PCIM 2026

Navitas will be exhibiting at PCIM Europe 2026 from June 9–11, 2026, in Nuremberg, Germany.

Visit us at the Nürnberg Messe, Hall 9, Booth #544 to learn more about our SiC and GaN products, solutions, and industry applications across AI data center, grid and energy infrastructure, performance computing, and industrial electrification.

Products:
• Ultra-high voltage (UHV)  3300 V and 2300 V press-fit modules with epoxy–resin potting technology, along with high-voltage 1200 V solutions based on the latest Trench Assisted planar (TAP)architecture Silicon Carbide in SiCPAK™ power modules.

• 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP.

• New bare die products called Known Good Die (KGD) on 3300 V, 2300 V, 1700 V, and 1200 V technology nodes for customizable power modules for grid and energy infrastructure applications.

• GaNFast™ Gallium Nitride FETs, starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V in industry leading packages.

• GaNSafe™ GaN ICs for specifically demanding, high-power applications, such as AI data centers, and industrial electrification. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness.

• Bi-directional GaN for single-stage conversion, enabling the transition from two-stage to single-stage topologies, to provide the highest efficiency, power density, and performance, while reducing system cost and complexity.

• GaNSlim™ Control ICs for auxiliary PSUs for data centers and high-performance computing, based on Navitas GaNFast Gallium Nitride technology, offering the highest level of integration and thermal performance.

Solutions:

Grid and Energy Solutions:
• For solid-state transformers (SST) application requiring ultra-high-efficiency from medium voltage grid, that is, 13.8 kV_AC– 34.5 kV_ACto 800 VDC targeting AI data centers and grid and energy infrastructure segments.

• Evaluation boards that allow easy and quick dynamic characterization of our UHV SiCPAK rated at 3300 V and 2300 V will be showcased.

AI Data Center Solutions:
• 20 kW 800 V-to-6 V GaN based power delivery board aiming 97.5% peak efficiency, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency, reliability, cost-effectiveness, and power density.

• The all-GaN 10 kW 800 V–to–50 V DC-DC platform that employs advanced 650 V, NV6066,in TOLT package and 100 V, NVG011C10LC GaNFast FETs in a three-level half-bridge architecture with synchronous rectification delivering 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and supports + / – 400 VDC standard as well.

• 12 kW AI data center power supply, which leverages IntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance for OCP PSU. Designed for production, this power supply achieves 97.8% efficiency for high-power-density hyperscale AI data centers, enabled by GaNSafe ICs and GeneSiC™ MOSFETs.

• World’s first 8.5 kW AI data center OCP PSU, achieving 98% efficiency for AI and hyperscale data centers using GaNSafe ICs and GeneSiC™ MOSFETs.

• High power density 4.5 kW AI CRPS PSU leveraging GaNSafe devices and GeneSiC™ MOSFETs in the smallest power-supply form factor for the latest AI GPUs, which demand 3× more power per rack – enabling the high power density at 137 W/in³ with over 97% efficiency.

 Industrial Electrification Solutions:
• 400 W – 1 kW motor drive boards using GaNSense™, Navitas GaN technology, Motor Drive ICs with integrated power stage,delivering industry-leading performance, efficiency, and robustness for industrial applications.

• 45W Auxiliary SMPS based on 1.7 kV GeneSiC SiC technology.

• 300 W ultra compact and highly efficient SMPS solutions using GaNFast power devices for the next-generation of AI computers, significantly reducing weight and thermal management requirements.

• 500W Solar micro inverter based on GaN BDS, NV6428.

• GaN Bi-directional switch eval board NVE107C using NV6427 in a half-bridge configuration, driven by Navitas NV1702 IsoFast gate drivers.

Featured Partner Solutions:
• A 250KW DC-DC converter with an output of 950V_DCat 480A, and can be paralleled to achieve megawatt power capability, developed by one of our key partners, Brightloop, will also be on display.

• An EPFL-developed full SST cell integrating the primary converter stage, transformer, and secondary conversion stage using a novel single-stage topology, leveraging Navitas 3300 V and 1200 V SiC technology.

• 50KVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers.

Panel and Presentations:
Tuesday, June 9th | 1:25 -2:25  PM CET 
Componeers Panel Session: Automotive, AI, Humanoid Robots – the future of GaN
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit

Wednesday, June 10 | 11:45 am – 12:45 pm CET
Power Electronics News Panel Session: The Evolution in Data Center Power Distribution
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit

Wednesday, June 10th | 2:30 – 3:30 PM CET
Bodo’s Panel Session: “Riding the SiC Wave Efficiently”
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Paul Wheeler, VP & GM, High Voltage SiC Business Unit

Thursday, June 11th | 11:45 AM – 12:45 PM (CET)
Bodo’s Panel Session:  “What’s up, what’s next for GaN?”
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit

Exposition hours are:
• Tuesday, June 9 (9:00 AM – 5:00 PM)
• Wednesday, June 10 (9:00 AM – 5:00 PM)
• Thursday, June 11 (9:00 AM – 5:00 PM)