Navitas to present ‘GeneSiC: Pioneers of Silicon Carbide Power Devices’. For almost 20 years, GeneSiC has pioneered high-performance, robust, and reliable SiC power devices for EV, industrial automation, solar, wind, grid, motor drives, and defense. From 650 V to 6.5 kV, GeneSiC MOSFETs and Schottky MPS™ diodes have been at the forefront of SiC technology, focused on performance, ruggedness, and reliability. MOSFET technologies include ‘trench-assisted planar gate’ and ‘monolithically integrated MPS diode’.