliary PSUs for data centers and high-performance computing.
AI Data Center Solutions:
• 800 V–to–6 V Power Delivery Board (PDB), debuted at NVIDIA GTC 2026, designed for next-generation NVIDIA MGX AI data centers. This high-density, ultra-efficient platform eliminates an entire power conversion stage to reduce system cost and losses while freeing board space for compute, memory, and GPUs, enabling maximum AI workload performance.
• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V, NV6066,in TOLT package and 100 V, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard for AI datacenters.
• 12 kW AI data center power supply, which leverages IntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance for OCP PSU.Designed for production, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers, enabled by GaNSafe ICs and GeneSiC™ MOSFETs.
• World’s first 8.5 kW AI data center OCP PSU, achieving 98% efficiency for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs.
• World’s highest power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs, which demand 3× more power per rack – enabling the world’s highest power density at 137 W/in³ with over 97% efficiency.
Industrial Electrification Solutions:
• 400 W – 1 kW motor drive boards using GaNSense™ Motor Drive ICs, delivering industry-leading performance, efficiency, and robustness for industrial applications.
• 45W Auxiliary SMPS based on 1.7 kV SiC technology.
• A 250KW DC-DC converter with an output of 950VDCat 480A, and can be paralleled to achieve megawatt power capability, developed by one of our key partners, Brightloop will also be on display.
Performance Computing Solutions:
• 300 W, 240 W, and 140 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers, significantly reducing weight and thermal management requirements.
Grid and Energy Solutions:
• For solid-state transformers (SST) application requiring high-efficiency power conversion such as over 98 % efficiency from medium voltage grid, that is, 13.8 kVAC – 34.5 kVAC to 800 VDC or 1500 VDC targeting AI data centers and grid and energy infrastructure segments.
• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased.
Industry sessions:
• March 24 | 8:55–9:20 AM CT
IS01.2 – Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications
Presenter: Sumit Jadav, Navitas Semiconductor
• March 25 | 11:05–11:30 AM CT
IS07.6 – High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit & Bin Li, Director, Applications Engineer
• March 26 | 11:35–11:50 AM CT
IS27.4 – Single-stage Power Converter Enabled by GaN Bidirectional Switches
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit & Bin Li, Director, Applications Engineer
Exposition hours are:
Monday, March 23 (4:45 PM – 7:45 PM)
Tuesday, March 24 (9:00 AM – 4:30 PM), and
Wednesday, March 25 (9:00 AM – 2:30 PM)
We look forward to seeing you at our booth! If you are interested in scheduling a meeting, please reach out to your Navitas representative or write to info@navitassemi.com.

PE International 2026
2026-04-20 - 2026-04-22 | Sheraton Brussels Airport Hotel, Sheraton Brussels Airport Hotel, Brussels National Airport, Brussels, 1930, Belgium
Power Electronics International 2026 returns for its 4th edition as part of the leading series of senior-level chip level conferences for the global power electronics industry, bringing together executives, end users and technology experts for two days of insight, discussion and collaboration. The conference will focus on four key themes:
– Putting the Automotive Industry in Pole Position
– Ensuring a Renewable, Sustainable Future
– Delivering AI-driven Data Centre Densification
– Engineering Innovation with WBG Devices, Circuits and Materials
Presentations:
• April 21 | 1:40 PM CET
Redefining Data Center Power: GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure
Presenter: Matteo Uccelli, Field Application Engineer Manager
• April 22 | 9:40 AM CET
High-Frequency GaN Power Conversion: Supercharging AI Data-Centre Density
Presenter: Matteo Uccelli, Field Application Engineer Manager

ISIG Executive Summit USA Power 2026
2026-04-21 - 2026-04-22 | Plug and Play Tech Center, 440 N Wolfe Rd, Sunnyvale, CA, CA 94085, United States
Powering the Future: Advancing Power Electronics Innovation & Adoption for the Electrified Era
Presentations:
• April 22 | 8:50–9:10 AM PT
The Power Behind AI: Scaling Data Centers for the Future
Presenter: Llew Vaughan-Edmunds, Vice President & GM, GaN Business Unit

2026 World AI Server Power Supply Conference
2026-05-22 | Kexing International Conference Center, Unit 4, Building B, Kexing Science Park, No. 15 Keyuan Road, Nanshan District, Shenzhen, China
Presentations:
• May 22 | 9:40-10:00 AM CST
High-Power GaN ICs Deliver Leading Efficiency and Power Density in AI Data Center DC-DC Brick Solutions
Presenter: Reyn Zhan, Marketing Director, GaN BU

PCIM 2026
2026-06-09 - 2026-06-10 | Nuremberg Exhibition Center, Nuremberg Exhibition Center, Nuremberg, Germany, Germany
Navitas will be exhibiting at PCIM Europe 2026 from June 9–11, 2026, in Nuremberg, Germany.
Visit us at the Nürnberg Messe, Hall 9, Booth #544 to learn more about our SiC and GaN products, solutions, and industry applications across AI data center, grid and energy infrastructure, performance computing, and industrial electrification.
Products:
• Ultra-high voltage (UHV) 3300 V and 2300 V press-fit modules with epoxy–resin potting technology, along with high-voltage 1200 V solutions based on the latest Trench Assisted planar (TAP)architecture Silicon Carbide in SiCPAK™ power modules.
• 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP.
• New bare die products called Known Good Die (KGD) on 3300 V, 2300 V, 1700 V, and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications.
• GaNFast™ Gallium Nitride FETs, starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V in industry leading packages.
• GaNSafe™ GaN ICs for specifically demanding, high-power applications, such as AI data centers, and industrial electrification. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness.
• Bi-directional GaN for single-stage conversion, enabling the transition from two-stage to single-stage topologies, to provide the highest efficiency, power density, and performance, while reducing system cost and complexity.
• GaNSlim™ Control ICs for auxiliary PSUs for data centers and high-performance computing, based on Navitas GaNFast Gallium Nitride technology, offering the highest level of integration and thermal performance.
Solutions:
Grid and Energy Solutions:
• For solid-state transformers (SST) application requiring ultra-high-efficiency from medium voltage grid, that is, 13.8 kVAC– 34.5 kVACto 800 VDC targeting AI data centers and grid and energy infrastructure segments.
• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased.
AI Data Center Solutions:
• 20 kW 800 V-to-6 V GaN based power delivery board aiming 97.5% peak efficiency, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency, reliability, cost-effectiveness, and power density.

• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V, NV6066,in TOLT package and 100 V, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification delivering 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard as well.
• 12 kW AI data center power supply, which leverages IntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance for OCP PSU. Designed for production, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers, enabled by GaNSafe ICs and GeneSiC™ MOSFETs.
• World’s first 8.5 kW AI data center OCP PSU, achieving 98% efficiency for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs.
• High power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs, which demand 3× more power per rack – enabling the high power density at 137 W/in³ with over 97% efficiency.
Industrial Electrification Solutions:
• 400 W – 1 kW motor drive boards using GaNSense™, Navitas GaN technology, Motor Drive ICs with integrated power stage,delivering industry-leading performance, efficiency, and robustness for industrial applications.
• 45W Auxiliary SMPS based on 1.7 kV GeneSiC SiC technology.
• 300 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers, significantly reducing weight and thermal management requirements.
• 500W Solar micro inverter based on GaN BDS, NV6428.
• GaN Bi-directional switch eval board NVE107C using NV6427 in a half-bridge configuration, driven by Navitas NV1702 IsoFast gate drivers.
Featured Partner Solutions:
• A 250KW DC-DC converter with an output of 950VDCat 480A, and can be paralleled to achieve megawatt power capability, developed by one of our key partners, Brightloop, will also be on display.
• An EPFL-developed full SST cell integrating the primary converter stage, transformer, and secondary conversion stage using a novel single-stage topology, leveraging Navitas 3300 V and 1200 V SiC technology.
• 50KVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers.
Panel and Presentations:
Tuesday, June 9th | 1:25 -2:25 PM CET
Componeers Panel Session: Automotive, AI, Humanoid Robots – the future of GaN
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit
Wednesday, June 10 | 11:45 am – 12:45 pm CET
Power Electronics News Panel Session: The Evolution in Data Center Power Distribution
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit
Wednesday, June 10th | 2:30 – 3:30 PM CET
Bodo’s Panel Session: “Riding the SiC Wave Efficiently”
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Paul Wheeler, VP & GM, High Voltage SiC Business Unit
Thursday, June 11th | 11:45 AM – 12:45 PM (CET)
Bodo’s Panel Session: “What’s up, what’s next for GaN?”
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit
Exposition hours are:
• Tuesday, June 9 (9:00 AM – 5:00 PM)
• Wednesday, June 10 (9:00 AM – 5:00 PM)
• Thursday, June 11 (9:00 AM – 5:00 PM)
