Half-Bridge
Power ICs

The next stage of the high-frequency revolution in
power electronics

New GaNFast™ half-bridge ICs with GaNSense technology integrate two GaN FETs and drive, plus control, with sensing and autonomous protection, to create a fundamental building-block used in power electronics. This revolutionary, one-package solution enables the highest efficiency, power density, and reliability.

The most integrated solution in the power semiconductor industry

 

  • Feature-rich, in low-profile, low-inductance, industry-standard 6 x 8 mm PQFN
  • Enables simpler, more flexible system designs
  • Easy-to-use includes built-in protection
  • Fast time-to-prototype and fast time-to-revenue

Designed to enable the next generation of soft-switching topologies and exploit GaN’s high-speed, fast-switching capability

Next generation power systems can now operate in the MHz, not kHz switching range!

The most integrated solution in the power semiconductor industry

 

  • Feature-rich, in low-profile, low-inductance, industry-standard 6 x 8 mm PQFN
  • Enables simpler, more flexible system designs
  • Easy-to-use includes built-in protection
  • Fast time-to-prototype and fast time-to-revenue

Designed to enable the next generation of soft-switching topologies and exploit GaN’s high-speed, fast-switching capability

Next generation power systems can now operate in the MHz, not kHz switching range!

Highest integration, fewest components, smallest footprint, and most robust

discrete vs half bridge

Half-Bridge Integration enables fastest switching, highest efficiency & power density using Soft-Switching topologies

Ultra-fast mobile chargers continue to transition to higher power in order to support faster charging times for increasingly power-hungry smartphones. New charging protocols such as USB PD 3.1 now support up to 240 W. For these higher power levels, soft-switching half-bridge topologies provide the fastest switching frequency, highest power density and maximum efficiency.

soft switching topology

Enabling compact size and integration in Motor Drives

Power Loss Comparison between IGBT, SJ-MOSFET, and GaNSense IC in Motor Drives

GaNSense half-bridge ICs provide significant reduction in switching losses compared to legacy silicon IGBTs or MOSFETs, offering an inverter efficiency improvement of up to 2.5%. This translates to a significant reduction in cost, weight and size of thermal management.

This enables next generation motors to incorporate the inverter stage into the motor chassis itself. More details can be found in our dedicated whitepapers and Application Note AN018.

Fewest components, highest integration, highest efficiency, and smallest footprint

Enabling compact size and integration in Motor Drives

Unprotected GaN

  • Exposed gate
  • Faulty switching
  • Dangerous ringing & glitching
  • Significant reliability risks

Navitas GaN Power IC

  • Integrated gate drive
  • Clean switching
  • Safe, robust and reliable performance