Latest News
Navitas GaN Power ICs at CES 2017
Meet us at CES 2017 in Las Vegas (January 5th-6th) to learn more about the world's first GaN Power ICs. Fast-forward to a next generation of power and contact [email protected].
Navitas Semiconductor CEO Keynote Presenter at Prestigious IEEE Event
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
IEEE Xplore
Front cover and technical article in IEEE's Xplore journal "Monolithic HV GaN Power ICs: Performance and Application." Article: IEEE Xplore September 2016 (requires IEEE log-in)
LTSPICE & SIMetrix – UPDATE
Models now available for 650V NV6105 (integrated GaN Power IC). File formats .asy and .cir sent as email attachments.
PCIM Shanghai Keynote
Dan Kinzer (CTO) presents opening keynote at PCIM in Shanghai "Driving For Zero Switching Loss Power Solutions." Conference Details • Presentation
PCIM Europe Keynote
Dan Kinzer (CTO) presents opening keynote at PCIM in Nuremberg "Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead." Press Release • Conference Details • Presentation
PSMA Power Technology Roadmap
Stephen Oliver (VP Marketing & Sales) presented “GaN Power ICs and the High Frequency Eco-System." Press Release • Presentation
Navitas – World’s First GaN Power ICs Leave Silicon Behind
First public announcement of AllGaN platform. Press Release • APEC keynote • IEEE TV
APEC 2016 – Select Live Demonstrations
Navitas will again host select customers in a private demonstration suite at APEC. Please contact [email protected] to book a review.
APEC 2016 – March 21st 2016, Long Beach, CA
Dan Kinzer (CTO) honored to be Plenary Speaker at APEC 2016, with presentation titled "Breaking Speed Limits with GaN Power ICs”.
Single iDrive GaN Power ICs – Samples Available
NV6105, NV6110 single iDrive GaN Power ICs available as samples. Please contact [email protected] for more information.
200kHz to 40MHz – Demonstration boards available
Please refer to Technical Library page for the listing of boost, half-bridge and Phi-2 demonstration boards featuring high performance Navitas GaN FETs.
LTSPICE, SIMetrix
Models available for 650V 130mOhm and 500mOhm GaN FETs. File formats .asy and .cir sent as email attachments.
APEC 2015 (March 15th 2015, Charlotte, NC)
Navitas revealed live demonstrations to select partners of allGaN(TM) Power ICs running at 27MHz (with air-cores), 6.78MHz (for wireless power PTU) and 500kHz (integrated half-bridge). To find out more, please contact us at [email protected], or Contact us.