| Document |
Number of downloads |
| \"Electrify Our World” with Next-gen GaNFast and GeneSiC Power | 137 |
| 3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage | 318 |
| 300W Multi-Mode Totem-pole PFCUsing GaN Power ICs | 119 |
| 3rd-Gen Device Drives Ultra Power Density CRPS185 3,200 W Titanium Server Design (Chinese) | 58 |
| 650V AllGaN™ Power IC for Power Supply Applications (gallium nitride) | 88 |
| A New 650V GaNFast Half Bridge IC for AC/DC Converter Applications (gallium nitride) | 46 |
| A New Era in Fast Charging: Let’s Go GaNFast! (English) | 38 |
| A New Generation of GaN Devices to Meet AI Server Power Demands | 110 |
| Active Clamp Flyback Using GaN Power IC for Power Adapter Applications | 161 |
| Advancements in GaN Power IC System Integration | 42 |
| Advances in GaN Power ICs: Efficiency, Reliability & Autonomy | 30 |
| Advances in SiC Technologies Address High-Voltage Electrification Design Challenges | 96 |
| Advancing GaN Power ICs: Efficiency, Reliability & Autonomy | 63 |
| Advancing GaN Power Integration: Efficiency, Reliability & Autonomy | 50 |
| An Optimization Method for Planar Transformer Winding Losses in GaN Based Multi-Output Flyback Converter | 220 |
| An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs | 193 |
| AN006: QFN Assembly & Rework | 49 |
| AN010: Thermal Management of GaNFast™ Power ICs | 41 |
| AN011: Thermal Management of NV612x GaNFast Power ICs (gallium nitride) | 54 |
| AN015: New GaNFast™ Power ICs with GaNSense™ Technology Loss-Less Current Sensing & Autonomous Protection | 75 |
| AN015: 具有无损电流检测和自动保护功能的GaNSense™技术的新一代GaNFast™Power ICs | 52 |
| AN016: NV6169 PQFN 8x8 GaNFast™ Power IC with GaNSense™ Technology for Higher-Power Applications | 123 |
| AN019: New GaNFast™ Half-Bridge Power ICs with GaNSense™ Technology | 186 |
| AN020: Thermal Simulation Model | 58 |
| AN021: Gate-Driver IC Selection Guidelines for GeneSiC MOSFETs | 217 |
| AN022: PCB Layout Recommendations for GeneSiC MOSFETs | 155 |
| AN026: 1200 V Schottky Diodes With Temperature Invariant Barrier Heights and Ideality Factors | 127 |
| AN027: 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching Applications | 155 |
| AN028: SiC Power Diode Reliability | 52 |
| AN029: Understanding the Datasheet of a SiC Power Schottky Diode | 137 |
| AN030: SPICE Model Usage Instructions | 41 |
| AN031: Design Guide for GaNSlim Serial Products Used in LLC Circuit | 200 |
| AN031: GaNSlim 系列产品用在LLC电路上的设计指导 | 64 |
| Anker 767 PowerHouse - GaNPrime 2048Wh | 2400W | 126 |
| At the Speed of GaN (gallium nitride) | 38 |
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives | 276 |
| Beyond Simply Replacing Silicon - System Level Impact of GaN Power ICs in Key Applications | 66 |
| Bi-Directional GaN Power ICs open up new possibilities in off-grid applications | 135 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Architecture, Performance in High-Power Systems | 45 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Power IC Solutions for EV, Solar & Industrial | 41 |
| Bodo’s Panel: The Industry Leader in GaN Power ICs | 46 |
| Breaking Speed Limits with GaN Power ICs | 73 |
| Breaking Speed Limits with GaN PowerICs | 39 |
| Capacitors going GaNFast: Opportunities and Challenges in High-Frequency Power Systems | 64 |
| Charging Into The GaNFast Future - Ugreen | 138 |
| Chinese Sustainability Report 2021 | 62 |
| CPSSC 2019 GaNFast Charger Update (gallium nitride) (Chinese) | 28 |
| Current Sensing: Past, Present, and Future | 312 |
| Delivering Performance, Let’s Go GaNFast! | 47 |
| Design Considerations of Highly-Efficient Active Clamp Flyback Converter Using GaNFast™ Power ICs | 137 |
| Do We Need to Progress Towards GHz Switching in High Power Systems and Applications? | 46 |
| Driving For Zero Switching Losses | 57 |
| Driving up Power Density with GaN | 215 |
| Efficient 400-800V Charging & Conversion with GaNFast Power ICs & GeneSiC Trench-Assisted Planar-Gate MOSFETs | 212 |
| Electric motors benefit from GaNFast™ | 143 |
| Electrify Our World | 30 |
| Electrify Our World™ | 88 |
| Electrifying Our World: The Navitas Quality Journey | 48 |
| Electronica South China - Navitas | 37 |
| Empowering Zero Carbon Unleashing the Potential of Navitas GaN in Solar and Energy Storage Systems | 53 |
| Fast Forward to the GaN Data Center | 49 |
| From 650V to 6.5 kV, GeneSiC MOSFETs Drive Innovation | 122 |
| From Science Fiction to Industry Fact: GaN Power ICs Enable the New Revolution in Power Electronics | 48 |
| Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives | 174 |
| Gallium Nitride (GaN) Enables Next-Generation High-Frequency Circuits | 36 |
| Gallium Nitride (GaN) Power IC Integration and Application (Chinese) | 139 |
| Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality | 36 |
| Gallium Nitride: Catalyst for the Next Generation of Power | 113 |
| GaN & SiC: Accelerating Revolutions (PDF) | 53 |
| GaN & SiC: Accelerating Revolutions (Video) | 51 |
| GaN Adoption, Market-by-Market | 34 |
| GaN and SiC Based 500kHz Resonant Bi-directional DC/DC Design for 800V OBCM Application (paper) | 82 |
| GaN and SiC Based 500kHz Resonant Bi-directional DC/DC Design for 800V OBCM Application (poster) | 144 |
| GaN Drives Development of Next-Generation EVs | 241 |
| GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies | 35 |
| GaN Half-Bridge Power IC and AHB/Totem-Pole Topologies Enable 240W, 150cc, PD3.1 Solution with 95.5% Efficiency | 141 |
| GaN High Density 300W AC-DC Converter | 630 |
| GaN ICs Drive Sustainability and Deliver CarbonNeutral Status | 43 |
| GaN ICs Simplify Designs, Improve Performance and Boost Robustness & Reliability | 41 |
| GaN Integration Drives Next-Generation Power Systems | 154 |
| GaN Matures for Industry with Monolithic Power ICs | 52 |
| GaN Power IC Adoption Takes Off in Fast Charging Market (gallium nitride) | 145 |
| GaN Power IC Enable 4x Power Density 150W AC/DC Converter Design | 187 |
| GaN power IC Innovations For High-Frequency, High-Power Industrial Motor Drive | 108 |
| GaN Power IC Technology: Past, Present & Future | 115 |
| GaN Power ICs and the High-Frequency Eco-System (gallium nitride) | 52 |
| GaN Power ICs at 1 MHz+:Topologies, Technologies and Performance | 73 |
| GaN Power ICs deliver breakthrough system performance with confident project costs and schedules | 69 |
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications | 454 |
| GaN Power ICs Drive Fast Charger Innovation and Market Adoption | 45 |
| GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter | 132 |
| GaN Power ICs Enable Next Gen Adapters | 144 |
| GaN Power ICs Enable Next-Generation Power Supplies | 62 |
| GaN Power ICs Enables a Revolution in AC-DC Adapters (gallium nitride) | 43 |
| GaN Power ICs Enabling Next-Gen ACF for Adapter/Charger Applications | 72 |
| GaN Power ICs: Device Integration Delivers Application Performance | 99 |
| GaN Power ICs: Integration Drives Performance | 40 |
| GaN Power Integrated Circuits | 92 |
| GaN Reliability Through Integration and Application Relevant Stress Testing | 48 |
| GaN Reliability: Beyond Performance and Efficiency | 77 |
| GaN Technology Enables Fast Electric Charging Systems | 34 |
| GaN-based High Frequency 6.6kW Bi-directional DCDC Converter for OBC Application | 59 |
| GaN-based High Frequency and High-power Density 2-in-1 Bidirectional OBCM Design for EV Application | 255 |
| GaN: Future Direction & Challenges | 34 |
| GaNFast Power IC Modeling (gallium nitride) | 81 |
| GaNFast Power ICs Maximize Transient Voltage Ratings and Boost Circuit Ruggedness | 49 |
| GaNFast Power ICs: Past - Present - Future | 42 |
| GaNFast Power ICs: The Game-Changer | 44 |
| GaNFast: The Power and the Quality | 116 |
| GaNFast™ 20-Year Warranty | 76 |
| GaNFast™ 20-Year Warranty (Chinese) | 39 |
| GaNFast™ and GeneSiC™: Twin Engines Drive the Future of High-Power Applications | 41 |
| GaNFast™ Half-Bridge IC and Applications | 109 |
| GaNSafe - the World\'s Safest GaN Power Semiconductor | 46 |
| GaNSafe Power ICs Create Highest Density and Efficiency in Data Center and EV Power Systems | 55 |
| GaNSafe™ Power ICs Create Highest Density and Efficiency in Data Center & EV Power Systems | 43 |
| GaNSense™ Half-Bridge Integration Accelerates the Power-Electronics Revolution | 169 |
| GaNSense™ Power ICs Enable Next-Gen, Ultra-High-Efficiency and High-Power-Density 140 W, PD3.1 Adapter Designs | 241 |
| GaNSense™ Power ICs Integrate Fast, Autonomous, Precise Protection Circuits for Ultimate System Robustness | 41 |
| GaNSense™ 半桥集成技术加速电力电子技术革命 | 66 |
| GeneSiC high-speed, high-voltage SiC drives high-power innovation | 115 |
| Half-Bridge GaN Power ICs: Performance and Application | 56 |
| Here Come the GaN Chargers (gallium nitride) | 46 |
| High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC | 128 |
| High Power, High Voltage, High Speed: GaN and SiC Electrify Our World™ | 41 |
| High-Density 65W USB-PD GaN Chargers: Market Demand, Technical Solutions and Pricing | 98 |
| High-Density Power for the AI Revolution | 153 |
| High-Frequency 150W PFC-LLC with GaN Power ICs (gallium nitride) | 126 |
| High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CPRS Application Using GaN Power IC | 506 |
| High-Frequency PFC-LLC with GaN Power ICs (gallium nitride) | 80 |
| High-Speed Gen3 Fast GeneSiC MOSFETs Deliver Best-In-Class Performance | 162 |
| High-Voltage SiC Optimized for Megawatt Charging in EV Long-haul Trucking | 75 |
| How the Si to GaN SiC Transition Accelerates Our Journey From Fossil Fuels | 53 |
| Integrated GaN Power Solution and Application (纳微集成氮化镓电源解决方案及应用) (Chinese) | 122 |
| International Women in Engineering Day | 34 |
| Living Well Off the Grid | 38 |
| Make it Easy with GaN Power ICs | 40 |
| Monolithic GaN Device Integration Drives Efficiency | 47 |
| Monolithic GaN Device Integration Drives Efficiency,Density and Reliability in Power Conversion | 52 |
| Monolithic HV GaN Power ICs: Performance and Application | 108 |
| Navitas Delivers AI Server Power: GaN & SiC Hybrid 4.5 kW | 192 |
| Navitas Exhibitor Seminar | 38 |
| Navitas GaNFast™ IC Field Results in High-Volume Production | 141 |
| Navitas GaNSafe™️ and GeneSiC™️ Double Engine Drive Automotive Power Future | 48 |
| Navitas Reliability Test Standards | 34 |
| Navitas Semi (Shanghai) ISO9001 (Chinese) | 44 |
| Navitas Semi (Shanghai) ISO9001 (English) | 31 |
| Navitas Semi US ISO9001 (2015) | 28 |
| New GaNSense Half-Bridge IC Enables Next Gen High-Frequency, High-Efficiency, High-Density Topologies | 247 |
| New-Generation of Trench-Assisted Planar SiC MOSFETs | 71 |
| New-Generation SiC MPS Diodes with low knee voltages | 115 |
| Next-Generation Gallium Nitride Semiconductor Accelerates Carbon Neutrality | 37 |
| Next-generation GaN Isolators / Level-Shifters for High Frequency | 172 |
| Next-Generation GaN power ICs Drive Transformer Revolution | 54 |
| NV6113 | 486 |
| NV6115 | 613 |
| NV6117 | 388 |
| NV6123 | 334 |
| NV6125 | 728 |
| NV6127 | 954 |
| NV6128 | 1330 |
| NV6132A | 192 |
| NV6134A | 260 |
| NV6136A | 229 |
| NV6138A | 244 |
| NV6154 | 446 |
| NV6156 | 564 |
| NV6169 | 325 |
| NV9510x | 1 |
| NV9580x | 3 |
| NV9581x | 2 |
| NV9582x | 2 |
| NV9583x | 3 |
| NV9584x | 2 |
| NV9586x | 2 |
| NV9701x | 1 |
| NV9750x | 1 |
| PCIM 2024 - GaN Wide Bandgap Design the Future of Power (Bodos Panel) | 136 |
| Planet Navitas Showcases Tomorrow’s Sustainable World at CES 2023 | 211 |
| Power Up Virtual Expo: Electrify Our World™ | 39 |
| Pulsed ACF for Low-Profile GaN Fast Chargers | 32 |
| Pure-Play, High-Speed GaNFast and GeneSiC | 142 |
| Pure-Play, Next-Generation Power Semiconductors | 61 |
| RED | 3 |
| Reducing Consumer Electronics’ impact with Gallium Nitride (GaN) Power Semiconductors | 78 |
| Reducing System Cost with GaN FETs in Motor Drive Applications | 87 |
| Reliability and Cost-of-Ownership Optimization in Industrial Power Supplies | 152 |
| Reliability Testing and Qualification of GaNPower Integrated Circuits | 124 |
| SiC and GaN Applications in Electric Vehicles: Current Issues | 61 |
| SiC Delivers Next-Generation Efficiency and Sustainability | 163 |
| SiC-based Bidirectional Three-phase CLLLC Resonant Converter with Integrated Magnetics for High-Power On-Board Charger Applications | 79 |
| Silicon Carbide MPS Diodes Boost Efficiency and Reliability | 52 |
| Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Applications | 607 |
| Something You Want With Navitas GaN - Spigen | 32 |
| Speed Drives Performance | 81 |
| State-of-the-Art Mobile Charging: Topologies, Technologies and Performance | 51 |
| Step Up to Half-Bridge GaN Power ICs | 46 |
| Study of Magnetics Frequency vs. Efficiency Enables a New Class of High-Density PFC/LLC Converters | 113 |
| Successful High-Frequency Applications with SiC | 43 |
| Sustainability Benefits of GaNFast Power ICs | 62 |
| Sustainability Report 2021 | 103 |
| System integration benefits of GaN Power ICs (gallium nitride) | 46 |
| Systematic approach to GaN power IC reliability | 63 |
| Take a Practical Path Toward High-Performance Power Conversion | 34 |
| The Future of Charging is GaNFast! (English) | 41 |
| The Future of Power: High-Frequency Systems Enabled by GaN | 36 |
| The GaN Revolution in Fast Charging & Power Conversion | 125 |
| The Genesis of GeneSiC and the Future of Silicon Carbide | 79 |
| The Past, Present, and Future of Current Sensing | 60 |
| The Power of GaNFast Technology on the OnePlus 10T-5G | 33 |
| The SiC Evolution and GaN Revolution for Electric Vehicles | 109 |
| The Silicon Chip is Dead! | 37 |
| Traction, Charging and Sustainability – Addressing High-Voltage EV Challenges with SiC | 212 |
| TSMC Technology Symposium 2022 | 57 |
| UG002 | 90 |
| UG009 | 9 |
| UG016 | 88 |
| UG018 | 19 |
| UG022 | 83 |
| UG024 | 32 |
| Unlocking the Power of GaN | 109 |
| Variable-Speed Motor Drives Reap Benefits Of Integrated GaN | 160 |
| Vollständig geschützte GaN-Leistungs-ICs sorgen für robuste und kostengünstige Motorantriebe | 46 |
| Welcome to the Post-Silicon World: Wide Bandgap Powers Ahead | 47 |
| Wide Bandgap Power to Electrify Our World for a Sustainable Future | 144 |
| 全面保护型半桥功率IC赋能电机集成逆变器 | 63 |
| 纳微GaNFast：定义快充新未来！(The Future of Charging is GaNFast!) (Chinese) | 45 |
| 纳微GaNsafe™ 驱动超高性能AI服务器电源设计 | 53 |
| 纳微氮化镓市场分享及展望A New Era in Fast Charging: Let’s Go GaNFast! (Chinese) | 45 |
| 采用了GaNSense™技术的NV6169 PQFN 8x8 GaNFast™功率IC，适用于更高功率的应用 | 59 |
| 采用无损电流采样的高集成GaNSense Control和GaN Halfbridge方案 | 59 |
| Document |
Number of downloads |
| 300W Multi-Mode Totem-pole PFCUsing GaN Power ICs | 162 |
| 650V AllGaN™ Power IC for Power Supply Applications (gallium nitride) | 72 |
| A New 650V GaNFast Half Bridge IC for AC/DC Converter Applications (gallium nitride) | 80 |
| A New Era in Fast Charging: Let’s Go GaNFast! (English) | 37 |
| Active Clamp Flyback Using GaN Power IC for Power Adapter Applications | 84 |
| Advancements in GaN Power IC System Integration | 81 |
| Advances in GaN Power ICs: Efficiency, Reliability & Autonomy | 93 |
| Advancing GaN Power ICs: Efficiency, Reliability & Autonomy | 172 |
| Advancing GaN Power Integration: Efficiency, Reliability & Autonomy | 102 |
| AN006: QFN Assembly & Rework | 87 |
| AN010: Thermal Management of GaNFast™ Power ICs | 67 |
| AN011: Thermal Management of NV612x GaNFast Power ICs (gallium nitride) | 80 |
| AN015: New GaNFast™ Power ICs with GaNSense™ Technology Loss-Less Current Sensing & Autonomous Protection | 203 |
| AN015: 具有无损电流检测和自动保护功能的GaNSense™技术的新一代GaNFast™Power ICs | 1296 |
| AN016: NV6169 PQFN 8x8 GaNFast™ Power IC with GaNSense™ Technology for Higher-Power Applications | 797 |
| At the Speed of GaN (gallium nitride) | 45 |
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives | 214 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Architecture, Performance in High-Power Systems | 78 |
| Bodo\'s Wide Bandgap Event: GaNFast™ Power IC Solutions for EV, Solar & Industrial | 71 |
| Bodo’s Panel: The Industry Leader in GaN Power ICs | 64 |
| Breaking Speed Limits with GaN Power ICs | 732 |
| Breaking Speed Limits with GaN PowerICs | 31 |
| Capacitors going GaNFast: Opportunities and Challenges in High-Frequency Power Systems | 473 |
| Chinese Sustainability Report 2021 | 98 |
| CPSSC 2019 GaNFast Charger Update (gallium nitride) (Chinese) | 422 |
| Current Sensing: Past, Present, and Future | 164 |
| Delivering Performance, Let’s Go GaNFast! | 325 |
| Design Considerations of Highly-Efficient Active Clamp Flyback Converter Using GaNFast™ Power ICs | 358 |
| Do We Need to Progress Towards GHz Switching in High Power Systems and Applications? | 338 |
| Driving For Zero Switching Losses | 423 |
| Electrify Our World™ | 56 |
| Electrifying Our World: The Navitas Quality Journey | 479 |
| Electronica South China - Navitas | 76 |
| Fast Forward to the GaN Data Center | 65 |
| From Science Fiction to Industry Fact: GaN Power ICs Enable the New Revolution in Power Electronics | 593 |
| Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives | 63 |
| Gallium Nitride (GaN) Enables Next-Generation High-Frequency Circuits | 74 |
| Gallium Nitride (GaN) Power IC Integration and Application (Chinese) | 3039 |
| Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality | 63 |
| Gallium Nitride: Catalyst for the Next Generation of Power | 55 |
| GaN Adoption, Market-by-Market | 58 |
| GaN Drives Development of Next-Generation EVs | 332 |
| GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies | 102 |
| GaN High Density 300W AC-DC Converter | 14312 |
| GaN ICs Drive Sustainability and Deliver CarbonNeutral Status | 104 |
| GaN ICs Simplify Designs, Improve Performance and Boost Robustness & Reliability | 118 |
| GaN Integration Drives Next-Generation Power Systems | 99 |
| GaN Matures for Industry with Monolithic Power ICs | 264 |
| GaN Power IC Adoption Takes Off in Fast Charging Market (gallium nitride) | 456 |
| GaN Power IC Enable 4x Power Density 150W AC/DC Converter Design | 306 |
| GaN Power IC Technology: Past, Present & Future | 668 |
| GaN Power ICs and the High-Frequency Eco-System (gallium nitride) | 265 |
| GaN Power ICs at 1 MHz+:Topologies, Technologies and Performance | 390 |
| GaN Power ICs deliver breakthrough system performance with confident project costs and schedules | 229 |
| GaN Power ICs Drive Fast Charger Innovation and Market Adoption | 127 |
| GaN Power ICs Enable Next Gen Adapters | 300 |
| GaN Power ICs Enable Next-Generation Power Supplies | 468 |
| GaN Power ICs Enables a Revolution in AC-DC Adapters (gallium nitride) | 314 |
| GaN Power ICs Enabling Next-Gen ACF for Adapter/Charger Applications | 602 |
| GaN Power ICs: Device Integration Delivers Application Performance | 506 |
| GaN Power ICs: Integration Drives Performance | 323 |
| GaN Power Integrated Circuits | 409 |
| GaN Reliability Through Integration and Application Relevant Stress Testing | 442 |
| GaN Reliability: Beyond Performance and Efficiency | 152 |
| GaN Technology Enables Fast Electric Charging Systems | 44 |
| GaN: Future Direction & Challenges | 72 |
| GaNFast Power IC Modeling (gallium nitride) | 428 |
| GaNFast Power ICs Maximize Transient Voltage Ratings and Boost Circuit Ruggedness | 95 |
| GaNFast Power ICs: Past - Present - Future | 43 |
| GaNFast Power ICs: The Game-Changer | 77 |
| GaNFast™ 20-Year Warranty | 107 |
| GaNFast™ 20-Year Warranty (Chinese) | 75 |
| GaNFast™ and GeneSiC™: Twin Engines Drive the Future of High-Power Applications | 90 |
| GaNFast™ Half-Bridge IC and Applications | 180 |
| GaNSense™ Half-Bridge Integration Accelerates the Power-Electronics Revolution | 200 |
| GaNSense™ 半桥集成技术加速电力电子技术革命 | 162 |
| Half-Bridge GaN Power ICs: Performance and Application | 64 |
| Here Come the GaN Chargers (gallium nitride) | 64 |
| High-Density 65W USB-PD GaN Chargers: Market Demand, Technical Solutions and Pricing | 606 |
| High-Frequency 150W PFC-LLC with GaN Power ICs (gallium nitride) | 559 |
| High-Frequency PFC-LLC with GaN Power ICs (gallium nitride) | 575 |
| Integrated GaN Power Solution and Application (纳微集成氮化镓电源解决方案及应用) (Chinese) | 611 |
| International Women in Engineering Day | 58 |
| Make it Easy with GaN Power ICs | 45 |
| Monolithic GaN Device Integration Drives Efficiency | 306 |
| Monolithic GaN Device Integration Drives Efficiency,Density and Reliability in Power Conversion | 381 |
| Monolithic HV GaN Power ICs: Performance and Application | 55 |
| Navitas Exhibitor Seminar | 48 |
| Navitas Reliability Test Standards | 421 |
| Next-Generation Gallium Nitride Semiconductor Accelerates Carbon Neutrality | 49 |
| Next-generation GaN Isolators / Level-Shifters for High Frequency | 745 |
| NV6113 | 2667 |
| NV6115 | 3573 |
| NV6117 | 4652 |
| NV6123 | 1200 |
| NV6125 | 4717 |
| NV6127 | 4141 |
| NV6128 | 19380 |
| NV6132A | 453 |
| NV6134A | 1603 |
| NV6136A | 3244 |
| NV6138A | 580 |
| NV613xA-Reliability | 1 |
| NV6154 | 327 |
| NV6156 | 416 |
| Power Up Virtual Expo: Electrify Our World™ | 64 |
| Pulsed ACF for Low-Profile GaN Fast Chargers | 83 |
| Pure-Play, Next-Generation Power Semiconductors | 118 |
| RED | 18 |
| Reducing Consumer Electronics’ impact with Gallium Nitride (GaN) Power Semiconductors | 85 |
| Reliability Testing and Qualification of GaNPower Integrated Circuits | 409 |
| SiC and GaN Applications in Electric Vehicles: Current Issues | 353 |
| Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Applications | 325 |
| Speed Drives Performance | 269 |
| State-of-the-Art Mobile Charging: Topologies, Technologies and Performance | 502 |
| Step Up to Half-Bridge GaN Power ICs | 56 |
| Study of Magnetics Frequency vs. Efficiency Enables a New Class of High-Density PFC/LLC Converters | 358 |
| Sustainability Report 2021 | 41 |
| System integration benefits of GaN Power ICs (gallium nitride) | 267 |
| Systematic approach to GaN power IC reliability | 621 |
| Take a Practical Path Toward High-Performance Power Conversion | 50 |
| The Future of Charging is GaNFast! (English) | 96 |
| The Future of Power: High-Frequency Systems Enabled by GaN | 47 |
| The GaN Revolution in Fast Charging & Power Conversion | 56 |
| TSMC Technology Symposium 2022 | 84 |
| UG002 | 563 |
| UG009 | 462 |
| UG016 | 710 |
| UG018 | 1147 |
| UG019 | 1 |
| UG022 | 989 |
| UG023 | 1 |
| UG024 | 1225 |
| Unlocking the Power of GaN | 292 |
| Vollständig geschützte GaN-Leistungs-ICs sorgen für robuste und kostengünstige Motorantriebe | 41 |
| Welcome to the Post-Silicon World: Wide Bandgap Powers Ahead | 546 |
| 纳微GaNFast：定义快充新未来！(The Future of Charging is GaNFast!) (Chinese) | 68 |
| 纳微氮化镓市场分享及展望A New Era in Fast Charging: Let’s Go GaNFast! (Chinese) | 77 |
| 采用了GaNSense™技术的NV6169 PQFN 8x8 GaNFast™功率IC，适用于更高功率的应用 | 135 |
