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Bodo’s Power Systems: Fully-Protected Half-Bridge Power ICs Enable Motor-Integrated Inverters
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
Navitas Delivers Pure-Play, Next-Gen Technology Keynote at Flagship IEEE Power Semiconductor Workshop
GaNFast™ and GeneSiC™ technologies deliver faster charging, energy savings, and lower system costs than legacy silicon chips Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in gallium nitride (GaN) power ICs and...
Navitas Showcases Pure-Play Next-Gen Power Semis at Prestigious Chinese Electronics Conference
Industry-leading GaN and SiC technologies for $22B market presented in keynote, industrial papers and exhibition booth Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors...
PSD: GaN Drives Development of Next-Generation EVs
"The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...
Navitas’ EVP Ranbir Singh, Silicon Carbide Pioneer, Inducted into Engineering Hall of Fame
Founder of GeneSiC Semiconductor receives prestigious honor from NCSU, home of US SiC Research El Segundo, CA – October 24th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, announced that Dr. Ranbir Singh,...
Navitas Showcases Pure-Play, Next-Gen Power Semiconductors at Electronica 2022
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies drive a $22B/year market opportunity at the world’s leading electronics trade fair El Segundo, CA – October 18th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
Compound Semiconductor: A GaN device for all markets
“GaN power device maker, Navitas, believes its latest half-bridge power IC will deliver the high powers and efficiencies that mobile phone chargers, electric vehicles, photovoltaics and data centres need”. “IN EARLY September this year, California-based GaN power...
GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...
EE Times Green Engineering Summit: GaN Power ICs Lead the Way to Sustainability
“The EE Times Green Engineering Summit was held September 13-15. The goal of this summit was an exchange of ideas by various companies on their approach towards a more sustainable, lower carbon footprint future from the generation and storage of renewable energy,...
Navitas Recognized as Industry-Leading Sustainability Company
“Electrify Our World™” mission recognized in ESG Investing’s ‘Best Sustainability’ and ‘Best Climate-Related’ categories El Segundo, CA – October 3rd, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power...
Navitas Showcases Pure-Play WBG Solutions for EV at ECCE 2022
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies deliver energy savings, faster charging, extended range, and lower system costs El Segundo, CA – September 29th, 2022— As US auto sales are forecasted to be majority EV by 2030, Navitas Semiconductor...
WEKA FACHMEDIEN Interviews Navitas Semiconductor
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
Navitas and JP Electronic Devices Showcase GaN and SiC Solutions for Efficient, Sustainable Design at electronica India
Demos include a wide range of ultra-fast GaN chargers, a new family of GaN half-bridge ICs, and high-performance, rugged SiC MOSFETs El Segundo, CA – September 20th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
Article: GaN Half-Bridge Integration Accelerates the Power-Electronics Revolution
Five years into the second revolution in power semiconductors, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is...
Navitas GaNSense™ Half-Bridge Power ICs: The Next Stage in the High-frequency Power Electronics Revolution
El Segundo, CA – September 7th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs, today announced the industry’s first GaNSense™ half-bridge power ICs. These...
Navitas, the Pure-play, Next-Gen Power Semiconductor Leader Announces New York Investor Meeting
In-person meeting to review recent accretive GeneSiC Semi acquisition, with detailed device, system and market review, plus hands-on demonstrations of GaN and SiC power technology El Segundo, CA – August 31st, 2022: Navitas Semiconductor (Nasdaq: NVTS), the pure-play,...