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DTSTART;VALUE=DATE:20230906
DTEND;VALUE=DATE:20230908
DTSTAMP:20230907T095432Z
CREATED:20230719T132225Z
LAST-MODIFIED:20230907T095432Z
UID:987500460-1693958400-1694131199@navitassemi.com
SUMMARY:SEMICON Taiwan 2023 Power and Opto Semiconductor Forum
DESCRIPTION:SEMICON Taiwan 2023 will hold its grand exhibition at Taipei Nangang Exhibition Center Halls 1 & 2\, from September 6th to September 8th. \nWith the key focus of “Inspire Innovation. Empower Sustainability.”\, the exhibition will gather more participants from major companies than ever before\, including 850 exhibitors\, covering 3\,000 booths\, and attracting over 50\,000 visitors! \nAt the worldwide launch event at the Marriot Taipei\, Navitas’ David Carroll\, Sr. VP Worldwide Sales\, and Charles Bailley\, Sr. Director Business Development will introduce Navitas and the new GaNSafe platform to an invited VIP audience of over 50 high-ranking customer attendees\, plus industry partners and international media. \nClick the PDF below to view our presentation on the launch of GaNSafe™.
URL:https://navitassemi.com/event/semicon-taiwan-2023-power-and-opto-semiconductor-forum/
LOCATION:TaiNEX\, TaiNEX 1&2\, Taipei\, Nangang District\, 115\, Taiwan
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2022/06/Semicon-Taiwan-Event.jpg
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BEGIN:VEVENT
DTSTART;VALUE=DATE:20230913
DTEND;VALUE=DATE:20230915
DTSTAMP:20230829T155617Z
CREATED:20230829T155617Z
LAST-MODIFIED:20230829T155617Z
UID:987500636-1694563200-1694735999@navitassemi.com
SUMMARY:electronica India 2023
DESCRIPTION:electronica India is South Asia’s leading trade fair for electronic components\, systems\, applications and solutions. \nFind Navitas Semiconductor at the JPE Booth EE 15\, Hall No.5\, where Nicola Franco will be presenting: “Discover leading-edge GaNFastTM ICs and GeneSiCTM FET from 650 V to 6\,500 V and revolutionize your power designs\, from 30 W mobile ultra-fast chargers to 6.6 kW bi-directional EV OBCs.”
URL:https://navitassemi.com/event/electronica-india-2023/
LOCATION:Bangalore International Exhibition Centre (BIEC)\, 10th Mile\, Tumkur Main Road \, Madavara Post Dasanapura\, Hobli\, Bengaluru\, Karnataka\, 562123\, India
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2022/07/Electronica-India-Event.jpg
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BEGIN:VEVENT
DTSTART;VALUE=DATE:20230913
DTEND;VALUE=DATE:20230915
DTSTAMP:20230829T155951Z
CREATED:20230829T155951Z
LAST-MODIFIED:20230829T155951Z
UID:987500639-1694563200-1694735999@navitassemi.com
SUMMARY:electronica India 2023
DESCRIPTION:electronica India is South Asia’s leading trade fair for electronic components\, systems\, applications and solutions. \nFind Navitas Semiconductor at the JPE Booth EE 15\, Hall No.5\, where Nicola Franco will be presenting: “Discover leading-edge GaNFastTM ICs and GeneSiCTM FET from 650 V to 6\,500 V and revolutionize your power designs\, from 30 W mobile ultra-fast chargers to 6.6 kW bi-directional EV OBCs.”
URL:https://navitassemi.com/event/electronica-india-2023/
LOCATION:Bangalore International Exhibition Centre (BIEC)\, 10th Mile\, Tumkur Main Road \, Madavara Post Dasanapura\, Hobli\, Bengaluru\, Karnataka\, 562123\, India
CATEGORIES:Event-CN
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2023/08/admin-ajax.jpg
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BEGIN:VEVENT
DTSTART;VALUE=DATE:20230917
DTEND;VALUE=DATE:20230922
DTSTAMP:20230823T171916Z
CREATED:20230823T101825Z
LAST-MODIFIED:20230823T171916Z
UID:987500600-1694908800-1695340799@navitassemi.com
SUMMARY:ICSCRM2023
DESCRIPTION:“Navitas Semiconductor at ICSCRM 2023”:  \nPaper: “New Generation SiC MPS Diodes with Low Schottky Barrier Height”\nAditi Agarwal\, Siddarth Sundaresan\, Jaehoon Park\, Vamsi Mulpuri\, Kailun Zhong\nMonday\, September 18th\, 19:10\nIntroducing the latest 650V SiC MPS diodes\, featuring an ultra-low Schottky barrier height while maintaining extremely low reverse-leakage currents\, high avalanche-robustness\, and impressive surge currents. The performance metrics of these diodes are compared with other commercial 650V diode parts. \nPaper: “650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS(ON) of 1.92 mΩ-cm²”\nJaehoon Park\, Siddarth Sundaresan\, Aditi Agarwal\, Vamsi Mulpuri\, Nathaniel Walsh and Steven Smith\nMonday\, September 18th\, 19:40\nThe paper delves into the development of a new generation of SiC planar-gate power MOSFETs\, designed to offer remarkably tight VTH distribution and low RDS(on). These advancements are critical for SiC power modules in electric vehicle traction applications\, ensuring consistent and efficient performance. \nNavitas’ Senior Vice President of SiC Technology & Operations\, Sid Sundaresan\, will chair session “Devices 4: Short circuit\, avalanche and reliability\,” with focus on crucial topics in the field of SiC technology (Thursday\, September 21st\, from 11:00 to 12:30).\nNavitas Semiconductor invites all attendees to view the presentations and engage in discussions with their experts. Navitas’ participation at ICSCRM underscores commitment to driving innovation in SiC technology and reinforcing their position as a global leader in the field.
URL:https://navitassemi.com/event/icscrm2023/
LOCATION:Hilton Sorrento Palace\, Via Rivolo S.Antonio\, 13\, Sorrento\, 80067\, Italy
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2023/08/ICSCRM2023-Event.jpg
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