In The Media
PSD: GaNFast Power ICs maximize transient voltage ratings and boost circuit ruggedness
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
Bodo’s Power Systems: Fully-Protected Half-Bridge Power ICs Enable Motor-Integrated Inverters
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
PSD: GaN Drives Development of Next-Generation EVs
"The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...
Compound Semiconductor: A GaN device for all markets
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
EE Times Green Engineering Summit: GaN Power ICs Lead the Way to Sustainability
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
WEKA FACHMEDIEN Interviews Navitas Semiconductor
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
Article: GaN Half-Bridge Integration Accelerates the Power-Electronics Revolution
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
Navitas CEO on CNBC: We need to reduce our reliance on legacy semiconductor chips
Gene Sheridan, Co-Founder and CEO of Navitas (NVTS), joins Worldwide Exchange to discuss the CHIPS Act’s impact on the semiconductor industry.
Current Sensing: Past, Present, and Future
While measuring voltage is often a simple task, measuring current is usually not so straightforward. This article demonstrates a new, highly integrated, “lossless,” and localized approach to current sensing that deals with many of the challenges. John Stevens,...
ChargerLab: Teardown of Anker GaNPrime 120W Charger
Navitas NV6136A delivers maximum efficiency in PFC stage for Anker’s GaNPrime Charger family. Navitas’ latest family of GaNFast Power ICs with GaNSense technology integrate control, drive, sensing and protection features for high density charger and adapter...
Anker Launches 150W Charger featuring GaNFast™ with GaNSense™ Technology!
"Navitas has worked in close partnership with Anker since 2017. Today, Navitas' next-generation GaNFast Power ICs with GaNSense technology are used in the latest Anker GaNPrime series replacing slow, inefficient, legacy silicon materials. In the GaNPrime series,...
Elektronik: Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives
Motor drives consume nearly 50% of the electricity produced in Europe. Governments have therefore created regulations and standards to make sure electricity is consumed as efficiently as possible with the least impact and disruptions to the electrical supply grid....
![TWST.COM: Navitas Semiconductor Corp. (NVTS) is the Way to Invest in Gallium Nitride [GaN] Fast Charging Electronics](https://navitassemi.com/wp-content/uploads/2022/07/TWST-Gene-Interview.jpg)
TWST.COM: Navitas Semiconductor Corp. (NVTS) is the Way to Invest in Gallium Nitride [GaN] Fast Charging Electronics
Navitas Semiconductor (NVTS) CEO Gene Sheridan wants investors to know that the environmental benefits are also commercial benefits. “Gallium Nitride [GaN], while it’s very advanced in material, and very advanced with the design innovations that Navitas [Semiconductor...
TSMC and Navitas: Partners in GaN for Efficiency & Sustainability
Dan Kinzer, COO/CTO of Navitas highlights next-generation GaNFast technology for ultra-fast mobile charging and higher-power system hardware including data center and EV applications at the TSMC 2022 North America Technology Symposium on June 16, 2022, in Santa Clara,...
Mint Lounge: The Tech Behind Fast Charging
"Phones with 45W and 67W fast chargers are making way for 120W and 150W charging solutions, and 200W and 240W charging tech are waiting in the wings." Gallium Nitride (GaN) revolutionizes fast charging for all mobile devices: phones, tablets and laptops by charging 3x...
Power Systems Design: Unlocking GaN’s Full Potential
“GaNFast™ Power ICs, with integrated drive, control and protection, enable the design of next generation high-density power converters without the difficulties associated with high-frequency switching environments, ‘hidden’ parasitic networks, and gate drive ringing...
