In 2022 Navitas Semiconductor acquired GeneSiC Semiconductor, creating the industry’s only pure-play, next-generation power semiconductor company, focused wholly on SiC and GaN. Dr Ranbir Singh, who founded GeneSiC in 2004 and is now Navitas’ Executive Vice-President of SiC, has a rich history in SiC power technology, beginning with his research into the first SiC power devices at North Carolina University (NCSU). In 2022, to mark this pioneering work, Dr. Singh was inducted into the NCSU Electrical and Computer Engineering (ECE) Alumni Hall of Fame.
With the industry’s broadest voltage range – stretching from 650 V to 6.5 kV – GeneSiC MOSFETs and Schottky MPS™ diodes have been at the forefront of SiC technology. The company has been involved with over 60 government-agency projects, pushing the boundaries of SiC performance, ruggedness and reliability. These include the development of 6.5 kV SiC thyristors for energy-storage, grid-tied inverters for the Department of Energy (DoE); 15 kV MOSFET and PiN Diodes for defense applications; 500°C monolithically-integrated SiC super-junction transistor-JBS diode (MIDSJT) for NASA’s Venus exploration missions, and monolithically-integrated, radiationhardened SiC gate drivers for 1200 V SiC DMOSFETs and 6.5 kV SiC thyristors, for the US Navy.
This article was written by Llew Vaughan-Edmunds, Senior Director Product Marketing – SiC, and was featured in Bodo’s Power Magazine, July 2023 edition.