APEC 2022 IS14 Ribarich – GaN Half-Bridge ICs

GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies

Tom Ribarich, Sr. Dir. Strategic Marketing,
Navitas Semiconductor,
tom.ribarich@navitassemi.com

Presentation Outline

• Mid-power charger examples
• Mid-power circuit topologies
• AHB circuit topology
• USB-C PD Mid-power Multi-port block diagram
• 650V GaN Half-Bridge IC
• 140W-1C TTP + AHB charger

Apple 96W-1C (185cc)

• Topology = PFC + QR Flyback
• Cased Size = 80 x 80 x 29mm = 185cc
• Power Density = 0.52 W/cc
• Frequency = 80 kHz 3 of 16
• Efficiency = 92% @ 90VAC/100%

Lenovo YOGA 130W-2C (155cc)

• Topology = PFC + LLC Sync Rect
• Cased Size = 71 x 71.5 x 30.5mm = 155cc
• Power Density = 0.84 W/cc
• Frequency = 160 kHz
• Efficiency = 92.5% @ 90VAC/100%

Mid-Power Circuit Topologies

Size & Efficiency Matter

TTP = Totem Pole PFC

AHB = Asymmetric Half Bridge

USB-C PD Mid-Power Multi-Port Block Diagram

PWM Signal In, GaN Half-Bridge Out

GaN Half-Bridge IC = Smallest PCB Area, Fewest Components, No Ringing, No Glitching

140W-1C TTP+AHB = 130cc, 1.1W/cc

TTP Waveforms CRM Operation

Clean & Smooth AHB Resonant ZVS Switching

Highest Efficiency = Lowest Losses = Smallest Size