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Electronica EU 2022
Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets.
GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.
Navitas goes Pure-Play Next-Gen Power Semis at Electronica 2022 to ‘Electrify Our World™’
Join us at Electronica Europe (Nov 15-18th, Munich, Germany) in Hall B4 / 126, to discover high-speed GaNFast™ and GeneSiC™ technologies, including our new GaNSense half-bridge IC family and SiC MOSFETs up to 6.5kV with trench-assisted planar technology and monolithically integrated Schottky diode. With applications from 20W to 20MW, we’ll showcase our latest 400W motor-drive solution using GaNSense Half-bridge ICs offering an extremely compact solution, 2.7kW CRPS using GaNFast ICs achieving Titanium level of efficiency, and compare our GeneSiC MOSFETs against competition, with 30% energy savings, 25°C cooler operation and 3x longer life. Book your meeting with Navitas at Electronica today!
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