PSD: GaNFast Power ICs maximize transient voltage ratings and boost circuit ruggedness

Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and the absorption of the transient or surge energy by the switch itself.

GaNFast Power ICs do not have this avalanche breakdown effect so they can withstand higher transient voltage spikes and ride-through transient conditions without absorbing any of the surge energy.

Article written by: Tom Ribarich, Sr. Director Strategic Marketing, Navitas Semiconductor