Tech Features
Nvidia’s Grace Hopper Runs at 700 W, Blackwell Will Be 1 KW. How Is the Power Supply Industry Enabling Data Centers to Run These Advanced AI Processors?
Blackwell configurations will require 60 kW to 120 kW per rack but fewer than 5% of the world’s data centers are capable of supporting even 50kW per rack Generative AI’s proliferation is far from complete, but its rise has been (without trying to hyperbolise) little...
The state of AI: Global energy consumption from data centers is forecast to break 1 Petawatt-hour by 2026, how is the semiconductor industry responding?
The rate of data center growth has accelerated in recent years, with 7,000 facilities built or in construction. The key drivers in this growth is social media, streaming and cloud computing being a key driver in the growth… and of course, generative AI – not only for...
CDT: Teardown report of Belkin 200W quad USB-C port gallium nitride desktop charger
"Belkin is a well-known accessories brand, with chargers, data cables, wireless chargers, converters and other accessories. Charging Head Network has obtained the BoostCharge Pro USB-C 4-port gallium nitride charger launched by Belkin. This charger model is WCH015,...
CDT: Teardown report of Ugreen 200W 4C1A smart charging box Ultra+
"Ugreen has launched a smart charging magic box Ultra+ with 200W output power . This product is in the form of a desktop charger. It comes with a 1.8-meter-long power cord and is equipped with two new national standard five-hole jacks to meet the needs of powering...
CDT: Teardown report of GravaStar A65 Bumblebee co-branded gallium nitride charger
"This charger from Gravity Planet is a co-branded model of Transformers and Bumblebee. The charger shell is designed with a yellow tone and uses folding pins. The overall feel is quite good. The charger has a 2C1A interface, of which the USB-C1 interface has an output...
ChargerLab: TEGIC NIO Edition 210W GaN Power Station
"In 2021, TEGIC, a company that focuses on high-performance fast charging accessories, collaborated with NIO to launch a customized 90W GaN power station, which brought a high-power portable experience to NIO car owners. Recently, TEGIC and NIO have launched...
GeneSiC Digs Deep into Trench Technology
Yole Group's SiC MOSFET Comparison Report, covers 37 SiC transistors, demonstrating GeneSiC's unique 'Trench-Assisted Planar-Gate' technology, with the lowest FoMs in the industry! GeneSiC offers a no-compromise, next-generation solution; high-yield manufacturing,...
Embedded Computing Design Tear Down: Spigen ArcStation™ Pro GaN-based Charger
Spigen's ArcStation™ Pro 20W Wall Charger is engineered with Navitas' GaNFast™ technology that allows the ArcStation to be 30% smaller than the standard 18W iPhone charger. 'The charger is based on Gallium Nitride (GaN) technology, which is a big step forward from...
Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition.
SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
ChargerLab: Teardown of Realme 50W Mini SuperDart Charger
OPPO’s 50W Mini is a true next-generation GaN fast charger using the latest high-speed topology and enabled by GaNFast Power ICs. A ‘pulsed’ power conversion topology achieves the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...
ChargerLab: Teardown of New Samsung 45W GaN Charger
Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones are the latest-generation flagship smartphones from Samsung. They are supported with the small, powerful 45W Super Fast charger, which has the highest power density of any Samsung charger, enabled by NV6014,...
ChargerLab: Teardown of Anker 100W USB-C Charger, 736 Charger (Nano II 100W)
Anker’s Nano II 100W GaNPrime charger is 34% smaller than conventional silicon 96W charger, with similar capabilities plus two extra ports to power up your MacBook, iPhone, and AirPods all at the same time from a single charger. Using power GaN ICs enables a 100%...
ChargerLab: Teardown of Lenovo thinkplus GaN Nano 65W Charger
The Lenovo 65W USB-C GaN Adapter ushers in a new age of safe, efficient portable charging. Powered by Gallium Nitride (GaN) ICs, this charger is up to 55% smaller, 60% lighter, 30% more power-efficient compared to legacy silicon chargers. With PD 3.0 certification, it...
GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control
During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...
ChargerLab: Teardown of vivo iQOO 200W GaN Charger (For iQOO 10 Pro)
Vivo’s iQOO 10 high-end flagship smartphone is equipped with a new Snapdragon 8+ processor, 4700 mAh dual-cell battery, and supports both 200W ultra-fast charging and 50W wireless charging. iQ00 10 Pro is the first smartphone with a 200W optimized GaN ultra-fast...
GaNSense Half-Bridge IC – Over-temperature Protection
GaNSense Half-bridge ICs integrate over-temperature detection and protection (OTP) circuitry to protect the IC against excessively high junction temperatures (TJ). High junction temperatures can occur due to overload, high ambient temperatures, and/or poor thermal...
ChargerLab: Teardown of Lenovo Legion 135W USB-C GaN Charger
Lenovo’s Legion 5 and 5 Pro Gen 7 laptops are significant gaming machines, featuring AMD Rembrandt Ryzen 9 or Intel 12th-gen Alder Lake Core CPUs, AMD Radeon Vega or NVIDIA RTX GPUs, 32 GB of DDR5 memory, 1 TB of solid-state drive, up to 16” screens with 240...
ChargerLab: Teardown of Motorola Original 125W GaN Charger for MOTO X30 Pro
The Motorola X30 Pro is Motorola’s flagship smartphone, with the world’s first to feature a 200 MP main camera and sports a Snapdragon 8+ Gen 1 SoC. To support this powerful performance, the X30 Pro features a 4,610 mAhr battery, a 125 W ultra-fast wired charger, and...
GaNSense Half-Bridge IC – Over-Current Protection (OCP) Monitoring
During the on-time of each low-side switching cycle (INH = low, INL = high), should the peak current exceed the internal OCP threshold, then the internal low-side gate drive will turn the low-side GaN power FET off quickly and truncate the low-side on-time period to...
PSD: GaNFast Power ICs maximize transient voltage ratings and boost circuit ruggedness
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
PSD: GaN Drives Development of Next-Generation EVs
"The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...
GaNSense Half-Bridge IC – Autonomous Over-Current Protection (OCP)
GaNSense Half-bridge ICs integrated over current protection (OCP) provides cycle-by-cycle over-current detection and protection circuitry to protect the low-side GaN power FET against high current levels Find out more in our whitepaper and Application Note AN018:
GaNSense Half-Bridge IC – Loss-less current sensing monitoring
GaNSense Half-bridge ICs integrated current sense (VCS) feature shows excellent real-time matching and tracking performance versus inductor current (IL) at 1 A peak current levels for 120 W in an asymmetrical half-bridge (AHB) application circuit during steady-state,...
GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...
EE Times Green Engineering Summit: GaN Power ICs Lead the Way to Sustainability
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
GaNSense Half-Bridge IC – Loss-less current sensing
GaNSense Half-bridge ICs integration of lossless current sensing eliminates external current sensing resistors to increase system efficiency and reduce PCB footprint, eliminate RCS hot-spots. When comparing GaNSense technology versus existing external current sensing...
GaNSense Half-Bridge IC – Integrated Protection and Sensing
The GaNSense half-bridge IC integrates a rich feature-set of sensing and protection all into a low inductance, thermally enhanced, industry standard PQFN 6x8 package: Loss-less current sensing Autonomous short circuit protection (<30 ns) Overtemperature protection...
GaNSense Half-Bridge IC – Overview
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...
ChargerLab: Teardown of Anker GaNPrime 120W Charger
Navitas NV6136A delivers maximum efficiency in PFC stage for Anker’s GaNPrime Charger family. Navitas’ latest family of GaNFast Power ICs with GaNSense technology integrate control, drive, sensing and protection features for high density charger and adapter...
Power Systems Design: Unlocking GaN’s Full Potential
“GaNFast™ Power ICs, with integrated drive, control and protection, enable the design of next generation high-density power converters without the difficulties associated with high-frequency switching environments, ‘hidden’ parasitic networks, and gate drive ringing...
Power Electronics News: Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives
"The next big step in efficiency, both in the inverter and motor as well as in the overall system, can be achieved by using gallium nitride in the power stages. GaN-based devices are much closer to the ideal switch, offering significantly lower switching losses and...
ChargerLab: Teardown of Xiaomi 120W USB-C GaN Charger
“It only takes 15 mins to fully charge some Xiaomi smartphones, such as the Redmi Note pro 11+” “The switching transistor of PFC boost comes from Navitas NV6134. This is a GaN IC with highly integrated drive and protection circuit”
EE Times: Eggtronic Enables GaN-Based Charging for Electric Vehicles
E2Watt, a patented AC wireless power hybrid technology from Eggtronic is designed to increase the power and efficiency of wireless charging applications for home and automotive applications. Igor Spinella, CEO & founder of Eggtronic highlights their new hybrid...
