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PSD: GaN Drives Development of Next-Generation EVs

PSD: GaN Drives Development of Next-Generation EVs

"The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...

Compound Semiconductor: A GaN device for all markets

Compound Semiconductor: A GaN device for all markets

“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...

GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC

GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC

GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...