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Experience Next-Generation GaNFast Technology

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JP Morgan Chase Silicon Carbide (SiC) & Gallium Nitride (GaN) Week

June 9 - June 10

COO/CTO and co-founder, Dan Kinzer, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas presentation begins on June 9th, 11:00am EDT.

GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.