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DTSTART;VALUE=DATE:20260322
DTEND;VALUE=DATE:20260327
DTSTAMP:20260524T132657
CREATED:20260122T201946Z
LAST-MODIFIED:20260320T181704Z
UID:987506235-1774137600-1774569599@navitassemi.com
SUMMARY:APEC 2026 - San Antonio\, TX
DESCRIPTION:Navitas will be exhibiting solutions for AI data center\, performance computing\, grid and energy infrastructure\, and industrial electrification at APEC 2026 from March 22–26\, 2026\, in San Antonio\, Texas. Visit us at booth #2027 to learn more about our SiC and GaN products\, solutions and industry sessions: \nProducts: \n• Ultra-high voltage (UHV)  3300 V and 2300 V press-fit modules with epoxy–resin potting technology\, along with high-voltage 1200 V solutions based on latest Trench Assisted planar (TAP) architecture in SiCPAK™ power modules. A gate driver evaluation board for dynamic characterization of UHV SiCPAK power modules will also be on display. \n• Latest TO-247 (low-height) and QDPAK package solutions\, including 1200 V SiC based technology\, for AI data center power supplies. \n• New bare die products called Known Good Die (KGD) on 3300 V\, 2300 V\, 1700 V and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications. \n• GaNFast™ FETs\, ranging from 0.8mOhms at 100V to 11mOhms at 650 V in industry leading packages. \n• GaNSafe™ ICs for specifically created to serve demanding\, high-power applications\, such as AI data centers\, and industrial electrification. Navitas 4th generation integrates control\, drive\, sensing\, and critical protection features that enable unprecedented reliability and robustness. \n• Bi-directional GaN for single-stage conversion\, enabling the transition from two-stage to single-stage topologies\, to provide the highest efficiency\, power density\, and performance\, while reducing system cost and complexity. \n• A new family of GaNSlim™ Control ICs have been released to further simplify and speed up the development of small form factor\, high-power-density applications by offering the highest level of integration and thermal performance. Target markets include auxiliary PSUs for data centers and high-performance computing. \nAI Data Center Solutions: \n• 800 V–to–6 V Power Delivery Board (PDB)\, debuted at NVIDIA GTC 2026\, designed for next-generation NVIDIA MGX AI data centers. This high-density\, ultra-efficient platform eliminates an entire power conversion stage to reduce system cost and losses while freeing board space for compute\, memory\, and GPUs\, enabling maximum AI workload performance. \n• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V\, NV6066\,in TOLT package and 100 V\, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard for AI datacenters. \n• 12 kW AI data center power supply\, which leverages IntelliWeave™ digital control to achieve unmatched efficiency\, power density\, and performance for OCP PSU.Designed for production\, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers\, enabled by  GaNSafe ICs and GeneSiC™ MOSFETs. \n• World’s first 8.5 kW AI data center OCP PSU\, achieving 98% efficiency  for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs. \n• World’s highest power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs\, which demand 3× more power per rack – enabling the world’s highest power density at 137 W/in³ with over 97% efficiency. \n Industrial Electrification Solutions: \n• 400 W – 1 kW motor drive boards using GaNSense™ Motor Drive ICs\, delivering industry-leading performance\, efficiency\, and robustness for industrial applications. \n• 45W Auxiliary SMPS based on 1.7 kV SiC technology. \n• A 250KW DC-DC converter with an output of 950VDCat 480A\, and can be paralleled to achieve megawatt power capability\, developed by one of our key partners\, Brightloop will also be on display. \nPerformance Computing Solutions: \n• 300 W\, 240 W\, and 140 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers\, significantly reducing weight and thermal management requirements. \nGrid and Energy Solutions:  \n• For solid-state transformers (SST) application requiring high-efficiency power conversion such as over 98 % efficiency from medium voltage grid\, that is\, 13.8 kVAC – 34.5 kVAC to 800 VDC or 1500 VDC targeting AI data centers and grid and energy infrastructure segments. \n• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased. \nIndustry sessions:  \n• March 24 | 8:55–9:20 AM CT\nIS01.2 – Maximizing MVHV SiC Performance and Reliability with Advanced Power Device and Packaging Technologies for Mission-Critical Energy Infrastructure Applications\nPresenter: Sumit Jadav\, Navitas Semiconductor \n• March 25 | 11:05–11:30 AM CT\nIS07.6 – High-Power GaN ICs Deliver Leading Efficiency and Power Density in 800 V AI Data Center DC-DC Brick Solutions\nPresenter: Llew Vaughan-Edmunds\, Vice President & GM\, GaN Business Unit & Bin Li\, Director\, Applications Engineer \n• March 26 | 11:35–11:50 AM CT\nIS27.4 – Single-stage Power Converter Enabled by GaN Bidirectional Switches\nPresenter: Llew Vaughan-Edmunds\, Vice President & GM\, GaN Business Unit & Bin Li\, Director\, Applications Engineer \nExposition hours are: \nMonday\, March 23 (4:45 PM – 7:45 PM) \nTuesday\, March 24 (9:00 AM – 4:30 PM)\, and \nWednesday\, March 25 (9:00 AM – 2:30 PM) \nWe look forward to seeing you at our booth!  If you are interested in scheduling a meeting\, please reach out to your Navitas representative or write to info@navitassemi.com. \n 
URL:https://navitassemi.com/event/apec-2026/
LOCATION:Henry B. Gonzalez Convention Center\, 900 E Market St\, San Antonio\, TX\, TX 78205\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2026/01/APEC-2026-Event-Full-Res.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20240226
DTEND;VALUE=DATE:20240229
DTSTAMP:20260524T132657
CREATED:20240304T181027Z
LAST-MODIFIED:20240304T181027Z
UID:987501704-1708905600-1709164799@navitassemi.com
SUMMARY:APEC 2024
DESCRIPTION:APEC 2024 will take place at the Long Beach Convention & Entertainment Center\, 300 East Ocean Boulevard\, Long Beach\, CA 90802\, with exhibition running from February 26th – 28th. “Planet Navitas” is featured at booth #1353. \nTechnical presentations: \nTuesday 27th February\n“Reducing System Cost with GaN HEMTs in Motor Drive Applications”\n8:55am\, IS05.2\, Alfred Hesener\, Sr. Dir. Industrial & Consumer \n“A High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC”\n10:40am\, PSTT02.6\, Bin Li\, Dir. Applications \n“An Optimization Method for Planar Transformer Winding Losses in GaN Based Multi-Output Flyback Converter”\n11:40am\, PSTT01.9\, Xiucheng Huang\, Sr. Director \n“Electrify Our World” with Next-gen GaNFast and GeneSiC Power\, Dan Kinzer\n3:45pm\, exhibitor presentation\, location: 101B \nThursday 29th February\n“SiC & Package Innovations in Power Modules”\n8:30am-11:20am\, IS19\, Stephen Oliver\, Session Chair. \n“GaN Half-Bridge Power IC and AHB/Totem-Pole Topologies Enable 240W\, 150cc\, PD3.1 Solution with 95.5% Efficiency”\n8:55am\, PSTIS21.2\, Tom Ribarich\, Sr Dir. Strategic Marketing \n“Emerging Applications for Power Electronics”\n1:30pm-3:10pm\, IS27\, Llew-Vaughan-Edmunds\, Session Chair \n“High-Voltage SiC Optimized for Megawatt Charging in EV Long-haul Trucking”\n2:20pm\, IS27-3\, Stephen Oliver\, VP Corp Mktg & IR\, and Llew Vaughan-Edmunds\, Sr Dir. GeneSiC
URL:https://navitassemi.com/event/apec-2024/
LOCATION:Long Beach Convention & Entertainment Center\, 300 East Ocean Boulevard\, Long Beach\,\, CA\, CA 90802\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2022/12/Apec-Event.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20230319
DTEND;VALUE=DATE:20230323
DTSTAMP:20260524T132657
CREATED:20221216T152143Z
LAST-MODIFIED:20230313T174255Z
UID:987498179-1679184000-1679529599@navitassemi.com
SUMMARY:APEC 2023
DESCRIPTION:Navitas presentations:\nTuesday 21st March\n8:30 AM – 11:55 AM ETIS06 – Other Perspectives of Power Electronics – Markets\, Society and Policies\nIndustry Session Chair: Stephen Oliver\, MBA – Navitas Semiconductor \n9:45 AM – 10:10 AM ETIS06.4 – The Past\, Present\, and Future of Current Sensing\nIndustry Session Presenter: John Stevens – Navitas Semiconductor \n10:40 AM – 11:05 AM ETIS06.5 – Sustainability Benefits of GaNFast Power ICs\nIndustry Session Presenter: Anthony Schiro – Navitas Semiconductor \n2:15 PM – 2:45 PM – Pure-Play\, High-Speed GaNFast and GeneSiC: The Leading Edge of Next-Gen Power Semiconductors\nLocation: W202B \nWednesday 22nd March\n8:30 AM – 11:55 AM ETIS08 – Integrated WBG Semiconductors – Enhancing Power Density and Reducing Part Count\nIndustry Session Chair: Llew Vaughan-Edmunds – Navitas Semiconductor \n12:45 PM – 1:15 PM – GeneSiC high-speed\, high-voltage SiC drives high-power innovation\nLocation: W206A\, Speaker: Sumit Jadav – GeneSiC Semiconductor \n2:30 PM – 2:50 PM ET T23.4 – An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs\nTechnical Session Presenter: Xiucheng Huang/Jason Zhang \nThursday 23rd March\n9:45 AM – 10:10 AM ETIS19.4 – New GaNSense Half-Bridge IC Enables Next Gen High-Frequency\, High-Efficiency\, High-Density Topologies\nIndustry Session Presenter: Tom Ribarich – Navitas Semiconductor
URL:https://navitassemi.com/event/apec-2023/
LOCATION:Orange County Convention Center\, 9400 Universal Blvd\, Orlando\, FL\, FL 32819\, United States
CATEGORIES:Event
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2022/12/Apec-Event.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20220320
DTEND;VALUE=DATE:20220324
DTSTAMP:20260524T132657
CREATED:20210804T122057Z
LAST-MODIFIED:20220524T133252Z
UID:43125-1647734400-1648079999@navitassemi.com
SUMMARY:APEC 2022
DESCRIPTION:Join Navitas Semiconductor at Booth 1616! APEC 2022 is returning to an in-person format at the George R. Brown Convention Center\, Houston\, Texas. The Applied Power Electronics Conference (APEC) focuses on the practical and applied aspects of the power electronics business. This is not just a designer’s conference; APEC has something of interest for anyone involved in power electronics. \nClick the PDF below to view the presentation.
URL:https://navitassemi.com/event/apec-2022/
LOCATION:George R. Brown Convention Center\, Houston\, TX\, USA
CATEGORIES:IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2022/02/apec-2022-houston-TX.jpg
END:VEVENT
BEGIN:VEVENT
DTSTART;VALUE=DATE:20210614
DTEND;VALUE=DATE:20210617
DTSTAMP:20260524T132657
CREATED:20210824T105047Z
LAST-MODIFIED:20210824T105047Z
UID:43534-1623628800-1623887999@navitassemi.com
SUMMARY:APEC 2021 Virtual
DESCRIPTION:Navitas Semiconductor announced that the company will showcase GaN power ICs\, the leading\, next-generation power technology\, at the virtual Applied Power Electronics Conference (APEC 2021) June 14th – 17th\, 2021.
URL:https://navitassemi.com/event/apec-2021-virtual/
LOCATION:Virtual
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2021/08/PRAPEC-3-1-1080x675-1.jpeg
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