Navitas Semiconductor - World's First & Fastest GaN Power IC
Navitas Semiconductor - World's First & Fastest GaN Power IC

APEC 2026: Navitas CEO Weighs In On the Future of AI Power

“Power Electronics News (PEN) Editor-in-Chief, Aalyia Shaukat, interviews Navitas CEO, Chris Allexandre, during APEC 2026 in San Antonio, Texas.

The discussion centers around the company’s latest GaN and SiC innovations targeting AI data centers and energy infrastructure. Allexandre discusses the fifth-generation GeneSiC trench-assisted planar (TAP) technology, which delivers a 35% improvement in the figure of merit, along with enhanced gate-oxide reliability and robustness.

The conversation covers Navitas’s expanding DC-to-DC platform portfolio—including the all-GaN 800 V-to-50 V and 800 V-to-6 V power delivery boards developed in collaboration with Nvidia—and the company’s 250 kW solid-state transformer demonstrator built in partnership with EPFL using SiCPAK modules.

Allexandre also outlines Navitas’s strategic pivot toward four high-power markets—AI data centers, green infrastructure, performance computing, and industrial electrification—and the role both GaN and SiC technologies will play in enabling the next generation of power architecture.”