Navitas Semiconductor - World's First & Fastest GaN Power IC
Navitas Semiconductor - World's First & Fastest GaN Power IC

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ECPE Hybrid Workshop 2025
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10
Wide Bandgap Power Devices and Applications (WiPDA 2025)
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The ISES Power Semiconductor Executive Summit

23rd May 2022

The ISES Power Semiconductor Executive Summit held on May 23-24, at the Omni La Costa Resort & Spa in Carlsbad will gather leaders to collaborate and discuss the latest in SiC and GaN technologies.

“We welcome Speaker, Marco Giandalia, VP IC Design – Navitas Semiconductor

His topic of discussion will be on GaN power IC: a new platform for sustainable power conversion finds applications from consumer to EV systems. The key to improved power density is increased switching frequency to minimize passive components such as transformers, EMI filters, bulk and output capacitors, etc. High switching speed topologies have been circulated for several decades but were constrained and limited by silicon’s poor switching (QGD, Trr, COSS) performance plus complexity and lack of optimized control ICs.”

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