Navitas’ Lin Dong, will be hosting a session on “GaNFast Power ICs: Beyond Chargers” at Electronica China 2021. Since 2018, gallium nitride (GaN) power ICs have powered mass production mobile fast chargers for smartphones and laptops, delivering up to 3x more power or 3x faster charging in half the size and weight of legacy silicon chips. Now, over 25,000,000 GaNFast power ICs have been shipped to tier-1 customers including Lenovo, OPPO, Xiaomi, Anker, Vivo and many more. Now, the same high-performance combination of GaN FET, GaN driver plus control and protection is applied to higher-power systems like EV, solar microinverters and data center power supplies.

Dan Kinzer. COO / CTO Navitas Semiconductor will present the "Next-Generation GaNFast Integration: Autonomy, Efficiency, Reliability" on November 18th, 2021 at 10:00 AM, Central Time (US and Canada). Abstract: Since production launch in Q1 2018, high-voltage gallium nitride (GaN) power ICs have moved into mainstream power applications. High-frequency, high-power-density system optimization poses new questions and presents new opportunities for GaN power IC designers to extend system performance advantages over GaN discretes, and legacy silicon. Next-generation integration enables even higher efficiency, autonomy and reliability with precision sensing of system current, voltage and temperature and real-time control and protection. External monitoring components - such as large, lossy sense resistors – are eliminated, reducing system power loss, reducing complexity and reducing cost. Autonomous characteristics include current sense and protection, low-power standby, etc. The presentation will present worked-examples covering mobile fast chargers in the range 30-300W, and including PFC options and ACF/QR examples.