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DTSTART;VALUE=DATE:20250914
DTEND;VALUE=DATE:20250919
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SUMMARY:ICSCRM 2025
DESCRIPTION:ICSCRM 2025 promises an exceptional program\, comprising top-tier tutorials\, keynote lectures\, and an array of oral and poster presentations\, all backed by the Technical Program Committee. In addition to the technical program\, an exhibition showcasing the latest technologies and products in the field of silicon carbide and related materials will run concurrently. \nEvent Details: \nBooth:\n#092 \nPresentations:\nSid Sundaresan – Session Chair\n“Devices Physics\, Design\, and Characterization”\nSeptember 16th 2:45pm – 4:15pm KST \nArash Salemi\n“Benchmark Study of State-of-The-Art Commercial 1200V SiC MOSFETs for Automotive Applications”\nSeptember 17th 4:30pm – 6:30pm KST
URL:https://navitassemi.com/event/icscrm-2025/
LOCATION:Bexco (Busan Exhibition & Convention Center)\, 55 APEC-ro\, Haeundae-gu\, Busan\, 48060\, Korea\, Republic of
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2025/08/ICSCRM-2025-Event.jpg
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DTSTART;VALUE=DATE:20240929
DTEND;VALUE=DATE:20241004
DTSTAMP:20260525T072115
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SUMMARY:ICSCRM 2024
DESCRIPTION:ICSCRM provides a unique forum to those across the SiC semiconductor supply chain – material scientists\, equipment technologists\, device designers\, fab professionals\, and test and reliability engineers – to share technology updates\, research findings\, development experience\, and application knowledge.
URL:https://navitassemi.com/event/icscrm-2024/
LOCATION:Raleigh Convention Center\, 500 S Salisbury St\, Raleigh\, NC\, NC 27601\, United States
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2024/07/ICSCRM-2024-Event.jpg
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DTSTART;VALUE=DATE:20230917
DTEND;VALUE=DATE:20230922
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SUMMARY:ICSCRM2023
DESCRIPTION:“Navitas Semiconductor at ICSCRM 2023”:  \nPaper: “New Generation SiC MPS Diodes with Low Schottky Barrier Height”\nAditi Agarwal\, Siddarth Sundaresan\, Jaehoon Park\, Vamsi Mulpuri\, Kailun Zhong\nMonday\, September 18th\, 19:10\nIntroducing the latest 650V SiC MPS diodes\, featuring an ultra-low Schottky barrier height while maintaining extremely low reverse-leakage currents\, high avalanche-robustness\, and impressive surge currents. The performance metrics of these diodes are compared with other commercial 650V diode parts. \nPaper: “650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS(ON) of 1.92 mΩ-cm²”\nJaehoon Park\, Siddarth Sundaresan\, Aditi Agarwal\, Vamsi Mulpuri\, Nathaniel Walsh and Steven Smith\nMonday\, September 18th\, 19:40\nThe paper delves into the development of a new generation of SiC planar-gate power MOSFETs\, designed to offer remarkably tight VTH distribution and low RDS(on). These advancements are critical for SiC power modules in electric vehicle traction applications\, ensuring consistent and efficient performance. \nNavitas’ Senior Vice President of SiC Technology & Operations\, Sid Sundaresan\, will chair session “Devices 4: Short circuit\, avalanche and reliability\,” with focus on crucial topics in the field of SiC technology (Thursday\, September 21st\, from 11:00 to 12:30).\nNavitas Semiconductor invites all attendees to view the presentations and engage in discussions with their experts. Navitas’ participation at ICSCRM underscores commitment to driving innovation in SiC technology and reinforcing their position as a global leader in the field.
URL:https://navitassemi.com/event/icscrm2023/
LOCATION:Hilton Sorrento Palace\, Via Rivolo S.Antonio\, 13\, Sorrento\, 80067\, Italy
CATEGORIES:Event,IR
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