CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 6th, 10:50am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 7th, 16:10pm EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

COO/CTO and co-founder, Dan Kinzer, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas presentation begins on June 9th, 11:00am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

CEO, Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 13th, 10:00am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Online replay (until Monday 20th June 2022): Click on the following link and enter the access code: 267952, https://ige.netroadshow.com/replay/7947/navitas-semiconductor-expert-call/

Join Navitas Semiconductor at the TSMC 2022 NA Technology Symposium on June 16 to discover our next-generation GaN IC technology as we continue to ‘Electrify Our World™’ in every major market segment across mobile, consumer, industrial, computing, communications, and transportation.

Matteo Uccelli, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

Entitled ‘A GaNFast Future in EV Application’, a Navitas presentation will take place in 12th China International New Energy Vehicle Forum 2022 on 7/21 16:00pm - 16:30pm and be delivered by Mr Sun Hao, the company’s senior director at its EV Design Center in Shanghai.

Navitas to highlight pure-play, next-gen power semiconductors (GaN & SiC) at Baird Newly Public Company Virtual Access Day. CEO, Gene Sheridan and CFO, Ron Shelton will address a market opportunity of over $20B/year to replace legacy silicon chips during a virtual ‘fire-side chat’, at 2:20 pm on Wednesday, August 17th