Awards
Navitas GaNSense™ Half-Bridge Power ICs Win Power Product of the Year
Proprietary GaN-IC technology integrates two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation to create a fundamental power-stage building block for power electronics Torrance, CA – January 31st, 2023 - Navitas Semiconductor...
Navitas Ranked 75th Fastest-Growing Company in North America on the 2022 Deloitte Technology Fast 500™
Three-year revenue growth of 2,300% for next-generation integrated gallium nitride (GaN) ICs that drive up to 3x more power, or 3x faster charging in half the size and weight vs. legacy silicon chips Torrance, CA., November 16th, 2022—Navitas Semiconductor (Nasdaq:...
Navitas GaNSense™ Half-Bridge Power ICs ‘Best-in-Show’ at electronica 2022
Embedded Computing Design awards Navitas for design excellence and market impact at world’s largest power electronics trade fair Torrance, CA., November 15th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...
Navitas’ EVP Ranbir Singh, Silicon Carbide Pioneer, Inducted into Engineering Hall of Fame
Founder of GeneSiC Semiconductor receives prestigious honor from NCSU, home of US SiC Research El Segundo, CA – October 24th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, announced that Dr. Ranbir Singh,...
Navitas Recognized as Industry-Leading Sustainability Company
“Electrify Our World™” mission recognized in ESG Investing’s ‘Best Sustainability’ and ‘Best Climate-Related’ categories El Segundo, CA – October 3rd, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power...
Navitas and Anker Celebrate CES Innovation Awards with 100W GaNFast™ Charger
Navitas and Anker partnership delivers double CES wins, maximum portability, fast charging and convenience El Segundo, CA, USA – June 16th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits, has...
Navitas: World’s First CarbonNeutral®-Certified Semiconductor Company
Advances mission to “Electrify Our World™” as each next-gen GaN power IC saves 4 kg CO2 El Segundo, CA – May 27th, 2022, Navitas Semiconductor, industry-leader in GaN power ICs, announced that it is the world’s first semiconductor company to achieve...
Navitas Semiconductor Honored at CES 2022 Innovation Awards
GaN power ICs replace legacy silicon chips to enable world’s smallest, fastest mobile chargers El Segundo, CA – November 19th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) has announced that...
Navitas Described as “The Power and the Glory” of Top Tech Companies to Watch
Prestigious EETimes ‘Silicon 100’ ranking recognizes gallium nitride (GaN) as key next-generation power technolog DUBLIN, IRELAND --(PRWeb)— Navitas Semiconductor , the industry leader in gallium nitride (GaN) power ICs, announced its selection to the prestigious 2021...
Navitas Semiconductor Wins Prestige “Power Product of the Year” Award
Gallium nitride (GaN) continues to ramp into $20B silicon chip market DUBLIN, Ireland -- (PRWeb) Navitas Semiconductor today announced they have been awarded ASPENCORE’s Electronic Products’ “Power Product of the Year” 2020. Navitas’ GaN Power IC NV612x series was...
Navitas Wins Prestigious “Semiconductor Design Innovation Excellence Award” at SemiExpo 2020
Big audience for the live debut of the ‘Little Star GaN’ twins! DUBLIN, Ireland -- (PRWeb) Navitas Semiconductor today announced it had been recognized with the “Semiconductor Design Innovation Excellence Award” (年度半导体材料设计卓越创新奖) by the China Communication Industry...
Navitas Semiconductor: Outstanding Innovative Company of the Year 2020
Gallium Nitride Triumphs at Prestigious ASPENCORE "Double Summits" World Electronics Achievements Awards DUBLIN, Ireland -- (PRWeb) Navitas Semiconductor today announced it had been recognized for with the “Outstanding Innovative Company of the Year” award by...
