Baird 52nd Annual Global Industrial Conference In-Person
Join Navitas Semiconductor at Baird’s 52nd annual Global Industrial Conference in-person on, November 8 – November 10, 2022, in Chicago, Illinois. More information to follow.
Read more »Join Navitas Semiconductor at Baird’s 52nd annual Global Industrial Conference in-person on, November 8 – November 10, 2022, in Chicago, Illinois. More information to follow.
Read more »
This year, the 6th User Forum for Power Semiconductors will finally offer speakers, exhibitors and sponsors the opportunity to present themselves live, and visitors will once again have the long-missed opportunity for intensive personal exchange at the event.
Read more »
Earnings Webcast Navitas will hold a public webcast today at 2:00 p.m. Pacific / 5:00 p.m. Eastern to discuss third quarter results. Toll Free Dial-in: (646) 307-1963 or (800) 715-9871 Conference ID: 5290893 Live Webcast: https://edge.media-server.com/mmc/p/9vb5pmng Replay: A replay of the call will be accessible from the Investor Relations section of the Company’s website at https://ir.navitassemi.com/. For more information see the Press Release here: https://navitassemi.com/navitas-semiconductor-announces-third-quarter-2022-financial-results/
Read more »
Navitas goes Pure-Play Next-Gen Power Semis at Electronica 2022 to ‘Electrify Our World™’ Join us at Electronica Europe (Nov 15-18th, Munich, Germany) in Hall B4 / 126, to discover high-speed GaNFast™ and GeneSiC™ technologies, including our new GaNSense half-bridge IC family and SiC MOSFETs up to 6.5kV with trench-assisted planar technology and monolithically integrated Schottky diode. With applications from 20W to 20MW, we’ll showcase our latest 400W motor-drive solution using GaNSense Half-bridge ICs offering an extremely compact solution, 2.7kW CRPS using GaNFast ICs achieving Titanium level of efficiency, and compare our GeneSiC MOSFETs against competition, with 30% energy savings, 25°C cooler operation and 3x longer life. Book your meeting with Navitas at Electronica today! For customers meetings, click here. For investors meetings, click here.
Read more »
Join Lin Dong, Senior Applications Director, Navitas Semiconductor, at Electronica South China 2022 as he discusses Pure-Play GaN+SiC: Electrify our World from 20 W to 20 MW. Lin Dong's speech will begin on Nov. 15, 2022 at 13:30-14:00 (CST - China Standard Time)
Read more »
November 29th, 2022, with ‘fire-side chat’ at 10:40am Pacific, and series of 1x1 meetings. Navitas attendee: Gene Sheridan, CEO and co-founder. To register, click here. To listen to the live fire-side chat, click here. A recording will be available via navitassemi.com/events/.
Read more »
The Annual Expert Meeting for SiC, GaN, and Related Topics Wide bandgap materials, especially Silicon Carbide for high power applications and Gallium Nitride for lower power classes, are the future of energy conversion designs. They help increase efficiency in today's and tomorrow's key technologies such as renewable energy, automotive, electric drives, industrial and consumer applications. But no design is complete without the right Passive Components and Magnetics. And on the way to the final design, you will need a lot of Test, Measurement and Simulation, that's for sure. We will cover these two related topics on two dedicated days as well! The four-day event is packed with highly technical presentation from companies of all kinds, global industry leaders to emerging start-ups. Live Q&A-discussions will round off the program. I had to make the tough decision to go virtual again this year due to the uncertainty around Covid and the risk of upcoming restrictions in the fall/winter season. Let’s stay safe and keep it on the screen one more time!
Read more »
Anchored on presentations, fireside chats, and one-on-one meetings, the conference will feature a variety of TMT companies. The presenting speakers will include senior leadership from multiple TMT segments including, but not limited to, Software, Semiconductors, IT Hardware, Internet, Media and Telecommunications. Navitas attendees: Ron Shelton, CFO, and Stephen Oliver, VP Corp. Mktg & IR.
Read more »
In-person schedule: Wednesday December 7th from 1:30pm-4pm Taiwan time 1:30-2:15pm - Presentation by Navitas CEO and co-founder, Gene Sheridan 2:15-2:35pm - Fireside Chat: Gene Sheridan and Edward Chyau 2:35-2:55pm - Q&A 2:55-4:00pm - Networking For event related questions, please email [email protected]
Read more »
CES® is the most influential tech event in the world — the proving ground for breakthrough technologies and global innovators. This is where the world's biggest brands do business and meet new partners, and the sharpest innovators hit the stage. Owned and produced by the Consumer Technology Association (CTA)®, CES features every aspect of the tech sector. For more info, please view our Press Release here.
Read more »
Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include mobile, consumer, data center, EV, solar, wind, smart grid, and industrial. Over 185 Navitas patents are issued or pending. Over 65 million GaN units have been shipped with zero reported GaN field failures, and Navitas introduced the industry’s first and only 20-year warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.
Read more »
Navitas to present 'GeneSiC: Pioneers of Silicon Carbide Power Devices'. For almost 20 years, GeneSiC has pioneered high-performance, robust, and reliable SiC power devices for EV, industrial automation, solar, wind, grid, motor drives, and defense. From 650 V to 6.5 kV, GeneSiC MOSFETs and Schottky MPS™ diodes have been at the forefront of SiC technology, focused on performance, ruggedness, and reliability. MOSFET technologies include 'trench-assisted planar gate' and 'monolithically integrated MPS diode'.
Read more »