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Experience Next-Generation GaNFast Technology

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APEC 2021 Virtual
Navitas Semiconductor announced that the company will showcase GaN power ICs, the leading, next-gene...
Navitas Semiconductor Analyst Day
Navitas Semiconductor Analyst Day, June 22nd 2021 at NASDAQ San Francisco. Presentation on gallium n...

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November 7 - November 9

Dan Kinzer, Chief Technical Officer and Co-Founder will be hosting a keynote session at IEEE WiPDA 2021.The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Keynote Session: Advances in GaN Power ICs: Efficiency, Reliability & Autonomy

GaNFast™ power ICs, use next-generation gallium nitride (GaN) to replace legacy silicon chips to enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and EVs, replacing silicon in a market worth over $13B by 2026.

Now, a next-generation enables even higher efficiency, autonomy and reliability with precision sensing of system current, voltage and temperature and real-time control and protection.
External monitoring components – such as large, lossy sense resistors – are eliminated, reducing system power loss, reducing complexity and reducing cost.

This new GaNFast generation is a core element as we “Electrify Our World™” and accelerate the conversion away from fossil fuel sources and loads. As well as enabling efficiency improvements that reduce the carbon emissions of target applications, small die-size, fewer manufacturing process steps and integrated functionality mean that GaNFast power ICs have up to 10x lower CO2 footprint than silicon-based solutions, and save 4 kg CO2 per IC shipped, vs. equivalent legacy silicon chips.


November 7
November 9
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