High Power 
: The World’s Safest GaN
High Power : The World’s Safest GaN
The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centers,
solar/energy storage, and industrial markets. Navitas 4th generation integrates control, drive, sensing, and critical
protection features that enable unprecedented reliability and robustness.
• High-speed short-circuit protection, with autonomous ‘detect and protect’ with ultra-fast 350 ns / 50 ns latency.
• Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability
• Electrostatic discharge (ESD) protection of 2 kV
• 650 V continuous, 800 V transient voltage capability for extraordinary conditions.
• Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)
• Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI requirements.
• Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional VCC pin
TOLL
TOLT
Short-circuit current test
Double-pulse’ test
(400 V, 30 A, RSERIES = 11 mΩ)
GaN discrete 650 V, 42 mΩ max Spikes, tON ringing & 250 V undershoot
GaNSafe 650 V, 45 mΩ max (NV6513) Smooth, safe, reliable operation
Broad portfolio with top- and bottom-cooled options addresses topologies from 1 kW to 100 kW+. Application-specific features
increase efficiency, power density and reliability, and reduce component count and system cost.
*(-T) Thermal Interface Material Option