Navitas will report fourth-quarter and full-year 2021 financial results after the market close on Tuesday, February 15th, 2022. Management will host a conference call and live webcast to present the company’s financial results and answer questions from the financial analyst community at 2:00 p.m. Pacific / 5:00 p.m. Eastern that same evening.
Navitas Semiconductor to update key Asian investors on GaN technology and our partners. The Navitas NDR representatives will be Gene Sheridan, co-founder and CEO, Todd Glickman, CFO and Stephen Oliver, VP Corporate Marketing & Investor Relations. To register for the NDR events, please contact Annie Liu, China Renaissance Corporate Access, via [email protected]. Click the PDF below to view the presentation.
CEO, Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. March 1st, 1pm Eastern time. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Click the PDF below to view the presentation.
CEO, Gene Sheridan, VP & GM Navitas, Charles Zha, Sr. Director of Sales for Taiwan and Strategic Accounts, Webber Lo, VP Corporate Marketing & Investor Relations, Stephen Oliver: To highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. March 1st, 11:00-12:00 HKT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Click the PDF below to view the presentation. English: Chinese:
Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. This conference will take place on Zoom. Please use the details below: Meeting ID: 993 7588 4729 Passcode: 207960 Click the PDF below to view the presentation.
Mr. Sheridan will present in a group webcast and Q&A at 11am on March 3rd, hosted by Baird Senior Research Analyst, Tristan Gerra, with 1-on-1 investor meetings scheduled throughout the day. Click the PDF below to view the presentation.