Dan Kinzer. COO / CTO Navitas Semiconductor will present the “Next-Generation GaNFast Integration: Autonomy, Efficiency, Reliability” on November 18th, 2021 at 10:00 AM, Central Time (US and Canada).

Abstract:
Since production launch in Q1 2018, high-voltage gallium nitride (GaN) power ICs have moved into mainstream power applications. High-frequency, high-power-density system optimization poses new questions and presents new opportunities for GaN power IC designers to extend system performance advantages over GaN discretes, and legacy silicon.

Next-generation integration enables even higher efficiency, autonomy and reliability with precision sensing of system current, voltage and temperature and real-time control and protection. External monitoring components – such as large, lossy sense resistors – are eliminated, reducing system power loss, reducing complexity and reducing cost. Autonomous characteristics include current sense and protection, low-power standby, etc.

The presentation will present worked-examples covering mobile fast chargers in the range 30-300W, and including PFC options and ACF/QR examples.