Navitas Semiconductor - World's First & Fastest GaN Power IC
Navitas Semiconductor - World's First & Fastest GaN Power IC
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Upcoming Events

All Day

China Renaissance Investor Conference

Virtual

Join the China Renaissance Virtual Investor Conference Navitas Semiconductor to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Click the PDF below to view the presentation.

Electronica South China, International Leading Technology Forum on Electric Propulsion and Charging of EV

Shenzhen World Exhibition & Convention Center 福海街道展城路1号 邮政编码, Shenzhen

Dong LIN, Navitas’ Sr. Director of Applications will be speaking about "GaN Power ICs Accelerate Adoption of EV” during the “International Leading Technology Forum on Electric Propulsion and Charging of EV” as part of Electronica South China 2021. Electronica South China is an innovation platform for the electronics industry and brings leading enterprises, top buyers and professionals from China and abroad together to create more business opportunities. This year Electronica South China is focusing on cutting-edge technologies and applications such as 5G, Internet of Things, Bluetooth, automobiles, industrial electronics, wearables, consumer electronics, and smart home.

EarthShift Global, “Reducing Consumer Electronics’ Impacts with Gallium Nitride Semiconductors in Place of Silicon”

Free Webinar

Gallium Nitride (GaN) is a next-generation semiconductor material with characteristics that make it an excellent candidate for use in the devices used to charge mobile devices and other consumer electronics. GaN delivers more efficient AC/DC power conversion compared to traditional silicon devices, which reduces wasted energy during charging, while also significantly reducing the size and weight of the charger, decreasing life cycle environmental impacts. This presentation will be of special interest to practitioners working with consumer electronics or interested in broader electrical efficiency benefits across applications including solar energy generation, electric vehicle, and datacenter energy use. Click the PDF below to view the presentation.