IR

“Electrify Our World™” presentation VP Corporate Marketing & Investor Relations, Stephen Oliver to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Click the PDF below to view the presentation.

The power semiconductor market is rising thanks to emerging technologies from power devices to power management ICs. The adoption of power semiconductors is on a huge rise across the new market verticals like compact consumer electronics, 5G communication, Data Center, Automotive, especially fast growing Electric Vehicles, and more. In the wake of this big moment for the power semiconductors, CASPA, the largest Chinese American semiconductor professional association worldwide, carrying the mission to promote the technology innovations in high-tech community, plans to organize a special seminar discussing the technology trend in power semiconductors, such as wide band gap technology – GaN, SiC, emerging power semiconductor technology, and system & applications.