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Experience Next-Generation GaNFast Technology

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Nov
28
6th Annual Wells Fargo TMT Summit
November 29th, 2022, with ‘fire-side chat’ at 10:40am Pacific, and series of 1×1 meetings. ...
Nov
15
Electronica South China 2022
Join Lin Dong, Senior Applications Director, Navitas Semiconductor, at Electronica South China 2022 ...

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Credit Suisse: Gallium Nitride (GaN) CEO Call

June 13 - June 14

CEO, Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 13th, 10:00am EDT.

GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

Online replay (until Monday 20th June 2022): Click on the following link and enter the access code: 267952, https://ige.netroadshow.com/replay/7947/navitas-semiconductor-expert-call/

Venue

Virtual