SiCPAK™ – Unparalleled Reliability & Efficient
High-Temperature Performance
SiCPAK™ – Unparalleled Reliability & Efficient High-Temperature Performance
Navitas’ SiCPAK™ SiC power modules with epoxy-resin potting technology powered by Navitas’ GeneSiC™ trench-assisted planar technology have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance.
SiCPAK™ F Series
SiCPAK™ G Series
| High Endurance: Epoxy-Resin Potting Technology |
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| • >10x improvement in temperature cycling reliability
• Superior stability in power module thermal resistance • Protected against humidity ingression in harsh environments |
| Efficient Performance: Trench-Assisted Planar Technology |
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| • Up to 20% lower on-resistance at elevated temperatures • Up to 15% lower switching losses • Unparalleled SiC reliability under high-temperature, high-humidity, high-voltage, and high dV/dt conditions |
| Applications |
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| • EV DC Fast Charger (DCFC) • Industrial Motor Drive • Uninterrupted Power Supply (UPS) • Solar Inverter and Power Optimizer • Energy Storage System (ESS) • Industrial Welding • Induction Heating |
Silicone-Gel Potting
Problem: Temperature cycling
• Extension and bending of DBC with temperature variation, causing conchoidal fractures
Problem: Humidity ingression
• Silicone-gel absorbs moisture and contaminants from the environment, leading to short circuit and/or reliability failures
Epoxy-Resin Potting
Reduces expansion stresses due to higher thermal conductivity
• Epoxy-resin provides 10x higher thermal conductivity over silicone-gel to enable improved heat spreading
Limits extension and bending of overall structure
• Epoxy-resin limits extension and bending of DBC to reduce conchoidal fractures
Prevents humidity ingression
• Epoxy-resin prevents absorption of moisture and contaminants from the environment into the module potting
Unparalleled Reliability
Navitas’ SiCPAK™ power modules with epoxy-resin potting technology dramatically reduce conchoidal fractures in the DBC, leading to stable thermal resistance and isolation-withstand capability.
Efficient High-Temperature Performance
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ trench-assisted planar technology provides industry-leading performance over temperature, delivering lower losses, cooler-operation, and superior robustness to support long-term system reliability.
Portfolio
One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs.
| Part # | Voltage (V) | RDS(ON) per switch @ 18V (mΩ) | Topology | Package |
|---|---|---|---|---|
| G3F09MT12FB2(-T) | 1200 | 9.3 | Half-Bridge | SiCPAK F (33.8mm x 65mm) |
| G3F17MT12FB2(-T) | 17.0 | |||
| G3F18MT12FB4(-T) | 18.5 | Full-Bridge | ||
| G3F05MT12GB2(-T) | 4.6 | Half-Bridge | SiCPAK G (56.7mm x 65mm) |
|
| G3F09MT12GB4(-T) | 9.3 | Full-Bridge | ||
| G3F09MT12G3T(-T) | 9.3 | 3L-T-NPC |
*(-T) Thermal Interface Material Option