“Navitas has monolithically integrated drive, control and protection features in its e-mode GaN HEMT device. This approach, with reduced parasitics and fewer external components, allows GaN to be used at its full, high-speed potential with superior switching control.
Figure 2 depicts the improved waveforms of the integrated GaNSense half-bridge IC, which includes gate drivers; built-in protection for overvoltage, overtemperature and overcurrent; current sensing; and 2-kV ESD protection on the pins. The company plans to take this concept further by integrating a low-voltage silicon controller with the GaNSense die.”
