GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component count and footprint by over 60% compared to existing discretes, which cuts system cost, size, weight, and complexity. The integrated GaNSense technology enables unprecedented autonomous protection for increased reliability & robustness, combined with loss-less current sensing for higher levels of efficiency and energy savings.
The initial family of GaNSense Half-Bridge ICs includes the NV6247 which is rated at 650V, 160 mOhms (dual), and the NV6245C, rated at 275 mOhms (dual), both in an industry-standard, low-profile, low-inductance, 6 x 8 mm PQFN package. The NV6247 is immediately available in production with 16-week lead times.
