In The Media
Navitas New Distribution Deal with Richardson Electronics Expands Americas Footprint for Next-Gen SiC Semiconductors
Partnership for advanced GeneSiC silicon carbide (SiC) targets renewable energy, industrial, medical, transportation, and energy storage Torrance, CA and LaFox, IL – March 15th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
elektroniknet: New Applications for Gallium Nitride, Stepping Out of the Consumer Niche
Another reason why gallium nitride is so reliable inherently stems from its lateral device structure. "We can integrate protection functions monolithically on the chip, which is simply impossible with vertical power devices, i.e., neither silicon nor silicon carbide,"...
Power Electronics News: SiC-Based Solar Inverter for Renewables Industry
"Navitas Semiconductor and KATEK Group have announced that KATEK’s coolcept fleX series of Steca solar inverters have embraced new GeneSiC power semiconductors for enhanced efficiency, size, weight and cost, as well as considerable market expansion. Through the...
PSD: Navitas to Acquire Silicon Control IC Company
"Navitas Semiconductor announced an agreement to acquire the remaining minority interest in its silicon control IC joint venture from Halo Microelectronics for a purchase price of $20 million in Navitas stock." In 2021, Navitas and Halo created a joint venture to...
EETimes Asia: Planet Navitas Showcases Tomorrow’s Sustainable World at CES 2023
"At CES 2023, Navitas Semiconductor invited CES attendees to discover how next-generation gallium nitride (GaN) and silicon carbide (SiC) technologies are playing a vital role in delivering global sustainability by enabling fully-electrified housing, transportation...
EDN – The diverging worlds of SiC and GaN semiconductors
"Gallium nitride (GaN) and silicon carbide (SiC) semiconductors are now in mass production and rapidly gaining market share. According to market research firm Yole, by the end of 2027, GaN and SiC devices will capture 30% of the power semiconductors market, replacing...
EDN: Navitas’ design journey in the GaN semiconductor realm
Just a few years ago, people asked when GaN would happen. And now, when GaN is already here, it’s probably a bit late to join the GaN party. Navitas is one of the few GaN device specialists that are now part of this power electronics market disruption. The year 2023...
Navitas: “Electrify Our World™” at 25th Annual Needham Growth Conference, New York
Leading-edge gallium nitride (GaN) and silicon carbide (SiC) technologies rapidly taking share from legacy silicon chips in $22B/yr market opportunity Torrance, CA – January 9th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
PSD: GaNFast Power ICs maximize transient voltage ratings and boost circuit ruggedness
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
Bodo’s Power Systems: Fully-Protected Half-Bridge Power ICs Enable Motor-Integrated Inverters
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
PSD: GaN Drives Development of Next-Generation EVs
"The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...
Compound Semiconductor: A GaN device for all markets
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
EE Times Green Engineering Summit: GaN Power ICs Lead the Way to Sustainability
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
WEKA FACHMEDIEN Interviews Navitas Semiconductor
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
Article: GaN Half-Bridge Integration Accelerates the Power-Electronics Revolution
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
Navitas CEO on CNBC: We need to reduce our reliance on legacy semiconductor chips
Gene Sheridan, Co-Founder and CEO of Navitas (NVTS), joins Worldwide Exchange to discuss the CHIPS Act’s impact on the semiconductor industry.
