Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

The ISES Power Semiconductor Executive Summit held on May 23-24, at the Omni La Costa Resort & Spa in Carlsbad will gather leaders to collaborate and discuss the latest in SiC and GaN technologies. "We welcome Speaker, Marco Giandalia, VP IC Design - Navitas Semiconductor His topic of discussion will be on GaN power IC: a new platform for sustainable power conversion finds applications from consumer to EV systems. The key to improved power density is increased switching frequency to minimize passive components such as transformers, EMI filters, bulk and output capacitors, etc. High switching speed topologies have been circulated for several decades but were constrained and limited by silicon’s poor switching (QGD, Trr, COSS) performance plus complexity and lack of optimized control ICs."

Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in GaN power ICs, founded in 2014. GaNFast™ power ICs integrate GaN power with drive, control, protection and sensing to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobilityand new-energy markets. Over 150 Navitas patents are issued or pending, and over 50 million units have been shipped with zero reported GaN field failures. Sustainability is a core focus, as every GaNFast power IC shipped saves 4 kg of CO2 emissions. Navitas rang the Nasdaq opening bell and started trading as NVTS on Nasdaq on October 20th, 2021. Navitas’ CEO and co-founder, Gene Sheridan, will share his views on next-generation power semiconductors as hosted by Mesh Ventures’ Managing Partner, Edward Chyau, with additional questions from the invited audience. May 31st, 2022 at 9pm EDT / June 1st 9am Taiwan.

"Each year, Craig-Hallum hosts a multi-industry investor conference featuring over 175 public companies where our institutional clients can meet formally with corporate management. This conference will be virtual via video conferencing and consist of scheduled one-on-one, small group meetings and select company fireside chats.  Our conference reflects our ongoing commitment to identify and introduce investment opportunities to our clients. Attendance is by invitation only." June 1st, 2022. 1-on-1 meetings with Gene Sheridan, CEO and Stephen Oliver, VP Corp. Mktg & IR.

CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 6th, 10:50am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 7th, 16:10pm EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

COO/CTO and co-founder, Dan Kinzer, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas presentation begins on June 9th, 11:00am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

CEO, Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 13th, 10:00am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Online replay (until Monday 20th June 2022): Click on the following link and enter the access code: 267952, https://ige.netroadshow.com/replay/7947/navitas-semiconductor-expert-call/