Join Navitas and fellow experts from the field of Wide Bandgap Power Semiconductors, as we share the latest trends and achievements in this evolving technology. For the second year, this event will be totally virtual, due to the uncertainty around the pandemic and the possible travel restrictions we still see in many parts of the world. More information to follow.
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The Annual Expert Meeting for SiC, GaN, and Related Topics Wide bandgap materials, especially Silicon Carbide for high power applications and Gallium Nitride for lower power classes, are the future of energy conversion designs. They help increase efficiency in today's and tomorrow's key technologies such as renewable energy, automotive, electric drives, industrial and consumer applications. But no design is complete without the right Passive Components and Magnetics. And on the way to the final design, you will need a lot of Test, Measurement and Simulation, that's for sure. We will cover these two related topics on two dedicated days as well! The four-day event is packed with highly technical presentation from companies of all kinds, global industry leaders to emerging start-ups. Live Q&A-discussions will round off the program. I had to make the tough decision to go virtual again this year due to the uncertainty around Covid and the risk of upcoming restrictions in the fall/winter season. Let’s stay safe and keep it on the screen one more time!
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Bodo's Wide Bandgap is bringing together innovators and industry experts from around the world to discuss the potential of wide bandgap power semiconductors. This conference serves as a pivotal platform for knowledge exchange, collaboration, and discovery in this rapidly evolving field. Presenters: Alfred Hesener, GaN Power IC Innovations For High-Frequency, High-Power Industrial Motor Drive 09:00 CET Ranbir Singh, High-speed Gen-3F GeneSiC Delivers Best-in-Class Efficiency from 300 – 800 kHz 10:15 CET
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Bodo's WBG Event brings together innovators and industry experts from around the world to discuss the potential of wide bandgap power semiconductors. This conference serves as a pivotal platform for knowledge exchange, collaboration, and discovery in this rapidly evolving field. Click the PDFs below to view the presentations: GaN & SiC Technologies Enable Next-Gen AI Data Centers Driving Electric Motors with GaN Power ICs Bi-Directional GaNFast™ Switches Open Doors for New High-Performance Topologies
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Presentations: Llew Vaughan-Edmunds “Bodo's WBG - Opening Roundtable” December 2nd 4:00 PM ~ 5:30 PM CET Llew Vaughan-Edmunds “High-Power GaN ICs & FETs Enable Efficiency and Power Density Requirements in Next Gen 800V AI Data Centers” December 3rd 11:45 AM - 12:00 PM CET Sascha Dern “Performance and Reliability Gains in MVHV SiC Using Advanced Power Devices and Packaging Technologies” December 3rd 2:30 PM - 2:45 PM CET
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