SiC POWER FETS AND DIODES

Markets and Technology

In applications from 20 W to 20 MW, and with device voltages from 650 V to 6.5 kV, GeneSiC silicon carbide (SiC) MOSFETs and Schottky MPS™ diodes drive high-speed, high-efficiency power conversion across diverse markets including EV, industrial automation, solar, wind, grid, motor drives and defense. High-volume, high-quality shipments ensure application performance, reliability and uptime availability.

Trench-Assisted Planar Gate: No-Compromise Technology

SiC MOSFETs offer superior conductivity and switching performance compared to silicon (Si) due to their ‘wide bandgap’ characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between manufacturability, performance, and/or reliability.

GeneSiC’s patented trench-assisted planar gate design is a no-compromise, next-generation solution; high-yield manufacturing, fast and cool operation, and extended, long-life reliability.

High Voltage Pioneers

GeneSiC have pioneered robust, high-voltage, high-efficiency SiC MOSFETs which are critical for reliable, harsh environment, high-power applications

Unique, advanced, integrated 6.5 kV technology
» Double-implanted metal oxide semiconductor (DMOSFET)
» Monolithically-integrated Junction barrier Schottky (JBS) rectifier
» Superior high-power performance
Higher efficiency bi-directional performance
» Temperature independent switching
» Fast (low switching loss) and cool (low conduction losses)
» Longer-term reliability
» Easy-to-parallel for high power (VTH stability)

Widest Range of SiC MOSFETs 750 V – 6.5 kV

To access product datasheets, models, and to order parts, please click here.

Cool. Fast.

Efficient, cost-effective power conversion relies on a comprehensive understanding of modern circuit topologies and high-speed (frequency) switching techniques. There are two main device factors;
• How well does the MOSFET conduct current (measured in R_DS(ON) )?
• How efficiently does the device ‘switch’ (measured by energy loss, or E_XX )?
For each question, we must understand the answer in both ‘hard-switch’ and ‘soft-switch’ topologies, and under tough high-temperature and high-speed conditions. Combined, a high-temperature, high-speed (frequency) figure-of-merit (FoM) is critical for system performance and reliability.

GeneSiC patented trench-assisted planar-gate technology delivers the lowest R_DS(ON) at high temperature and the lowest energy losses at high speeds. This enables unprecedented, industry-leading levels of performance, robustness and quality.

GeneSiC vs. competitor SiC FET
» 1200 V, 20 mΩ, TO-247-4L
» Higher drain current
» Lower conduction losses
» Cooler operation

GeneSiC vs. competitor SiC FET
» 1200 V, 40 mΩ, D2pak in half-bridge
» 150 kHz switching = ~10x faster than Si IGBT
» 30% lower FET loss vs. other SiC
» 25°C cooler operation = 3x longer lifetime

Rugged.

Typical Circuits

SiC Schottky MPS™ Diodes

Merged-PIN Schottky (MPS) Diodes combine two beneficial features from the PIN and Schottky diode. The PIN sustains excessive surge currents with low leakage, while the Schottky element offers low forward voltage drop and fast-switching characteristics. Target applications include PFC, Boost, and high-voltage, higher-power motor drives.

To access product datasheets, models, and to order parts, please click here.

Contact your local distributor or sales rep to discover the power of GeneSiC technology!

Samples available immediately with short volume-production lead times
Broadest silicon carbide portfolio – over 140 products in mass production (from 650 V to 6.5 kV)