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X-WR-CALDESC:Events for Navitas
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DTSTART;VALUE=DATE:20260609
DTEND;VALUE=DATE:20260611
DTSTAMP:20260524T111815
CREATED:20260518T112306Z
LAST-MODIFIED:20260518T112506Z
UID:987506730-1780963200-1781135999@navitassemi.com
SUMMARY:PCIM 2026
DESCRIPTION:Navitas will be exhibiting at PCIM Europe 2026 from June 9–11\, 2026\, in Nuremberg\, Germany. \nVisit us at the Nürnberg Messe\, Hall 9\, Booth #544 to learn more about our SiC and GaN products\, solutions\, and industry applications across AI data center\, grid and energy infrastructure\, performance computing\, and industrial electrification. \nProducts:\n• Ultra-high voltage (UHV)  3300 V and 2300 V press-fit modules with epoxy–resin potting technology\, along with high-voltage 1200 V solutions based on the latest Trench Assisted planar (TAP)architecture Silicon Carbide in SiCPAK™ power modules. \n• 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP. \n• New bare die products called Known Good Die (KGD) on 3300 V\, 2300 V\, 1700 V\, and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications. \n• GaNFast™ Gallium Nitride FETs\, starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V in industry leading packages. \n• GaNSafe™ GaN ICs for specifically demanding\, high-power applications\, such as AI data centers\, and industrial electrification. Navitas 4th generation integrates control\, drive\, sensing\, and critical protection features that enable unprecedented reliability and robustness. \n• Bi-directional GaN for single-stage conversion\, enabling the transition from two-stage to single-stage topologies\, to provide the highest efficiency\, power density\, and performance\, while reducing system cost and complexity. \n• GaNSlim™ Control ICs for auxiliary PSUs for data centers and high-performance computing\, based on Navitas GaNFast Gallium Nitride technology\, offering the highest level of integration and thermal performance. \nSolutions: \nGrid and Energy Solutions:\n• For solid-state transformers (SST) application requiring ultra-high-efficiency from medium voltage grid\, that is\, 13.8 kVAC– 34.5 kVACto 800 VDC targeting AI data centers and grid and energy infrastructure segments. \n• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased. \nAI Data Center Solutions:\n• 20 kW 800 V-to-6 V GaN based power delivery board aiming 97.5% peak efficiency\, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency\, reliability\, cost-effectiveness\, and power density.\n \n• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V\, NV6066\,in TOLT package and 100 V\, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification delivering 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard as well. \n• 12 kW AI data center power supply\, which leverages IntelliWeave™ digital control to achieve unmatched efficiency\, power density\, and performance for OCP PSU. Designed for production\, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers\, enabled by GaNSafe ICs and GeneSiC™ MOSFETs. \n• World’s first 8.5 kW AI data center OCP PSU\, achieving 98% efficiency for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs. \n• High power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs\, which demand 3× more power per rack – enabling the high power density at 137 W/in³ with over 97% efficiency. \n Industrial Electrification Solutions:\n• 400 W – 1 kW motor drive boards using GaNSense™\, Navitas GaN technology\, Motor Drive ICs with integrated power stage\,delivering industry-leading performance\, efficiency\, and robustness for industrial applications. \n• 45W Auxiliary SMPS based on 1.7 kV GeneSiC SiC technology. \n• 300 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers\, significantly reducing weight and thermal management requirements. \n• 500W Solar micro inverter based on GaN BDS\, NV6428. \n• GaN Bi-directional switch eval board NVE107C using NV6427 in a half-bridge configuration\, driven by Navitas NV1702 IsoFast gate drivers. \nFeatured Partner Solutions:\n• A 250KW DC-DC converter with an output of 950VDCat 480A\, and can be paralleled to achieve megawatt power capability\, developed by one of our key partners\, Brightloop\, will also be on display. \n• An EPFL-developed full SST cell integrating the primary converter stage\, transformer\, and secondary conversion stage using a novel single-stage topology\, leveraging Navitas 3300 V and 1200 V SiC technology. \n• 50KVA Bi-Directional Active Front End\, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules\, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers. \nPanel and Presentations:\nTuesday\, June 9th | 1:25 -2:25  PM CET \nComponeers Panel Session: Automotive\, AI\, Humanoid Robots – the future of GaN\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Llew Vaughan-Edmunds\, VP & GM\, GaN Business Unit \nWednesday\, June 10 | 11:45 am – 12:45 pm CET\nPower Electronics News Panel Session: The Evolution in Data Center Power Distribution\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Llew Vaughan-Edmunds\, VP & GM\, GaN Business Unit \nWednesday\, June 10th | 2:30 – 3:30 PM CET\nBodo’s Panel Session: “Riding the SiC Wave Efficiently”\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Paul Wheeler\, VP & GM\, High Voltage SiC Business Unit \nThursday\, June 11th | 11:45 AM – 12:45 PM (CET)\nBodo’s Panel Session:  “What’s up\, what’s next for GaN?”\nTechnology Stage\, Hall 4\, PCIM Expo & Conference\nPresenter: Llew Vaughan-Edmunds\, VP & GM\, GaN Business Unit \nExposition hours are:\n• Tuesday\, June 9 (9:00 AM – 5:00 PM)\n• Wednesday\, June 10 (9:00 AM – 5:00 PM)\n• Thursday\, June 11 (9:00 AM – 5:00 PM) \n 
URL:https://navitassemi.com/event/pcim-2026/
LOCATION:Nuremberg Exhibition Center\, Nuremberg Exhibition Center\, Nuremberg\, Germany\, Germany
CATEGORIES:Event,IR
ATTACH;FMTTYPE=image/jpeg:https://navitassemi.com/wp-content/uploads/2026/05/PCIM-2026-Event.jpg
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