Latest News
Navitas Debuts Revolutionary 800 V–6 V Power Delivery Board at NVIDIA GTC 2026
The breakthrough, 800 V–6 VDC-DC power delivery board eliminates traditional 48V intermediate bus converter stage while improving system efficiency, reliability, cost, and compute density. The platform is being showcased at NVIDIA GTC 2026. TORRANCE, CA – March 16th,...
Navitas Semiconductor Bolsters Leadership with Appointment of Tonya Stevens as Chief Financial Officer
Seasoned Finance Executive Brings Over 30 Years of Expertise to Lead Financial Strategy, Drive Profitable Growth and Enable Scaling and Operational Excellence as Part of the Navitas 2.0 Transformation to High Power Markets TORRANCE, Calif., Mar. 11, 2026 – Navitas...
Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology
QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage...
Navitas, EPFL to Demonstrate Novel Solid-State Transformer Solution for AI Data Center, Enabling 800 V DC Implementation
First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas’ Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers. Torrance, CA and Lausanne, Switzerland– March 4th 2026...
Navitas to Present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026
TORRANCE, Calif., Feb. 25, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley...
Navitas Semiconductor Announces Fourth Quarter and Full Year 2025 Financial Results
Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion...
Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure, and industrial electrification. TORRANCE, CA –...
Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers
Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, CA – February, 9th, 2026 — Navitas...
Navitas Semiconductor to Report Q4 and Full Year 2025 Financial Results
TORRANCE, Calif., Jan. 28, 2026 – Navitas Semiconductor, (Nasdaq: NVTS) today announced that it will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and...
Navitas to Present at the Needham Growth Conference on January 14, 2026
TORRANCE, Calif. , Jan. 7, 2026 – Navitas Semiconductor, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the 28th Annual Needham Growth...
Navitas & Cyient Partner to Accelerate GaN Adoption in India
Join Navitas and Cyient as they present on NDTV Profit discussing plans to accelerate GaN adoption in India - a move that could transform the country’s EV, data center, and power technology landscape.
Navitas Expands Global Distribution Network with Avnet
Navitas expands globally with Avnet building on its existing Avnet Silica (Europe) relationship, to support high-growth high-power markets such as AI data centers, performance computing, energy and grid infrastructure and industrial electrification TORRANCE, CA –...
Navitas, Cyient Semiconductors enter into a strategic partnership to accelerate GaN adoption in India’s AI, Mobility, Industrial, and Energy Markets
Torrance, CA and Hyderabad, India – Mon Dec 08th, 2025 — Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors and Cyient Semiconductors Private...
Navitas Announces 3300V and 2300V UHV Silicon Carbide Product Portfolio, Augmenting Reliability and Performance in Mission-Critical Energy Infrastructure Applications
New 3300V and 2300V SiC products based on latest GeneSiC™ Trench-Assisted Planar technology and packaging innovations to augment efficiency and lifetime for AI data center, grid and energy infrastructure and industrial electrification including energy storage,...
Navitas Consolidates Asian Distribution, Signs Strategic Distribution Partnership with WT
TORRANCE, CA – November 27th, 2025 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) and the Asian distribution giant WT Microelectronics Co., Ltd. (TW: 3036) have...
GlobalFoundries and Navitas Semiconductor Partner to Accelerate U.S. GaN Technology and Manufacturing for AI Datacenters and Critical Power Applications
New technology and foundry partnership expands U.S. capacity for advanced GaN technology, design and at-scale manufacturing to support a wide range of power management applications MALTA, N.Y. and TORRANCE, C.A., November 20, 2025 – GlobalFoundries (Nasdaq: GFS) (GF)...