Latest News
Navitas Announces GaN Power IC Experts to Present at Major Power Electronics Event
EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe, in Nuremberg, Germany, May 16th -18th, 2017.
Navitas GaN Power ICs Driving US Technology Roadmap
Navitas at the leading edge of "U.S. Power Electronics Technology and Manufacturing Roadmap", by PEIC, submitted to National Institute of Science and Technology (NIST). Part of a 2-year project entitled “Strengthening the Domestic Power Electronics Ecosystem,” funded...
GaN Power-kHz, MHz or GHz?
Navitas CEO champions high-frequency roadmap for GaN Power ICs at APEC rap session on Mar 27th.
Navitas 将在 2017 年 APEC 公布重要的氮化镓 (GaN) 功率 IC 消息
[vc_row][vc_column][vc_column_text] English Translation: Navitas Announces Significant GaN Power IC Coverage at APEC 2017 业界首创氮化镓 (GaN) 功率 IC 在高密度, 高效率转换器方面树立了新标准 EL SEGUNDO, Calif.--(PRWeb) Navitas （音译:纳微） 半导体公司今天宣布，公司将在 2017 年 3 月 26 日至30日佛罗里达州坦帕市举行的应用功率电子会议和展览会...
Navitas Announces Significant GaN Power IC Coverage at APEC 2017
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas将在2017年APEC公布重要的氮化镓(GaN)功率IC消息 Industry-first GaN Power ICs set a new standard in high-density, high-efficiency converters. EL SEGUNDO, Calif.--(PRWeb)--Navitas Semiconductor announced today that the...
Navitas 推出业界首个集成半桥氮化镓 (GaN) 功率 IC
加利福尼亚州埃尔塞贡多EL SEGUNDO, Calif.–(PRWeb)—Navitas (音译:纳薇)半导体今天宣布重大技术突破，推出业界首个集成半桥氮化镓(GaN)功率IC。半桥电路是电力电子行业的重要基础，可以广泛应用到智能手机和笔记本充电器，电视，太阳能电池板，数据中心和电动汽车。
Navitas Produces World’s First Integrated Half-Bridge GaN Power IC
EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor today announced a major technology breakthrough with the introduction of the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC.
Navitas & World’s first GaN Power ICs at MWC 2017
Navitas AllGaN enables 2x faster charging with the 45W USB-PD Type C mobile adapter. Mobile World Congress is the world’s largest gathering for the mobile industry, organised by the GSMA and held in the Mobile World Capital Barcelona, 27 February - 2 March 2017. Join...
Navitas Semiconductor Delivers the World’s First GaN Power ICs
EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN™ technology.
Navitas Semiconductor – World’s First GaN Power IC – Yole Développement
A new report confirms Navitas AllGaN™ as the leading technology to challenge $15B power silicon market. For power electronics applications, wide bandgap (WBG)-based technologies (particularly silicon carbide (SiC) and…
Navitas GaN Power ICs at CES 2017
Meet us at CES 2017 in Las Vegas (January 5th-6th) to learn more about the world's first GaN Power ICs. Fast-forward to a next generation of power and contact [email protected].
Navitas Semiconductor CEO Keynote Presenter at Prestigious IEEE Event
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
IEEE Xplore
Front cover and technical article in IEEE's Xplore journal "Monolithic HV GaN Power ICs: Performance and Application." Article: IEEE Xplore September 2016 (requires IEEE log-in)
LTSPICE & SIMetrix – UPDATE
Models now available for 650V NV6105 (integrated GaN Power IC). File formats .asy and .cir sent as email attachments.
PCIM Shanghai Keynote
Dan Kinzer (CTO) presents opening keynote at PCIM in Shanghai "Driving For Zero Switching Loss Power Solutions." Conference Details • Presentation
PCIM Europe Keynote
Dan Kinzer (CTO) presents opening keynote at PCIM in Nuremberg "Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead." Press Release • Conference Details • Presentation