Events

electronica India is South Asia's leading trade fair for electronic components, systems, applications and solutions. Find Navitas Semiconductor at the JPE Booth EE 15, Hall No.5, where Nicola Franco will be presenting: "Discover leading-edge GaNFastTM ICs and GeneSiCTM FET from 650 V to 6,500 V and revolutionize your power designs, from 30 W mobile ultra-fast chargers to 6.6 kW bi-directional EV OBCs."

“Navitas Semiconductor at ICSCRM 2023”: Paper: “New Generation SiC MPS Diodes with Low Schottky Barrier Height” Aditi Agarwal, Siddarth Sundaresan, Jaehoon Park, Vamsi Mulpuri, Kailun Zhong Monday, September 18th, 19:10 Introducing the latest 650V SiC MPS diodes, featuring an ultra-low Schottky barrier height while maintaining extremely low reverse-leakage currents, high avalanche-robustness, and impressive surge currents. The performance metrics of these diodes are compared with other commercial 650V diode parts. Paper: “650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS(ON) of 1.92 mΩ-cm²” Jaehoon Park, Siddarth Sundaresan, Aditi Agarwal, Vamsi Mulpuri, Nathaniel Walsh and Steven Smith Monday, September 18th, 19:40 The paper delves into the development of a new generation of SiC planar-gate power MOSFETs, designed to offer remarkably tight VTH distribution and low RDS(on). These advancements are critical for SiC power modules in electric vehicle traction applications, ensuring consistent and efficient performance. Navitas’ Senior Vice President of SiC Technology & Operations, Sid Sundaresan, will chair session “Devices 4: Short circuit, avalanche and reliability,” with focus on crucial topics in the field of SiC technology (Thursday, September 21st, from 11:00 to 12:30). Navitas Semiconductor invites all attendees to view the presentations and engage in discussions with their experts. […]

For its third edition, Electronics Asia Conference (EAC) will put the spotlight on trends and technology innovations that are driving the latest developments and new applications in sectors including Internet of Things (IoT), Artifcial Intelligence (AI), Embedded Systems, Industrial Automation, Smart Manufacturing, Supply Chain, and Wireless industries. Track 1: Internet of Things (IoT), Artifcial Intelligence (AI) and Embedded Systems (17th) Track 2: Industrial Automation, Smart Manufacturing, and Supply Chain (18th) Track 3: Automotive Electronics and EVs, and Wireless/RF (19th) Stephen Oliver, VP Corporate Marketing & Investor Relations to present on: Accelerating Revolutions in GaN & SiC Oct 18th, (UTC +8) 09:55am - 10:15am

The Power Semiconductor User Forum, which Markt&Technik and Design & Elektronik are organizing on November 22nd and 23rd, 2023, is intended to provide orientation for developers and technical buyers in the field of power electronics. The conference conveys important basics and application tips for MOSFET & Co. Is a superjunction MOSFET sufficient for the desired application, or does it make more sense to switch to GaN or SiC transistors? Will the selected driver IC also work with other power semiconductor technologies? What deviations from the information in the data sheet can be expected? Which factors are decisive for a qualified pre-selection and which other questions to the manufacturer facilitate the decision-making and procurement? Alfred Hesener to present on: "Reliability and Cost-of-ownership Optimization in Industrial Power Supplies" November 23rd - 1:45pm - 2:15pm CEST Click the PDF below to view the presentation.

Bodo's Wide Bandgap is bringing together innovators and industry experts from around the world to discuss the potential of wide bandgap power semiconductors. This conference serves as a pivotal platform for knowledge exchange, collaboration, and discovery in this rapidly evolving field. Presenters: Alfred Hesener, GaN Power IC Innovations For High-Frequency, High-Power Industrial Motor Drive 09:00 CET Ranbir Singh, High-speed Gen-3F GeneSiC Delivers Best-in-Class Efficiency from 300 – 800 kHz 10:15 CET

The XXII International Workshop on the Physics of Semiconductor Devices (IWPSD 2023) is being jointly organized by the Indian Institute of Technology Madras in collaboration with Society for Semiconductor Devices and Semiconductor Society (India). This series of biennial workshops, started in 1981, provides a global forum for interaction between scientists and technologists working in the area of semiconductor materials and devices. Invited talk: "Impact of Wide bandgap devices on automotive electrification", presented by Dr. Ranbir Singh.

"After years of hard work, 21Dianyuan is determined to forge ahead and start a new chapter, inviting dozens of domestic and foreign senior experts to create the 14th "Asian Power Technology Development Forum" that is ahead of its time. More than 40 senior experts provided technical guidance, and more than 100 corporate meetings demonstrated the corporate image and its new technologies and products on-site. More than 3,000 engineers enthusiastically participated, covering the Pearl River Delta, Jiangsu, Zhejiang, and Shanghai and other regions across the country. December 23, 2023 On the 21st, Dianyuan's 14th "Asian Power Technology Development Forum" was upgraded again, creating four conference venues. This event covers semiconductor chips, power devices, passive components, test measurement, testing and certification and other technical directions involving low power, high Power, consumer electronics, automotive, industrial, 5G, photovoltaic energy storage and other product application fields. Provide domestic power engineers with a high-quality and efficient platform that integrates technology improvement, network expansion, business negotiation and industry empowerment."