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Experience Next-Generation GaNFast Technology

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Haitong International Group Conference Call

February 28 - March 1

CEO, Gene Sheridan,
VP & GM Navitas, Charles Zha,
Sr. Director of Sales for Taiwan and Strategic Accounts,
Webber Lo, VP Corporate Marketing & Investor Relations, Stephen Oliver:

To highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. March 1st, 11:00-12:00 HKT.

GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

Click the PDF below to view the presentation.