| Document |
Number of downloads |
| \"Electrify Our World” with Next-gen GaNFast and GeneSiC Power | 119 |
| 3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage | 482 |
| 300W Multi-Mode Totem-pole PFCUsing GaN Power ICs | 176 |
| 3rd-Gen Device Drives Ultra Power Density CRPS185 3,200 W Titanium Server Design (Chinese) | 57 |
| 45 W Auxiliary Power Supply Reference Design Using GeneSiC G2R1000MT17J | 144 |
| 650V AllGaN™ Power IC for Power Supply Applications (gallium nitride) | 117 |
| 80 PLUS® Ruby – The New Efficiency Target for Data Centers | 377 |
| A New 650V GaNFast Half Bridge IC for AC/DC Converter Applications (gallium nitride) | 63 |
| A New Era in Fast Charging: Let’s Go GaNFast! (English) | 52 |
| A New Generation of GaN Devices to Meet AI Server Power Demands | 237 |
| A Novel Digital Control Strategy for GaN-based Interleaving CrM Totem-pole PFC | 78 |
| Achieving Next Generation Power Density and Efficiency for AI and Hyperscale Data Center PSUs | 143 |
| Active Clamp Flyback Using GaN Power IC for Power Adapter Applications | 234 |
| Advancements in GaN Power IC System Integration | 50 |
| Advances in GaN Power ICs: Efficiency, Reliability & Autonomy | 81 |
| Advances in SiC Technologies Address High-Voltage Electrification Design Challenges | 232 |
| Advancing GaN Power ICs: Efficiency, Reliability & Autonomy | 196 |
| Advancing GaN Power Integration: Efficiency, Reliability & Autonomy | 69 |
| An Optimization Method for Planar Transformer Winding Losses in GaN Based Multi-Output Flyback Converter | 182 |
| An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs | 150 |
| AN006: QFN Assembly & Rework | 91 |
| AN010: Thermal Management of GaNFast™ Power ICs | 46 |
| AN011: Thermal Management of NV612x GaNFast Power ICs (gallium nitride) | 70 |
| AN015: New GaNFast™ Power ICs with GaNSense™ Technology Loss-Less Current Sensing & Autonomous Protection | 110 |
| AN015: 具有无损电流检测和自动保护功能的GaNSense™技术的新一代GaNFast™Power ICs | 50 |
| AN016: NV6169 PQFN 8x8 GaNFast™ Power IC with GaNSense™ Technology for Higher-Power Applications | 153 |
| AN019: New GaNFast™ Half-Bridge Power ICs with GaNSense™ Technology | 218 |
| AN020: Thermal Simulation Model | 83 |
| AN021: Gate-Driver IC Selection Guidelines for GeneSiC MOSFETs | 216 |
| AN022: PCB Layout Recommendations for GeneSiC MOSFETs | 393 |
| AN025: GaNSense™ Motor Drive ICs | 132 |
| AN026: 1200 V Schottky Diodes With Temperature Invariant Barrier Heights and Ideality Factors | 250 |
| AN027: 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching Applications | 200 |
| AN028: SiC Power Diode Reliability | 124 |
| AN029: Understanding the Datasheet of a SiC Power Schottky Diode | 288 |
| AN030: SPICE Model Usage Instructions | 87 |
| AN031: Design Guide for GaNSlim Serial Products Used in LLC Circuit | 105 |
| AN031: GaNSlim 系列产品用在LLC电路上的设计指导 | 107 |
| AN032: 0 V Turn-Off of Navitas’ 650 V Gen3 \'Fast\' Trench-Assisted Planar SiC MOSFETs | 84 |
| AN033 - Board Assembly Guidelines for TOLT package | 55 |
| AN035: Handling and Mounting Instructions for SiCPAK™ Power Modules | 43 |
| AN036: Design Guide for AHB Circuit With Controller NV9801 | 189 |
| AN037: Avalanche Capability of SiC MOSFETs | 66 |
| AN038: Paralleling Discrete GeneSiC™ Devices in Half-bridge Configurations for Higher-Power Applications | 107 |
| Anker 767 PowerHouse - GaNPrime 2048Wh | 2400W | 158 |
| At the Speed of GaN (gallium nitride) | 99 |
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives | 332 |
| Beyond Simply Replacing Silicon - System Level Impact of GaN Power ICs in Key Applications | 152 |
| Bi-Directional GaN & IsoFast Revolutionize Power Conversion with Single-Stage BDS Converters | 157 |
| Bi-Directional GaN Power ICs open up new possibilities in off-grid applications | 145 |
| Bi-Directional GaNFast™ Switches Open Doors for New High-Performance Topologies | 107 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Architecture, Performance in High-Power Systems | 114 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Power IC Solutions for EV, Solar & Industrial | 60 |
| Bodo’s Panel: The Industry Leader in GaN Power ICs | 101 |
| Breaking Speed Limits with GaN Power ICs | 153 |
| Breaking Speed Limits with GaN PowerICs | 53 |
| Capacitors going GaNFast: Opportunities and Challenges in High-Frequency Power Systems | 75 |
| Charging Into The GaNFast Future - Ugreen | 221 |
| Chinese Sustainability Report 2021 | 143 |
| CPSSC 2019 GaNFast Charger Update (gallium nitride) (Chinese) | 40 |
| Current Sensing: Past, Present, and Future | 279 |
| Delivering Performance, Let’s Go GaNFast! | 165 |
| Design Considerations of Highly-Efficient Active Clamp Flyback Converter Using GaNFast™ Power ICs | 194 |
| Do We Need to Progress Towards GHz Switching in High Power Systems and Applications? | 46 |
| Driving Electric Motors with GaN Power ICs | 49 |
| Driving For Zero Switching Losses | 73 |
| Driving up Power Density with GaN | 164 |
| Efficient 400-800V Charging & Conversion with GaNFast Power ICs & GeneSiC Trench-Assisted Planar-Gate MOSFETs | 176 |
| Electric motors benefit from GaNFast™ | 209 |
| Electrify Our World | 68 |
| Electrify Our World™ | 132 |
| Electrifying Our World: The Navitas Quality Journey | 53 |
| Electronica South China - Navitas | 59 |
| Empowering Zero Carbon Unleashing the Potential of Navitas GaN in Solar and Energy Storage Systems | 66 |
| Fast Forward to the GaN Data Center | 71 |
| First Production-Released 650 V Bi-Directional GaNFast Power ICs with IsoFast Dual-Channel Isolated GaN Driver | 76 |
| From 650V to 6.5 kV, GeneSiC MOSFETs Drive Innovation | 234 |
| From Science Fiction to Industry Fact: GaN Power ICs Enable the New Revolution in Power Electronics | 43 |
| Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives | 262 |
| Gallium Nitride (GaN) Enables Next-Generation High-Frequency Circuits | 91 |
| Gallium Nitride (GaN) Power IC Integration and Application (Chinese) | 584 |
| Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality | 86 |
| Gallium Nitride: Catalyst for the Next Generation of Power | 155 |
| GaN & SiC Technologies Enable Next-Gen AI Data Centers | 166 |
| GaN & SiC: Accelerating Revolutions (PDF) | 111 |
| GaN & SiC: Accelerating Revolutions (Video) | 72 |
| GaN Adoption, Market-by-Market | 48 |
| GaN and SiC Based 500kHz Resonant Bi-directional DC/DC Design for 800V OBCM Application (paper) | 143 |
| GaN and SiC Based 500kHz Resonant Bi-directional DC/DC Design for 800V OBCM Application (poster) | 177 |
| GaN Drives Development of Next-Generation EVs | 337 |
| GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies | 73 |
| GaN Half-Bridge Power IC and AHB/Totem-Pole Topologies Enable 240W, 150cc, PD3.1 Solution with 95.5% Efficiency | 299 |
| GaN High Density 300W AC-DC Converter | 158 |
| GaN ICs Drive Sustainability and Deliver CarbonNeutral Status | 66 |
| GaN ICs Simplify Designs, Improve Performance and Boost Robustness & Reliability | 65 |
| GaN Integration Drives Next-Generation Power Systems | 206 |
| GaN Matures for Industry with Monolithic Power ICs | 177 |
| GaN Power IC Adoption Takes Off in Fast Charging Market (gallium nitride) | 162 |
| GaN Power IC Enable 4x Power Density 150W AC/DC Converter Design | 227 |
| GaN power IC Innovations For High-Frequency, High-Power Industrial Motor Drive | 67 |
| GaN Power IC Technology: Past, Present & Future | 113 |
| GaN Power ICs and the High-Frequency Eco-System (gallium nitride) | 56 |
| GaN Power ICs at 1 MHz+:Topologies, Technologies and Performance | 104 |
| GaN Power ICs deliver breakthrough system performance with confident project costs and schedules | 218 |
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications | 442 |
| GaN Power ICs Drive Fast Charger Innovation and Market Adoption | 75 |
| GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter | 186 |
| GaN Power ICs Enable Next Gen Adapters | 212 |
| GaN Power ICs Enable Next-Generation Power Supplies | 59 |
| GaN Power ICs Enables a Revolution in AC-DC Adapters (gallium nitride) | 48 |
| GaN Power ICs Enabling Next-Gen ACF for Adapter/Charger Applications | 105 |
| GaN Power ICs: Device Integration Delivers Application Performance | 137 |
| GaN Power ICs: Integration Drives Performance | 47 |
| GaN Power Integrated Circuits | 94 |
| GaN Reliability Through Integration and Application Relevant Stress Testing | 57 |
| GaN Reliability: Beyond Performance and Efficiency | 199 |
| GaN Technology Enables Fast Electric Charging Systems | 65 |
| GaN-based High Frequency 6.6kW Bi-directional DCDC Converter for OBC Application | 411 |
| GaN-based High Frequency and High-power Density 2-in-1 Bidirectional OBCM Design for EV Application | 317 |
| GaN: Future Direction & Challenges | 53 |
| GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC | 54 |
| GaNFast Power IC Modeling (gallium nitride) | 931 |
| GaNFast Power ICs | 75 |
| GaNFast Power ICs Maximize Transient Voltage Ratings and Boost Circuit Ruggedness | 105 |
| GaNFast Power ICs maximize transient voltage ratings and boost circuit ruggedness | 58 |
| GaNFast Power ICs: Past - Present - Future | 36 |
| GaNFast Power ICs: The Game-Changer | 59 |
| GaNFast: The Power and the Quality | 305 |
| GaNFast™ 20-Year Warranty | 159 |
| GaNFast™ 20-Year Warranty (Chinese) | 117 |
| GaNFast™ and GeneSiC™: Twin Engines Drive the Future of High-Power Applications | 155 |
| GaNFast™ Half-Bridge IC and Applications | 110 |
| GaNSafe - the World\'s Safest GaN Power Semiconductor | 80 |
| GaNSafe Power ICs Create Highest Density and Efficiency in Data Center and EV Power Systems | 164 |
| GaNSafe™ Power ICs Create Highest Density and Efficiency in Data Center & EV Power Systems | 152 |
| GaNSense Half-Bridge IC - Loss-less current sensing | 109 |
| GaNSense Half-Bridge IC - Loss-less current sensing monitoring | 61 |
| GaNSense Half-Bridge IC - Over-temperature Protection | 69 |
| GaNSense Half-Bridge IC – Autonomous Over-Current Protection (OCP) | 80 |
| GaNSense Half-Bridge IC – Integrated Protection and Sensing | 60 |
| GaNSense Half-Bridge IC – Over-Current Protection (OCP) Monitoring | 100 |
| GaNSense Half-Bridge IC – Overview | 62 |
| GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control | 105 |
| GaNSense Motor Drive ICs for Home Appliance and Industrial | 65 |
| GaNSense Motor Drive ICs Integrates Performance, Protection, & Bi-Directional Sensing for Motor Drives | 82 |
| GaNSense™ Half-Bridge Integration Accelerates the Power-Electronics Revolution | 244 |
| GaNSense™ Power ICs Enable Next-Gen, Ultra-High-Efficiency and High-Power-Density 140 W, PD3.1 Adapter Designs | 217 |
| GaNSense™ Power ICs Integrate Fast, Autonomous, Precise Protection Circuits for Ultimate System Robustness | 76 |
| GaNSense™ 半桥集成技术加速电力电子技术革命 | 91 |
| GeneSiC Digs Deep into Trench Technology | 47 |
| GeneSiC high-speed, high-voltage SiC drives high-power innovation | 166 |
| GeneSiC Power Devices | 72 |
| Green Engineering Summit: GaN Power ICs Lead the Way to Sustainability | 66 |
| Half-Bridge GaN Power ICs: Performance and Application | 76 |
| Here Come the GaN Chargers (gallium nitride) | 61 |
| High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC | 104 |
| High Power, High Voltage, High Speed: GaN and SiC Electrify Our World™ | 90 |
| High-Density 65W USB-PD GaN Chargers: Market Demand, Technical Solutions and Pricing | 292 |
| High-Density Power for the AI Revolution | 145 |
| High-Frequency 150W PFC-LLC with GaN Power ICs (gallium nitride) | 847 |
| High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CPRS Application Using GaN Power IC | 555 |
| High-Frequency PFC-LLC with GaN Power ICs (gallium nitride) | 190 |
| High-Power GaN ICs & FETs for Next-Gen 800V AI Data Centers | 309 |
| High-Speed Gen3 Fast GeneSiC MOSFETs Deliver Best-In-Class Performance | 140 |
| High-Voltage SiC Accelerates Heavy-Duty EV Trucking | 41 |
| High-Voltage SiC for Storage & MV-Grid Conversion | 126 |
| High-Voltage SiC Optimized for Megawatt Charging in EV Long-haul Trucking | 91 |
| How the Si to GaN SiC Transition Accelerates Our Journey From Fossil Fuels | 59 |
| Integrated GaN Power Solution and Application (纳微集成氮化镓电源解决方案及应用) (Chinese) | 235 |
| International Women in Engineering Day | 61 |
| Living Well Off the Grid | 78 |
| Make it Easy with GaN Power ICs | 80 |
| MHz Switching Capable 650 V & 1200 V SiC MPS™ Diodes in SMB Package | 42 |
| Monolithic GaN Device Integration Drives Efficiency | 130 |
| Monolithic GaN Device Integration Drives Efficiency,Density and Reliability in Power Conversion | 81 |
| Monolithic HV GaN Power ICs: Performance and Application | 147 |
| Navitas Delivers AI Server Power: GaN & SiC Hybrid 4.5 kW | 129 |
| Navitas Exhibitor Seminar | 59 |
| Navitas GaNFast™ IC Field Results in High-Volume Production | 212 |
| Navitas GaNSafe™️ and GeneSiC™️ Double Engine Drive Automotive Power Future | 184 |
| Navitas Reliability Test Standards | 11504 |
| Navitas Semi (Shanghai) ISO9001 (Chinese) | 181 |
| Navitas Semi (Shanghai) ISO9001 (English) | 72 |
| Navitas Semi US ISO9001 (2015) | 36 |
| Navitas\' Help Enables GaN-Based Charging for Electric Vehicles | 29 |
| New GaNSense Half-Bridge IC Enables Next Gen High-Frequency, High-Efficiency, High-Density Topologies | 197 |
| New-Generation of Trench-Assisted Planar SiC MOSFETs | 154 |
| New-Generation SiC MPS Diodes with low knee voltages | 99 |
| Next-Generation Gallium Nitride Semiconductor Accelerates Carbon Neutrality | 71 |
| Next-generation GaN Isolators / Level-Shifters for High Frequency | 216 |
| Next-Generation GaN power ICs Drive Transformer Revolution | 87 |
| Overview of the Trench-Assisted Planar SiC MOSFET Architecture | 114 |
| PCIM 2024 - GaN Wide Bandgap Design the Future of Power (Bodos Panel) | 92 |
| Performance and Reliability Gains in UHV SiC Using Advanced Power Devices and Packaging Technologies | 95 |
| Planet Navitas Showcases Tomorrow’s Sustainable World at CES 2023 | 414 |
| Power Delivery Roadmap for AI | 208 |
| Power Density in AI Data Center PSUs: How Do We Move Above 100 W/In3 | 101 |
| Power Up Virtual Expo: Electrify Our World™ | 47 |
| Pulsed ACF for Low-Profile GaN Fast Chargers | 41 |
| Pure-Play, High-Speed GaNFast and GeneSiC | 175 |
| Pure-Play, Next-Generation Power Semiconductors | 109 |
| RED | 129 |
| Redefining Data Center Power - GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure | 105 |
| Reducing Consumer Electronics’ impact with Gallium Nitride (GaN) Power Semiconductors | 92 |
| Reducing System Cost with GaN FETs in Motor Drive Applications | 84 |
| Reliability and Cost-of-Ownership Optimization in Industrial Power Supplies | 99 |
| Reliability Testing and Qualification of GaNPower Integrated Circuits | 222 |
| Rising Data Center Power Demands Call for Safer GaN Gates | 59 |
| Robust GaN Power ICs Drive into High-Power, High-Reliability Systems | 69 |
| SiC and GaN Applications in Electric Vehicles: Current Issues | 122 |
| SiC Delivers Next-Generation Efficiency and Sustainability | 222 |
| SiC-based Bidirectional Three-phase CLLLC Resonant Converter with Integrated Magnetics for High-Power On-Board Charger Applications | 180 |
| SiCPAK™ - Unparalleled Reliability & Efficient High-Temperature Performance | 72 |
| Silicon Carbide MPS Diodes Boost Efficiency and Reliability | 298 |
| Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Applications | 786 |
| Something You Want With Navitas GaN - Spigen | 65 |
| Speed Drives Performance | 69 |
| State-of-the-Art Mobile Charging: Topologies, Technologies and Performance | 54 |
| Step Up to Half-Bridge GaN Power ICs | 48 |
| Study of Magnetics Frequency vs. Efficiency Enables a New Class of High-Density PFC/LLC Converters | 208 |
| Successful High-Frequency Applications with SiC | 132 |
| Sustainability Benefits of GaNFast Power ICs | 68 |
| Sustainability Report 2021 | 109 |
| System integration benefits of GaN Power ICs (gallium nitride) | 103 |
| Systematic approach to GaN power IC reliability | 98 |
| Take a Practical Path Toward High-Performance Power Conversion | 43 |
| Tear Down: Spigen ArcStation™ Pro GaN-based Charger | 168 |
| Teardown of Anker 100W USB-C Charger, 736 Charger (Nano II 100W) | 87 |
| Teardown of Anker GaNPrime 120W Charger | 71 |
| Teardown of Lenovo Legion 135W USB-C GaN Charger | 64 |
| Teardown of Lenovo thinkplus GaN Nano 65W Charger | 73 |
| Teardown of Motorola Original 125W GaN Charger for MOTO X30 Pro | 47 |
| Teardown of New Samsung 45W GaN Charger | 106 |
| Teardown of Realme 50W Mini SuperDart Charger | 55 |
| Teardown of vivo iQOO 200W GaN Charger (For iQOO 10 Pro) | 92 |
| Teardown of Xiaomi 120W USB-C GaN Charger | 92 |
| Teardown report of Belkin 200W quad USB-C port gallium nitride desktop charger | 99 |
| Teardown report of GravaStar A65 Bumblebee co-branded gallium nitride charger | 87 |
| Teardown report of Ugreen 200W 4C1A smart charging box Ultra+ | 53 |
| TEGIC NIO Edition 210W GaN Power Station | 73 |
| The Environmental Footprint of Wide Bandgap Semiconductors Versus Silicon in CRPS PSUs for AI Data Centers | 101 |
| The Future of Charging is GaNFast! (English) | 84 |
| The Future of Power: High-Frequency Systems Enabled by GaN | 48 |
| The GaN Revolution in Fast Charging & Power Conversion | 162 |
| The Genesis of GeneSiC and the Future of Silicon Carbide | 233 |
| The Past, Present, and Future of Current Sensing | 144 |
| The Power of GaNFast Technology on the OnePlus 10T-5G | 80 |
| The Role of PSU Design in Meeting AI Data Center Power and Efficiency Needs | 153 |
| The SiC Evolution and GaN Revolution for Electric Vehicles | 136 |
| The Silicon Chip is Dead! | 102 |
| Traction, Charging and Sustainability – Addressing High-Voltage EV Challenges with SiC | 215 |
| Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition | 71 |
| Trench-Assisted Planar SiC MOSFET Technology | 143 |
| Trench-Assisted Planar SiC MOSFET Technology - Brochure | 56 |
| Trench-Assisted Planar Technology | 99 |
| TSMC Technology Symposium 2022 | 77 |
| UG002 | 121 |
| UG009 | 15 |
| UG016 | 81 |
| UG018 | 40 |
| UG022 | 80 |
| UG024 | 162 |
| Unlocking GaN\'s Full Potential | 59 |
| Unlocking the Power of GaN | 184 |
| Variable-Speed Motor Drives Reap Benefits Of Integrated GaN | 202 |
| Vollständig geschützte GaN-Leistungs-ICs sorgen für robuste und kostengünstige Motorantriebe | 35 |
| Welcome to the Post-Silicon World: Wide Bandgap Powers Ahead | 80 |
| Wide Bandgap Goes Mainstream | 56 |
| Wide Bandgap Power to Electrify Our World for a Sustainable Future | 147 |
| World’s First 12 kW PSU for Hyper-Scale AI Data Centers using GaN and SiC | 185 |
| World’s First 8.5 kW PSU for AI Data Centers using only GaN and SiC | 119 |
| 以 GaN 与 SiC 技术 重构下一代 800 VDC 数据中心电力基础架构 | 178 |
| 全面保护型半桥功率IC赋能电机集成逆变器 | 134 |
| 双向氮化镓开关搭配IsoFast高速驱动器打造单级变换新范式，有效缩减系统体积、成本及复杂度 | 131 |
| 搭载IsoFast双通道隔离式氮化镓驱动器的全球首款量产型650VGaNFast双向氮化镓 功率芯片 | 74 |
| 支持MHz开关频率的650V与1200V的 SMB封装碳化硅MPS™ 二极管 | 78 |
| 沟槽辅助平面栅的碳化硅MOSFET技术 - Brochure | 69 |
| 纳微GaNFast：定义快充新未来！(The Future of Charging is GaNFast!) (Chinese) | 69 |
| 纳微GaNsafe™ 驱动超高性能AI服务器电源设计 | 121 |
| 纳微氮化镓市场分享及展望A New Era in Fast Charging: Let’s Go GaNFast! (Chinese) | 102 |
| 采用了GaNSense™技术的NV6169 PQFN 8x8 GaNFast™功率IC，适用于更高功率的应用 | 99 |
| 采用无损电流采样的高集成GaNSense Control和GaN Halfbridge方案 | 74 |
| Document |
Number of downloads |
| 300W Multi-Mode Totem-pole PFCUsing GaN Power ICs | 162 |
| 650V AllGaN™ Power IC for Power Supply Applications (gallium nitride) | 72 |
| A New 650V GaNFast Half Bridge IC for AC/DC Converter Applications (gallium nitride) | 80 |
| A New Era in Fast Charging: Let’s Go GaNFast! (English) | 37 |
| Active Clamp Flyback Using GaN Power IC for Power Adapter Applications | 84 |
| Advancements in GaN Power IC System Integration | 81 |
| Advances in GaN Power ICs: Efficiency, Reliability & Autonomy | 93 |
| Advancing GaN Power ICs: Efficiency, Reliability & Autonomy | 171 |
| Advancing GaN Power Integration: Efficiency, Reliability & Autonomy | 102 |
| AN006: QFN Assembly & Rework | 86 |
| AN010: Thermal Management of GaNFast™ Power ICs | 67 |
| AN011: Thermal Management of NV612x GaNFast Power ICs (gallium nitride) | 80 |
| AN015: New GaNFast™ Power ICs with GaNSense™ Technology Loss-Less Current Sensing & Autonomous Protection | 203 |
| AN015: 具有无损电流检测和自动保护功能的GaNSense™技术的新一代GaNFast™Power ICs | 1296 |
| AN016: NV6169 PQFN 8x8 GaNFast™ Power IC with GaNSense™ Technology for Higher-Power Applications | 797 |
| At the Speed of GaN (gallium nitride) | 45 |
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives | 214 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Architecture, Performance in High-Power Systems | 78 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Power IC Solutions for EV, Solar & Industrial | 71 |
| Bodo’s Panel: The Industry Leader in GaN Power ICs | 63 |
| Breaking Speed Limits with GaN Power ICs | 733 |
| Breaking Speed Limits with GaN PowerICs | 31 |
| Capacitors going GaNFast: Opportunities and Challenges in High-Frequency Power Systems | 473 |
| Chinese Sustainability Report 2021 | 98 |
| CPSSC 2019 GaNFast Charger Update (gallium nitride) (Chinese) | 422 |
| Current Sensing: Past, Present, and Future | 162 |
| Delivering Performance, Let’s Go GaNFast! | 325 |
| Design Considerations of Highly-Efficient Active Clamp Flyback Converter Using GaNFast™ Power ICs | 358 |
| Do We Need to Progress Towards GHz Switching in High Power Systems and Applications? | 337 |
| Driving For Zero Switching Losses | 424 |
| Electrify Our World™ | 56 |
| Electrifying Our World: The Navitas Quality Journey | 478 |
| Electronica South China - Navitas | 76 |
| Fast Forward to the GaN Data Center | 65 |
| From Science Fiction to Industry Fact: GaN Power ICs Enable the New Revolution in Power Electronics | 593 |
| Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives | 63 |
| Gallium Nitride (GaN) Enables Next-Generation High-Frequency Circuits | 74 |
| Gallium Nitride (GaN) Power IC Integration and Application (Chinese) | 3038 |
| Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality | 63 |
| Gallium Nitride: Catalyst for the Next Generation of Power | 55 |
| GaN Adoption, Market-by-Market | 58 |
| GaN Drives Development of Next-Generation EVs | 332 |
| GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies | 101 |
| GaN High Density 300W AC-DC Converter | 14279 |
| GaN ICs Drive Sustainability and Deliver CarbonNeutral Status | 104 |
| GaN ICs Simplify Designs, Improve Performance and Boost Robustness & Reliability | 118 |
| GaN Integration Drives Next-Generation Power Systems | 98 |
| GaN Matures for Industry with Monolithic Power ICs | 264 |
| GaN Power IC Adoption Takes Off in Fast Charging Market (gallium nitride) | 455 |
| GaN Power IC Enable 4x Power Density 150W AC/DC Converter Design | 306 |
| GaN Power IC Technology: Past, Present & Future | 668 |
| GaN Power ICs and the High-Frequency Eco-System (gallium nitride) | 265 |
| GaN Power ICs at 1 MHz+:Topologies, Technologies and Performance | 390 |
| GaN Power ICs deliver breakthrough system performance with confident project costs and schedules | 229 |
| GaN Power ICs Drive Fast Charger Innovation and Market Adoption | 127 |
| GaN Power ICs Enable Next Gen Adapters | 300 |
| GaN Power ICs Enable Next-Generation Power Supplies | 468 |
| GaN Power ICs Enables a Revolution in AC-DC Adapters (gallium nitride) | 314 |
| GaN Power ICs Enabling Next-Gen ACF for Adapter/Charger Applications | 602 |
| GaN Power ICs: Device Integration Delivers Application Performance | 505 |
| GaN Power ICs: Integration Drives Performance | 323 |
| GaN Power Integrated Circuits | 409 |
| GaN Reliability Through Integration and Application Relevant Stress Testing | 442 |
| GaN Reliability: Beyond Performance and Efficiency | 152 |
| GaN Technology Enables Fast Electric Charging Systems | 44 |
| GaN: Future Direction & Challenges | 72 |
| GaNFast Power IC Modeling (gallium nitride) | 428 |
| GaNFast Power ICs Maximize Transient Voltage Ratings and Boost Circuit Ruggedness | 95 |
| GaNFast Power ICs: Past - Present - Future | 43 |
| GaNFast Power ICs: The Game-Changer | 77 |
| GaNFast™ 20-Year Warranty | 107 |
| GaNFast™ 20-Year Warranty (Chinese) | 75 |
| GaNFast™ and GeneSiC™: Twin Engines Drive the Future of High-Power Applications | 90 |
| GaNFast™ Half-Bridge IC and Applications | 180 |
| GaNSense™ Half-Bridge Integration Accelerates the Power-Electronics Revolution | 200 |
| GaNSense™ 半桥集成技术加速电力电子技术革命 | 162 |
| Half-Bridge GaN Power ICs: Performance and Application | 63 |
| Here Come the GaN Chargers (gallium nitride) | 64 |
| High-Density 65W USB-PD GaN Chargers: Market Demand, Technical Solutions and Pricing | 607 |
| High-Frequency 150W PFC-LLC with GaN Power ICs (gallium nitride) | 558 |
| High-Frequency PFC-LLC with GaN Power ICs (gallium nitride) | 574 |
| Integrated GaN Power Solution and Application (纳微集成氮化镓电源解决方案及应用) (Chinese) | 611 |
| International Women in Engineering Day | 58 |
| Make it Easy with GaN Power ICs | 45 |
| Monolithic GaN Device Integration Drives Efficiency | 306 |
| Monolithic GaN Device Integration Drives Efficiency,Density and Reliability in Power Conversion | 381 |
| Monolithic HV GaN Power ICs: Performance and Application | 54 |
| Navitas Exhibitor Seminar | 48 |
| Navitas Reliability Test Standards | 418 |
| Next-Generation Gallium Nitride Semiconductor Accelerates Carbon Neutrality | 49 |
| Next-generation GaN Isolators / Level-Shifters for High Frequency | 745 |
| NV613xA-Reliability | 1 |
| Power Up Virtual Expo: Electrify Our World™ | 64 |
| Pulsed ACF for Low-Profile GaN Fast Chargers | 83 |
| Pure-Play, Next-Generation Power Semiconductors | 117 |
| RED | 18 |
| Reducing Consumer Electronics’ impact with Gallium Nitride (GaN) Power Semiconductors | 85 |
| Reliability Testing and Qualification of GaNPower Integrated Circuits | 409 |
| SiC and GaN Applications in Electric Vehicles: Current Issues | 353 |
| Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Applications | 324 |
| Speed Drives Performance | 269 |
| State-of-the-Art Mobile Charging: Topologies, Technologies and Performance | 507 |
| Step Up to Half-Bridge GaN Power ICs | 56 |
| Study of Magnetics Frequency vs. Efficiency Enables a New Class of High-Density PFC/LLC Converters | 358 |
| Sustainability Report 2021 | 40 |
| System integration benefits of GaN Power ICs (gallium nitride) | 267 |
| Systematic approach to GaN power IC reliability | 620 |
| Take a Practical Path Toward High-Performance Power Conversion | 50 |
| The Future of Charging is GaNFast! (English) | 95 |
| The Future of Power: High-Frequency Systems Enabled by GaN | 47 |
| The GaN Revolution in Fast Charging & Power Conversion | 56 |
| TSMC Technology Symposium 2022 | 84 |
| UG002 | 564 |
| UG009 | 463 |
| UG016 | 709 |
| UG018 | 1147 |
| UG019 | 1 |
| UG022 | 988 |
| UG023 | 1 |
| UG024 | 1224 |
| Unlocking the Power of GaN | 292 |
| Vollständig geschützte GaN-Leistungs-ICs sorgen für robuste und kostengünstige Motorantriebe | 41 |
| Welcome to the Post-Silicon World: Wide Bandgap Powers Ahead | 546 |
| 纳微GaNFast：定义快充新未来！(The Future of Charging is GaNFast!) (Chinese) | 68 |
| 纳微氮化镓市场分享及展望A New Era in Fast Charging: Let’s Go GaNFast! (Chinese) | 77 |
| 采用了GaNSense™技术的NV6169 PQFN 8x8 GaNFast™功率IC，适用于更高功率的应用 | 135 |
