Presentations: Llew Vaughan-Edmunds “Bodo's WBG - Opening Roundtable” December 2nd 4:00 PM ~ 5:30 PM CET Llew Vaughan-Edmunds “High-Power GaN ICs & FETs Enable Efficiency and Power Density Requirements in Next Gen 800V AI Data Centers” December 3rd 11:45 AM - 12:00 PM CET Sascha Dern “Performance and Reliability Gains in MVHV SiC Using Advanced Power Devices and Packaging Technologies” December 3rd 2:30 PM - 2:45 PM CET
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Bodo's WBG Event brings together innovators and industry experts from around the world to discuss the potential of wide bandgap power semiconductors. This conference serves as a pivotal platform for knowledge exchange, collaboration, and discovery in this rapidly evolving field. Click the PDFs below to view the presentations: GaN & SiC Technologies Enable Next-Gen AI Data Centers Driving Electric Motors with GaN Power ICs Bi-Directional GaNFast™ Switches Open Doors for New High-Performance Topologies
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Bodo's Wide Bandgap is bringing together innovators and industry experts from around the world to discuss the potential of wide bandgap power semiconductors. This conference serves as a pivotal platform for knowledge exchange, collaboration, and discovery in this rapidly evolving field. Presenters: Alfred Hesener, GaN Power IC Innovations For High-Frequency, High-Power Industrial Motor Drive 09:00 CET Ranbir Singh, High-speed Gen-3F GeneSiC Delivers Best-in-Class Efficiency from 300 – 800 kHz 10:15 CET
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